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中国物理学会期刊

硫系非晶半导体薄膜中的超快光 Kerr效应

CSTR: 32037.14.aps.58.1002

Ultrafast optical Kerr effect in amorphous chalcogenide films

CSTR: 32037.14.aps.58.1002
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  • 利用飞秒激光超外差光Kerr(OHD-OKE)技术研究了As2S3, As2Se3, GeS2, GeSe2, Ge20As25S55, Ge20As25Se55, Ge10As40S20 

    Amorphous chalcogenide As2S3, As2Se3, GeS2, GeSe2, Ge20As25S55, Ge20As25Se55, Ge10As40S20Se30 films were studied by femtosecond OHD-OKE. Ict was indicated that the third-order nonlinear susceptibility χ(3) was as large as 10-12 esu, and they also exhibited a very fast response time shorter than 200 fs. Their nonlinear refractive indices and absorption were also calculated from the above results. The ultrafast response and large third-order nonlinearity in amorphous chalcogenide films are attributed to the ultrafast distortion of the electron cloud of atoms.

     

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