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中国物理学会期刊

非晶SnO2:(Cu,In)薄膜的荧光特性及带尾态

CSTR: 32037.14.aps.57.5823

Photoluminescence and tail states of amorphous SnO2:(Cu,In) film

CSTR: 32037.14.aps.57.5823
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  • 用反应蒸发法在玻璃等衬底上制备出铜和铟掺杂的氧化锡SnO2:(Cu,In)薄膜.对制备薄膜的发光性质做了研究,制备样品为非晶态,具无定形结构.测量了薄膜在220—1100nm范围的透过率,得到的带隙宽度Eoptg=4.645eV.室温条件下对样品进行光致发光测量,得到了显著的紫外(276—550nm)蓝绿光连续谱,通过发光谱的研究给出了这种材料的隙态分布.

     

    The SnO2:(Cu,In) thin films are deposited on glass substrates by reaction evaporation. The photoluminecence(PL) of the films is researched. The films have amorphous structure. The transmittance is measured in the range 220—1100nm. The width of optical band gap is Eoptg=4.645eV. At room temperature,the photoluminescence is measured at different wavelengths,and continuous spectrum of photoluminescence is obtained in the range of 276—550nm. Especially,the density distributing in band tail states is determined by analyzing the emission spectrum.

     

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