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物理学报. 2004, 53(7): 2150-2153.
doi: 10.7498/aps.53.2150.
大光腔小垂直发散角InGaAs/GaAs/AlGaAs半导体激光器
- 收稿日期: 2003-08-21
- 修回日期: 2003-10-14
- 刊出日期: 2004-07-15
English Abstract
Large optical cavity and small vertical divergence angle semiconductor lasers
- Received Date:
21 August 2003
- Accepted Date:
14 October 2003
- Published Online:
15 July 2004
Abstract: A novel coupled large optical cavity cascaded by tunnel-junction semiconductor lasers is put forward to resolve the major difficulties of ordinary laser diodes. In this structure several active regions are cascaded by tunnel junctions to couple a large optical cavity. This structure can solve the problem of catastrophic optical damage of facet and large vertical divergence caused by thin emitting area in ordinary laser diodes. The near-field facalur size reaches 1μm. Low-pressure metal-organic chemical vapor deposition is adopted to grow the novel semiconductor lasers. Slope efficiency as high as 0.80W/A per facet and vertical divergence angle of 20°and threshold current density of 277 A/cm2 are achieved from an uncoated novel laser device.
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