| 引用本文: |
|
| Citation: |
|
计量
- 文章访问数: 3432
- PDF下载量: 812
- 被引次数: 0
物理学报. 2005, 54(8): 3810-3814.
doi: 10.7498/aps.54.3810.
界面电偶极子对GaN/AlGaN/GaN光电探测器紫外/太阳光选择比的影响
- 收稿日期: 2004-12-16
- 修回日期: 2005-03-14
- 刊出日期: 2005-04-05
English Abstract
Influence of interface dipoles on the UV/solar rejection ratios of GaN/AlGaN/GaN photodetectors
- Received Date:
16 December 2004
- Accepted Date:
14 March 2005
- Published Online:
05 April 2005
Abstract: In the inverted heterostructure photodiodes(IHPs), the strong polarization effect at the interface of the AlGaN/GaN heterostructure influences UV/Solar rejection ratios of this type of structure. In this paper, the total effect of polarization is divided into two parts: the polarization and dipole terms. Based on the model of GaN/AlGaN/GaN IHPs, the influence of dipoles on the UV/Solar rejection ratios is analyzed. The results show that when dipoles are considered, UV/Solar rejection ratios of photodetectors are about three orders of magnitude, which agree with the experiment of Tarsa. The influence of dipoles should be considered in the IHPs.
下载:
