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摘要: 分别以硅-二氧化硅和锗-二氧化硅复合靶作为溅射靶,采用磁控溅射技术在p型硅衬底上淀积了含纳米硅的氧化硅薄膜和含纳米锗的氧化硅薄膜.各样品分别在氮气氛中经过300至1100℃不同温度的退火处理.使用高分辨透射电子显微镜可以观察到经900和1100℃退火的含纳米硅的氧化硅薄膜中的纳米硅粒,和经900和1100℃退火的含纳米锗的氧化硅薄膜中的纳米锗粒.经过不同温度退火处理的含纳米硅的氧化硅和含纳米锗的氧化硅薄膜的光致发光谱均具有相似的峰型,且它们的发光峰位均位于580nm(2.1eV)附近.可以认为含纳米硅的氧化硅和含纳米锗的氧化硅薄膜的光发射主要来自于SiO2层中发光中心上的复合发光,对实验结果进行了合理的解释
Abstract: Si-containing silicon oxide (SSO) films and Ge-containing silicon oxide (GSO) films were deposited on p-type Si substrates using the RF magnetron sputtering technique with a Si-SiO2 and a Ge-SiO2 composite target, respectively. These films were annealed in a N2 ambient at temperatures from 300 to 1100℃. Using high resolution transmission electron microscopy,nanometer Si particles and nanometer Ge particles were observed in the SSO and GSO films,respectively,after annealing at 900 or 1100℃. All the PL spectra from the two types of films annealed at various temperatures have similar shapes with peak positions around 580nm (～2.1eV). It is indicated that light emission originates from luminescence centers in Si oxide films. The experimental results have been explained reasonably.
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