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物理学报. 2009, 58(3): 1966-1970.
doi: 10.7498/aps.58.1966.
AlGaN/GaN槽栅HEMT模拟与实验研究
- 收稿日期: 2008-03-14
- 修回日期: 2008-09-09
- 刊出日期: 2009-03-20
English Abstract
Simulation and experimental investigation of recessed-gate AlGaN/GaN HEMT
- Received Date:
14 March 2008
- Accepted Date:
09 September 2008
- Published Online:
20 March 2009
Abstract: The effect of recessed-gate depth on device characteristics was analyzed. The device characteristics with different recessed-gate depth were simulated by using SILVACO and the variation of saturation current, maximum conductance and threshold with different recessed-gate depth were obtained. With increasing recessed-gate depth, the saturation current reduces and maximum conductance increases and the threshold shifts to positive direction of X-axis. High electron mobility transistors of AlGaN/GaN heterostructure grown on sapphire substrates with different recessed-gate depth were fabricated. The simulation of different recessed-gate depth device characteristics were validated by comparing experiments with the simulation results. The discrepancies between simulation and experiment were analyzed in the aspects of etching damage and interface states.
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