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物理学报. 1994, 43(11): 1795-1802.
doi: 10.7498/aps.43.1795.
激光对电荷耦合器件硬破坏机理研究
- 收稿日期: 1993-09-08
- 刊出日期: 1994-11-20
摘要: 就激光对组成ＭＯＳ结构电荷耦合器件材料和整个器件的产生硬破坏的过程进行了理论和实验研究。提出激光的热作用和等离子体冲击波的机械作用是导致电荷耦合器件结构被破坏的主要原因。得到了ＹＡＧ激光致使组成电荷耦合器件的半导体材料的光学击穿阈值、视见损伤阈值、热熔融阈值和致使整个器件失效的激光功率阈值等有关结果。
English Abstract
STUDY OF HARD-DESTRUCTIVE MECHANISM OF THE CHARGE-COUPLED DEVICES BY A LASER
- Received Date:
08 September 1993
- Published Online:
20 November 1994
Abstract: Theoretical and experimental study has been made for the process of hard-des-truction produced by a laser acting upon the surface of charge-coupled devices (CCD) having the MOS structere. It is suggested that the thermal action of laser and the mechanical action of laser plasma shock wave are the main causes for destruction of the structure of the CCD. Optical breakdown threshold, visible damage threshold, thermal melting threshold of semiconductor materials of the CCD device by YAG laser and laser energy threshold caused the whole device to faiture are obtained.
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