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物理学报. 2005, 54(5): 2338-2341.
doi: 10.7498/aps.54.2338.
自旋阀中的各向异性磁电阻效应
- 收稿日期: 2004-07-21
- 修回日期: 2004-10-12
- 刊出日期: 2005-05-10
English Abstract
Anisotropic magnetoresistance effect in spin valve multilayers
- Received Date:
21 July 2004
- Accepted Date:
12 October 2004
- Published Online:
10 May 2005
Abstract: Planar Hall effect(PHE) in Ta(8nm)/NiFe(7nm)/Cu(2.4nm)/NiFe(4.4nm)/FeMn(14nm)/Ta(6nm) spin valve multilayer have been measured in magnetic fields rotating in the film plane. A “mixed” effect of the free and pinned layers on anisotropic magnetoresistance (AMR) has been obtserved. The result shows that the PHE can give more information about the magnetic configurations of the spin valve multilayers than the usual MR measurements.
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Keywords:
- spin valve /
- AMR /
- planar Hall effect
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