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物理学报. 2008, 57(6): 3853-3856.
doi: 10.7498/aps.57.3853.
InGaN薄膜中电子自旋偏振弛豫的时间分辨吸收光谱研究
- 收稿日期: 2007-07-30
- 修回日期: 2007-11-14
- 刊出日期: 2008-03-05
English Abstract
Study of injection and relaxation of electron spins in InGaN film by time-resolved absorption spectroscopy
- Received Date:
30 July 2007
- Accepted Date:
14 November 2007
- Published Online:
05 March 2008
Abstract: The injection and relaxation of electron spins in In0.1Ga0.9N film were studied by femtosecond time-resolved circularly polarized pump-probe spectroscopy. An initial degree of spin polarization of 02 was obtained, which agrees with 3∶1 ratio of heavy- to light-hole valence bands in transition strength, but not with the 1∶1 or 1∶0.94 ratios. A spin relaxation lifetime of 490±70ps was obtained at room temperature. The spin relaxation mechanism is discussed qualitatively, and is thought to be dominated by BAP mechanism here.
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Keywords:
- electron spin /
- InGaN /
- spin polarization /
- spin relaxation
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