| 引用本文: |
|
| Citation: |
|
摘要: 对不同的本底真空条件下,采用甚高频等离子体增强化学气相沉积技术沉积的氢化微晶硅（μc_Si∶H）薄膜中的氧污染问题进行了比较研究.对不同氧污染条件下制备的薄膜样品的x射线光电子能谱与傅里叶变换红外吸收光谱测量结果表明：μc_Si∶H薄膜中,氧以Si—O，O—O和O—H三种不同的键合模式存在,不同的键合模式源自不同的物理机理.μc_Si∶H薄膜的Raman光谱、电导率与激活能的测量结果进一步显示：沉积过程中氧污染程度的不同,对μc_Si∶H薄膜的结构特性与电学特性产生显著影响；而不同氧污染对μc_Si∶H薄膜电学特性的影响不同于氢化非晶硅（a_Si:H）薄膜.
Abstract: Investigations on the oxygen contamination in the μc_Si∶H thin films deposited by very_high_frequency plasma_enhanced chemical_vapor deposition(VHF_PECVD) technique with and without load lock chamber have been reported in this paper. From the results of x_ray photoelectron spectroscopy and Fourier transform infrared absorption measurements, it can be identified that oxygen exists in μc_Si∶H film with different bonding modes, namely Si—O bonding, O—H bonding and O—O b onding. In addition, the influences of oxygen on the structural and electrical p roperties of the films are studied with Raman spectra, conductivity(σ) and acti vation energy (Ea) measurements. The results reveal that structural propertie s of the μc_Si∶H film depend strongly on the bonding modes of the existing oxy gen. The electrical properties show that the role of oxygen in μc_Si∶H films i s different from those in a_Si∶H and the essential mechanism needs to be furthe r explored.
下载:
