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中国物理学会期刊

ZnCdSe量子阱/CdSe量子点耦合结构中的激子隧穿过程

CSTR: 32037.14.aps.53.3211

Exciton tunnelling in ZnCdSe quantum well/CdSe quantum dots

CSTR: 32037.14.aps.53.3211
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  • 用室温光致发光谱和飞秒脉冲抽运探测方法对不同垒宽的ZnCdSe量子阱/ZnSe/CdSe 量子点新型耦合结构中激子隧穿过程进行研究,观察到激子从量子阱到量子点的快速隧穿过 程.在ZnSe垒宽为10nm, 15nm, 20nm时,测得激子隧穿时间分别为1.8ps, 4.4ps, 39ps.

     

    Exciton tunneling through ZnSe barrier layer of various thicknesses is invest igated in a novel Zn072Cd028Se/CdSe coupled quantum well/quantum dots (QW/QDs) structure using photoluminescence spectra and nearresonant pumpprobe mea surements. Fast exciton tunneling from quantum well to quantum dots is observed by transient differential transmission. The tunneling time is 18ps, 44ps, 39 ps for barrier thickness of 10nm, 15nm, 20nm, respectively.

     

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