Theoretical and experimental study has been made for the process of hard-des-truction produced by a laser acting upon the surface of charge-coupled devices (CCD) having the MOS structere. It is suggested that the thermal action of laser and the mechanical action of laser plasma shock wave are the main causes for destruction of the structure of the CCD. Optical breakdown threshold, visible damage threshold, thermal melting threshold of semiconductor materials of the CCD device by YAG laser and laser energy threshold caused the whole device to faiture are obtained.