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物理学报. 2008, 57(11): 7228-7232.
doi: 10.7498/aps.57.7228.
应变Si价带色散关系模型
- 收稿日期: 2008-03-08
- 修回日期: 2008-06-04
- 刊出日期: 2008-11-20
English Abstract
Dispersion relation model of valence band in strained Si
- Received Date:
08 March 2008
- Accepted Date:
04 June 2008
- Published Online:
20 November 2008
Abstract: There has been much interest lately in the strained Si CMOS technology used for carrier mobility enhancement. The dispersion relation of valence band in strained Si is the theoretical basis for understanding and enhancing hole mobility. With in the frame of K.P theory, the dispersion relation is derived by taking strained Hamiltonian perturbation into account. The corresponding model obtained can be applied to calculate the valence band structure and hole effective mass along arbitrarily K wavevector direction in strained Si grown on arbitrarily oriented relaxed Si1－xGex(0≤x≤0.6) substrates, and hence is valuable as reference for the design of devices.
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Keywords:
- strained Si /
- K.P method /
- dispersion relation
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