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中国物理学会期刊

甚高频等离子体增强化学气相沉积制备微晶硅太阳电池的研究

CSTR: 32037.14.aps.54.1899

Study of microcrystalline silicon solar cells fabricated by very high frequency plasma-enhanced chemical vapor deposition

CSTR: 32037.14.aps.54.1899
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  • 采用甚高频等离子体增强化学气相沉积技术成功地制备了不同硅烷浓度和辉光功率条件下的微晶硅电池.电池的J-V测试结果表明:在实验的硅烷浓度和功率范围内,随硅烷浓度的降低和功率的加大,对应电池的开路电压逐渐变小;硅烷浓度的不同对电池的短路电流密 度有很大的影响,但功率的影响在实验研究的范围内不是很显著.对于微晶硅电池,N层最好 是非晶硅,这是因为一方面可以降低对电流的横向收集效应,另一方面也降低了电池的漏电概率,提高了电池的填充因子.

     

    Microcrystalline silicon solar cells with the variation of silane concentration (SC) and discharge power were fabricated by very high frequency plasma_enhanced chemical vapor deposition. The results of J_V measurements showed that open circuit voltage (Vococ) of solar cells decreases with the decr ease of silane concentration and the increase of power in the range of experiments. I nfluence of SC on short_circuit current density (Jscsc) is more evi dent than power. As for microcrystalline silicon solar cells, the optimum choice for N layer is amorphous, because it can decrease the lateral collection effect of current on the one hand and increase the fill factor on the other hand.

     

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