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物理学报. 2007, 56(3): 1785-1789.
doi: 10.7498/aps.56.1785.
As保护下的生长中断时间对AlSb/InAs超晶格界面粗糙度的影响
- 收稿日期: 2006-04-26
- 修回日期: 2006-09-16
- 刊出日期: 2007-07-11
English Abstract
As-soak dependence of interface roughness of AlSb/InAs superlattice
- Received Date:
26 April 2006
- Accepted Date:
16 September 2006
- Published Online:
11 July 2007
Abstract: Different As-soak time is applied during InSb-like interfaces growth of InAs/AlSb superlattices on GaAs(100) substrates. The interface roughness is studied by grazing incidence X-ray reflectivity. The reflectivity curves are simulated by standard software and the rms roughness of the interfaces is obtained. It was hown that the sample with As-soak time of 20 seconds has the most smooth interfaces. By analyzing the microscope images of the samples, we suggest that In-rich interfaces will be formed with too short As-soak time and AlAs-like interfaces are obtained with too long As-soak time, and in hoth cases the interface will be cearsened. Grazing incidence X-ray reflectivity is also recommended as a powerful tool for assessing the structure of superlattices.
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