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物理学报. 1998, 47(6): 1041-1046.
doi: 10.7498/aps.47.1041.
K/GaAs(100)表面的氮化
- 收稿日期: 1997-08-04
- 修回日期: 1997-09-15
- 刊出日期: 1998-03-05
摘要: K吸附层的存在能促进GaAs(100)表面在室温下的氮化.光电发射测量为此提供了证据.在将K/GaAs(100)暴露于纯氮以后，价带和芯能级谱均会出现显著变化：功函数有一定程度回升，价带谱中显露N2p峰，Ga2p和As2p芯能级谱中产生化学位移分量.就所研究的三种不同的K覆盖度(1/4，1/2和1ML)而言，1ML的那种显示了最强的促进作用.
English Abstract
NITRIDATION OF K/GaAs(100) SURFACES
- Received Date:
04 August 1997
- Accepted Date:
15 September 1997
- Published Online:
05 March 1998
Abstract: Presence of a K adlayer will promote nitridation of GaAs(100) surfaces at room temperature, as is evidenced by photoemission measurements. Following exposure of K/GaAs to pure nitrogen, there appear remarkable variations in both valence band and core level spectra, i.e., recovery of work function to a certain extent, emergence of the N2p peak in the valence band spectra and creation of chemically shifted Ga2p and As2p components in the core level spectra. For the three different K coverages we studied (1/4, 1/2 and 1ML), the 1ML one shows the strongest promotion effect.
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