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物理学报. 2006, 55(6): 2936-2940.
doi: 10.7498/aps.55.2936.
用SCLC法研究低k多孔SiO2:F薄膜的隙态密度
- 收稿日期: 2005-11-28
- 修回日期: 2005-12-09
- 刊出日期: 2006-03-05
English Abstract
Density of defect states in low-k porous SiO2:F film researched by SCLC method
- Received Date:
28 November 2005
- Accepted Date:
09 December 2005
- Published Online:
05 March 2006
Abstract: The porous fluorine doped silica (SiO2:F) films were prepared by sol-gel method. The densities of the states (DOS) of the SiO2:F films and the effect of the dose of the F dopant were studied by space charge limited current(SCLC) techniques. Distribution of defect states N(E) in the vicinity of Fermi level in SiO2:F films was determined to be about 7×1015cm-3·eV-1. The dangling bounds on the surface of the porous film were the primary cause of the DOS.
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Keywords:
- density of states /
- SCLC /
- porous SiO2:F /
- low k
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