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中国物理学会期刊

Tm:Y2SiO5晶体的生长和光谱性质研究

CSTR: 32037.14.aps.57.5007

Growth and spectral properties of Tm:Y2SiO5 single crystal

CSTR: 32037.14.aps.57.5007
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  • 采用中频感应提拉法生长了高质量的Tm:Y2SiO5(Tm:YSO)晶体,测定了晶体的晶格常数和分凝系数.运用劳厄照相法确定了单斜晶系Tm:YSO晶体的三个偏振轴〈010〉,D1和D2,在室温下测量了三个偏振轴方向的吸收光谱、荧光光谱和荧光寿命,计算了晶体吸收峰的吸收线宽和吸收截面.研究发现,相对于其他两个偏振轴方向,D1方向在790nm处出现较强的吸收峰,

     

    High-quality Tm:Y2SiO5 (Tm:YSO) single crystal was grown by the Czochralski method. The lattice parameter and separation coefficient of the crystal were measured. The three polarization axis: 〈010〉, D1 and D2 of this monoclinic single crystal were determined by Laue method. Absorption spectra, fluorescence spectra and fluorescent lifetime of this single crystal were measured along the three polarization axes. Its absorption line width and absorption cross section were also calculated. A stronger absorption peak at 790nm and a fluorescence peak with enhanced emission at 2μm were observed along the D1 polarization axis compared with other two axes. Besides, this crystal exhibits bigger absorption cross section and longer fluorescence lifetime along D1 polarization axis. Therefore, Tm:YSO single crystal is suitable for AlGaAs diode-pumped laser and it possesses great potentiality in the application of 2μm solid-state laser.

     

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