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中国物理学会期刊

浮栅ROM集成电路空间低剂量率辐射失效时间预估

CSTR: 32037.14.aps.53.3125

Prediction of failure time for floating gate ROM devices at low dose rate in space radiation environment

CSTR: 32037.14.aps.53.3125
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  • 利用60Coγ射线开展了浮栅ROM集成电路(AT29C256)总剂量辐照实验, 研究了集成 电路功耗电流和出错数在不同剂量率下的辐射响应;按照定义的失效标准和外推实验技术, 探索了集成电路参数失效与功能失效时间随辐射剂量率的变化关系;根据失效时间与辐射剂 量率的函数关系,预估了浮栅ROM集成电路AT29C256(9911)和AT29C256(9939)空间低剂量率辐射失效时间.

     

    The experiments of ionizing radiation were performed on floating gate ROM device s by using 60Coγrays. The experimental aim was to examine the radi ation response at various dose rates. According to the extrapolation technique and the failu re criteria we defined,the parameter failure and function failure of devices vs. dose rate were studied. Finally, based on the function of failure timevs. doserate, the failure time of floating gate ROM device in space radiation environm ent was predicted.

     

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