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物理学报. 2005, 54(5): 2247-2251.
doi: 10.7498/aps.54.2247.
Si调制掺杂AlGaN/GaN异质结磁阻拍频现象
- 收稿日期: 2004-07-12
- 修回日期: 2004-08-23
- 刊出日期: 2005-05-10
摘要: 在低温（15K—25K）和强磁场（0—10T）条件下，对二维电子气占据两个子带的Si调制掺杂AlGaN/GaN异质结构进行磁输运测量.在一定温度范围内观察到磁阻拍频现象.根据Sander等人和Raikh等人给出的磁阻振荡的具体表达式，拟合实验结果表明磁阻拍频是由第一子带S dH振荡和磁致子带间散射引起的磁阻振荡导致的.
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关键词:
- AlGaN/GaN异质结构 /
- SdH振荡 /
- 磁致子带间散射 /
- 磁阻拍频
English Abstract
Beating patterns in the oscillatory magnetoresistance of a Si modulation-doped AlGaN/GaN heterostructure
- Received Date:
12 July 2004
- Accepted Date:
23 August 2004
- Published Online:
10 May 2005
Abstract: Magneto-transport measurements have been carried out on a Si modulation-doped Al 022Ga078N/GaN heterostructure in a temperature range between 1 5 and 25 K under magnetic field up to 10T. Striking beating patterns in magnetor esistance vs magnetic field are observed in the vicinity of a specific temperatu re. Theoretical simulation is performed and the comparison between numerical sim ulations and the experimental data reveals that the beating patterns are due to the interference of the magneto-intersubband scattering and the SdH oscillator o f first subband.
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