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物理学报. 2000, 49(8): 1453-1456.
doi: 10.7498/aps.49.1453.
二维纳米点阵列的Monte-Carlo模拟
- 收稿日期: 1999-10-27
- 修回日期: 2000-02-20
- 刊出日期: 2000-04-05
摘要: 介绍了一种利用标准单电子隧穿理论与Monte-Carlo 方法模拟二维量子点阵列的程序.数值计算结果表明，二维量子点阵在低温下有库仑充电行为，其量子功能作用使它显示出可喜的研究价值和应用前景.
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关键词:
- Monte-Carlo 模拟 /
- 单电子 /
- 量子点阵
English Abstract
MONTE-CARLO SIMULATION OF TWO DIMENSIONAL ARRAYS
- Received Date:
27 October 1999
- Accepted Date:
20 February 2000
- Published Online:
05 April 2000
Abstract: In this paper, a single-charge tunneling simulator, the Monte Carlo simulator of two-dimensional quantum dot array using standard single electron tunneling theory and Monte-Carlo method is introduced. The simulated results show that the two-dimensional quantum dot array has Coulomb charging effect at low temperatures. The quantum effect of the dot array exhibits great prospect in research and applications.
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Keywords:
- Monte-Carlo simulation /
- single electron /
- quantum dot array
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