脉冲磁控溅射法制备单斜相氧化铒涂层

李新连; 吴平; 邱宏; 陈森; 宋斌斌

doi:10.7498/aps.60.036805

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摘要

用中频脉冲反应磁控溅射法,在溅射功率为78 W,93 W和124 W以及衬底温度分别为室温,500 ℃及677 ℃下制备了氧化铒涂层.采用原子力显微镜、纳米压痕、X射线衍射和掠入射X射线衍射法研究了涂层的形貌、力学性能及物相结构.测量了涂层的电学性能.结果显示,脉冲磁控溅射沉积氧化铒涂层具有较高的沉积速率.实验制备得到了单斜相结构的氧化铒涂层.提高溅射功率时,沉积速率从28 nm/min增大至68 nm/min,涂层的结晶质量显著下降.提高衬底温度至500 ℃和677 ℃时,单斜相衍射峰强度下降.分析认为

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作者及机构信息

1.
北京科技大学应用科学学院物理系,北京 100083

参考文献

[1]	Liang J J, Chen W D, Wang Y Q, Chang Y, Wang Z G 2000 Chin. Phys. 9 0783
[2]	Miritello M, Lo Savio R, Piro A M, Franzò G, Priolo F, Lacona F, Bongiorno C 2006 J. Appl. Phys. 100 013502
[3]	Losurdo M, Giangregorio M M, Bruno G, Yang D X, Irene E A, Suvorova A A, Saunders M 2007 Appl. Phys. Lett. 91 091914
[4]	Singh M P, Thakur C S, Shalini K, Bhat N, Shivashankar S A 2003 Appl. Phys. Lett. 83 2889
[5]	Wong C P C, Salavy J F, Kim Y, Kirillov I, Rajendra Kumar E, Morley N B, Tanaka S, Wu Y C 2008 Fusion Eng. Des. 83 850
[6]	Chen H, Zhou T, Lü R, Yang Z, Wu Z, Xia D 2009 J. Nucl. Mater. 386-388 904
[7]	Pint B A, DeVan J H, DiStefano J R 2002 J. Nucl. Mater. 307-311 1344
[8]	Levchuk D, Levchuk S, Maier H, Bolt H, Suzuki A 2007 J. Nucl. Mater. 367-370 1033
[9]	Chikada T, Suzuki A, Yao Z Y, Sawada A, Terai T, Muroga T 2007 Fusion Eng. Des. 82 2572
[10]	Sawada A, Suzuki A, Terai T 2006 Fusion Eng. Des. 81 579
[11]	Yao Z Y, Suzuki A, Muroga T, Yeliseyeva O, Nagasaka T 2006 Fusion Eng. Des. 81 951
[12]	Adelhelm C, Pickert T, Balden M, Rasinski M, Plocinski T, Ziebert C, Koch F, Maier H 2009 Scripta Mater. 61 789
[13]	Tang M, Lu P, Valdez J A, Sickafus K E 2006 J. Appl. Phys. 99 063514
[14]	Adachi G Y, Imanaka N 1998 Chem. Rev. 98 1479
[15]	Guo Q X, Zhao Y S, Jiang C, Mao W L, Wang Z W, Zhang J Z, Wang Y J 2007 Inorg. Chem. 46 6164
[16]	Kelly P J, Henderson P S, Arnell R D, Roche G A, Carter D 2000 J. Vac. Sci. Technol. A 18 2890
[17]	Sproul W D 1998 Vacuum 51 641
[18]	Ye Z Y, Zhang Q Y 2001 Chin. Phys. 10 0329
[19]	Zhang Q Y, Ma T C, Pan Z Y, Tang J Y 2000 Acta Phys. Sin. 49 0297(in Chinese)[张庆瑜、马腾才、潘正瑛、汤家镛 2000 物理学报 49 0297]
[20]	Wu F M, Shi J Q, Wu Z Q 2001 Acta Phys. sin. 50 1555(in Chinese)[吴锋民、施建青、吴自勤 2001 物理学报 50 1555]
[21]	Lan W, Liu X Q, Huang C M, Tang G M, Yang Y, Wang Y Y 2006 Acta Phys. Sin. 55 0748(in Chinese)[兰伟、刘雪芹、黄春明、唐国梅、杨扬、王印月 2006 物理学报 55 0748]
[22]

施引文献

[1]	Liang J J, Chen W D, Wang Y Q, Chang Y, Wang Z G 2000 Chin. Phys. 9 0783
[2]	Miritello M, Lo Savio R, Piro A M, Franzò G, Priolo F, Lacona F, Bongiorno C 2006 J. Appl. Phys. 100 013502
[3]	Losurdo M, Giangregorio M M, Bruno G, Yang D X, Irene E A, Suvorova A A, Saunders M 2007 Appl. Phys. Lett. 91 091914
[4]	Singh M P, Thakur C S, Shalini K, Bhat N, Shivashankar S A 2003 Appl. Phys. Lett. 83 2889
[5]	Wong C P C, Salavy J F, Kim Y, Kirillov I, Rajendra Kumar E, Morley N B, Tanaka S, Wu Y C 2008 Fusion Eng. Des. 83 850
[6]	Chen H, Zhou T, Lü R, Yang Z, Wu Z, Xia D 2009 J. Nucl. Mater. 386-388 904
[7]	Pint B A, DeVan J H, DiStefano J R 2002 J. Nucl. Mater. 307-311 1344
[8]	Levchuk D, Levchuk S, Maier H, Bolt H, Suzuki A 2007 J. Nucl. Mater. 367-370 1033
[9]	Chikada T, Suzuki A, Yao Z Y, Sawada A, Terai T, Muroga T 2007 Fusion Eng. Des. 82 2572
[10]	Sawada A, Suzuki A, Terai T 2006 Fusion Eng. Des. 81 579
[11]	Yao Z Y, Suzuki A, Muroga T, Yeliseyeva O, Nagasaka T 2006 Fusion Eng. Des. 81 951
[12]	Adelhelm C, Pickert T, Balden M, Rasinski M, Plocinski T, Ziebert C, Koch F, Maier H 2009 Scripta Mater. 61 789
[13]	Tang M, Lu P, Valdez J A, Sickafus K E 2006 J. Appl. Phys. 99 063514
[14]	Adachi G Y, Imanaka N 1998 Chem. Rev. 98 1479
[15]	Guo Q X, Zhao Y S, Jiang C, Mao W L, Wang Z W, Zhang J Z, Wang Y J 2007 Inorg. Chem. 46 6164
[16]	Kelly P J, Henderson P S, Arnell R D, Roche G A, Carter D 2000 J. Vac. Sci. Technol. A 18 2890
[17]	Sproul W D 1998 Vacuum 51 641
[18]	Ye Z Y, Zhang Q Y 2001 Chin. Phys. 10 0329
[19]	Zhang Q Y, Ma T C, Pan Z Y, Tang J Y 2000 Acta Phys. Sin. 49 0297(in Chinese)[张庆瑜、马腾才、潘正瑛、汤家镛 2000 物理学报 49 0297]
[20]	Wu F M, Shi J Q, Wu Z Q 2001 Acta Phys. sin. 50 1555(in Chinese)[吴锋民、施建青、吴自勤 2001 物理学报 50 1555]
[21]	Lan W, Liu X Q, Huang C M, Tang G M, Yang Y, Wang Y Y 2006 Acta Phys. Sin. 55 0748(in Chinese)[兰伟、刘雪芹、黄春明、唐国梅、杨扬、王印月 2006 物理学报 55 0748]
[22]

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脉冲磁控溅射法制备单斜相氧化铒涂层

1. 北京科技大学应用科学学院物理系,北京 100083

收稿日期: 2010-04-07

修回日期: 2010-06-25

刊出日期: 2011-03-15

摘要: 用中频脉冲反应磁控溅射法,在溅射功率为78 W,93 W和124 W以及衬底温度分别为室温,500 ℃及677 ℃下制备了氧化铒涂层.采用原子力显微镜、纳米压痕、X射线衍射和掠入射X射线衍射法研究了涂层的形貌、力学性能及物相结构.测量了涂层的电学性能.结果显示,脉冲磁控溅射沉积氧化铒涂层具有较高的沉积速率.实验制备得到了单斜相结构的氧化铒涂层.提高溅射功率时,沉积速率从28 nm/min增大至68 nm/min,涂层的结晶质量显著下降.提高衬底温度至500 ℃和677 ℃时,单斜相衍射峰强度下降.分析认为

关键词:

Monoclinic phase of erbium oxide coatings fabricated by pulsed magnetron sputtering

1.
Department of Physics, School of Applied Science, University of Science and Technology Beijing, Beijing 100083, China

Received Date: 07 April 2010

Accepted Date: 25 June 2010

Published Online: 15 March 2011

Abstract: Erbium oxide coatings were fabricated by midfrequency pulsed reactive magnetron sputtering by varying the deposition conditions with respect to the sputtering power from 78 W to 124 W and substrate temperature from room temperature to 677 ℃. Atomic force microscopy, nanoindentation, X-ray diffraction and grazing incidence X-ray diffraction were used to investigate the coatings’ surface morphology, mechanical properties and crystallization behaviors. Electrical properties of the coatings were also measured. Erbium oxide coatings fabricated by pulsed magnetron sputtering have high deposition rate, varying from 28 nm/min to 68nm/min. A monoclinic Er2O3 phase is obtained in the coatings. The crystalline quality of the coatings decreases with the increasing of the sputtering power. The diffraction intensity of monoclinic phase decreases as the substrate temperature was increased from room temperature to 500 ℃ and 677 ℃. It is believed that the high deposition rate and low substrate temperature could lead to the formation of the monoclinic Er2O3 coatings. The hardness and elastic modulus of the coatings deposited at substrate temperatures from room temperature to 677 ℃ vary from 11.9 GPa to 15.7 GPa and from 179 GPa to 225 GPa, respectively. The coatings deposited from room temperature to 677℃ all have high resistivity, varying from 1.5×1012 Ω ·cm to 3.1×1012 Ω ·cm, meeting the requirements of the insulating coatings in application to fusion reactor.

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