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[1] Chaudhry A,Kummer M J 2004 IEEE Trans. on Devices Mater. Rel.4 99
[2] Coling J P 1993 Sillicon-on-Insulator Technology (Boston: Kluwer Academic Publishers) p5
[3] Luan S Zh,Liu H X,Jia R X,Cai N Q 2008 Acta Phys. Sin. 57 3807 (in Chinese) [栾 苏、刘红侠、 贾仁需、蔡乃琼 2008 物理学报 57 3807]
[4] Fitzgerald E A,Lee M L,Yu B,Lee K L,Dohrman C L,Isaacson D,Langdo T A,Antoniadis D A 2005 International Electron Devices Meeting p355
[5] Sanuki T,Oishi A,Morimasa Y 2003 International Electron Devices Meeting p351
[6] Zhang Zh F,Zhang H M,Hu F Y,Xuan R X,Song J J 2009 Acta Phys. Sin. 58 4948 (in Chinese) [张志锋、张鹤鸣、胡辉勇、宣荣喜、宋建军 2009 物理学报 58 4948 ]
[7] Liu X Y,Kang J F,Sun L 2002 IEEE Electron Lett. 23 270
[8] Tezuka T,Sugiyama N 2003 IEEE Trans. on Electron Devices 50 1328
[9] Kingon A I,Maria J P,Streiffe S K 2000 Nature 406 1032
[10] Liu S,White T,2004 IEEE Trans. on Nuclear Science 51 3475
[11] Wu W,Li X,Gildenblat G,Workman G Veeraraghavan S,McAndrew C,Langevelde R V,Smit G D J,Scholten A J,Klaassen D B M,Watts J 2009 Solid-State Electron. 53 18
[12] Young K K 1989 IEEE Trans. on Electron Devices 36 399
[13] Venkataraman V,Nawal S,Kummer M J 2007 IEEE Trans. on Electron Devices 54 554
[14] Kummer M J,Venkataraman V,Nawal S 2006 IEEE Trans. on Electron Devices 53 364
-
[1] Chaudhry A,Kummer M J 2004 IEEE Trans. on Devices Mater. Rel.4 99
[2] Coling J P 1993 Sillicon-on-Insulator Technology (Boston: Kluwer Academic Publishers) p5
[3] Luan S Zh,Liu H X,Jia R X,Cai N Q 2008 Acta Phys. Sin. 57 3807 (in Chinese) [栾 苏、刘红侠、 贾仁需、蔡乃琼 2008 物理学报 57 3807]
[4] Fitzgerald E A,Lee M L,Yu B,Lee K L,Dohrman C L,Isaacson D,Langdo T A,Antoniadis D A 2005 International Electron Devices Meeting p355
[5] Sanuki T,Oishi A,Morimasa Y 2003 International Electron Devices Meeting p351
[6] Zhang Zh F,Zhang H M,Hu F Y,Xuan R X,Song J J 2009 Acta Phys. Sin. 58 4948 (in Chinese) [张志锋、张鹤鸣、胡辉勇、宣荣喜、宋建军 2009 物理学报 58 4948 ]
[7] Liu X Y,Kang J F,Sun L 2002 IEEE Electron Lett. 23 270
[8] Tezuka T,Sugiyama N 2003 IEEE Trans. on Electron Devices 50 1328
[9] Kingon A I,Maria J P,Streiffe S K 2000 Nature 406 1032
[10] Liu S,White T,2004 IEEE Trans. on Nuclear Science 51 3475
[11] Wu W,Li X,Gildenblat G,Workman G Veeraraghavan S,McAndrew C,Langevelde R V,Smit G D J,Scholten A J,Klaassen D B M,Watts J 2009 Solid-State Electron. 53 18
[12] Young K K 1989 IEEE Trans. on Electron Devices 36 399
[13] Venkataraman V,Nawal S,Kummer M J 2007 IEEE Trans. on Electron Devices 54 554
[14] Kummer M J,Venkataraman V,Nawal S 2006 IEEE Trans. on Electron Devices 53 364
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