-
[1] Jiang Z, Zhang X L, Huang D X 2006 Acta Phys. Sin. 55 3196 (in Chinese) [蒋 中、张新亮、黄徳修 2006 物理学报 55 3196]
[2] Hunsche S, Heesel H, Ewertz A, Kurz H 1993 Phys. Rev. B 48 17818
[3] Leitenstorfer A, Fürst C, Laubereau A, Kaiser W, Trnkle G, Weimann G 1996 Phys. Rev. Lett. 76 1545
[4] Lin W Z, Fujimoto L G, Ippen E P 1987 Appl. Phys. Lett. 50 124
[5] Lin W Z, Schoenlein R W, Fujimoto J G 1988 IEEE Journal of Quantum Electronics 24 267
[6] Rosenwaks Y, Hanna M C, Levi D H, Szmyd D M, Ahrenkiel R K, Nozik A J 1993 Phys. Rev. B 48 675
[7] Fatti N D, Langot P, Tommasi R, vallée F 1999 Phys. Rev. B 59 4576
[8] Guo B, Wen J H, Zhang H C, Liao R, Lai T S, Lin W Z 2001 J. Infrared Millim. Waves. 20 179 (in Chinese) [郭 冰、文锦辉、张海朝、廖 睿、赖天树、林位株 2001 红外与毫米波学报 20 179]
[9] Bennett B R, Soref R A, Alamo J A D 1990 IEEE Journal of Quantum Electronics 26 113
[10] Prabhu S S, Vengurlekar A S 2004 J. Appl. Phys. 95 7803
[11] Trnkle G, Lach E, Forchel A, Scholz F, Ell C, Haug H, Weimann G, Griffiths G, Kroemer, Subbanna S 1987 Phys. Rev. B 36 6712
[12] Güven K, Tanatar B 1996 Superlatt. Microstruct 20 81
[13] Juodawlkis P W, Ralph S E 2000 Appl. Phys. Lett. 76 1722
[14] Nagai T, Inagaki T J, Kanemitsu Y 2004 Appl. Phys. Lett. 84 1284
[15] Zhang Y, Sarma S D 2005 Phys. Rev. B 72 125303
[16] Collet J H, Hunsche S, Heesel H, Kurz H 1994 Phys. Rev. B 50 10649
[17] Stanton C J, Bailey D W 1993 Phys. Rev. B 47 1624
[18] Ganikhanov F, Burr K C, Hilton D J, Tang C L 1999 Phys. Rev. B 60 8890
[19] Henriques A B, Obukhov S, Goncalves L C D, Souza P L, Yavich B 1997 phys. Stat. sol. (a) 164 133
[20] Trnkle G, Leier H, Forchel A 1987 Phys. Rev. Lett. 58 419
[21] Nagai T, Inagaki T J, Kanemitsu Y 2004 Appl. Phys. Lett. 84 1284
[22] Langot P, Tommasi R, vallée F 1996 Phys. Rev. B 54 1775
[23] Ortiz V, Nagle J, Alexandrou A 2002 Appl. Phys. Lett. 80 2505
[24] Lai T S, Teng L H, Jiao Z X, Xu H H, Lei L, Wen J H, Lin W Z 2007 Appl. Phys. Lett. 91 062110
[25] Ahrenkiel R K, Lundstrom M S 1993 Minority Carries in Ⅲ-Ⅴ Semiconductors: Physics and Applications(New York: Academic) p274
[26] Xu Z Y, Tang C L 1984 Appl. Phys. Lett. 44 69
-
[1] Jiang Z, Zhang X L, Huang D X 2006 Acta Phys. Sin. 55 3196 (in Chinese) [蒋 中、张新亮、黄徳修 2006 物理学报 55 3196]
[2] Hunsche S, Heesel H, Ewertz A, Kurz H 1993 Phys. Rev. B 48 17818
[3] Leitenstorfer A, Fürst C, Laubereau A, Kaiser W, Trnkle G, Weimann G 1996 Phys. Rev. Lett. 76 1545
[4] Lin W Z, Fujimoto L G, Ippen E P 1987 Appl. Phys. Lett. 50 124
[5] Lin W Z, Schoenlein R W, Fujimoto J G 1988 IEEE Journal of Quantum Electronics 24 267
[6] Rosenwaks Y, Hanna M C, Levi D H, Szmyd D M, Ahrenkiel R K, Nozik A J 1993 Phys. Rev. B 48 675
[7] Fatti N D, Langot P, Tommasi R, vallée F 1999 Phys. Rev. B 59 4576
[8] Guo B, Wen J H, Zhang H C, Liao R, Lai T S, Lin W Z 2001 J. Infrared Millim. Waves. 20 179 (in Chinese) [郭 冰、文锦辉、张海朝、廖 睿、赖天树、林位株 2001 红外与毫米波学报 20 179]
[9] Bennett B R, Soref R A, Alamo J A D 1990 IEEE Journal of Quantum Electronics 26 113
[10] Prabhu S S, Vengurlekar A S 2004 J. Appl. Phys. 95 7803
[11] Trnkle G, Lach E, Forchel A, Scholz F, Ell C, Haug H, Weimann G, Griffiths G, Kroemer, Subbanna S 1987 Phys. Rev. B 36 6712
[12] Güven K, Tanatar B 1996 Superlatt. Microstruct 20 81
[13] Juodawlkis P W, Ralph S E 2000 Appl. Phys. Lett. 76 1722
[14] Nagai T, Inagaki T J, Kanemitsu Y 2004 Appl. Phys. Lett. 84 1284
[15] Zhang Y, Sarma S D 2005 Phys. Rev. B 72 125303
[16] Collet J H, Hunsche S, Heesel H, Kurz H 1994 Phys. Rev. B 50 10649
[17] Stanton C J, Bailey D W 1993 Phys. Rev. B 47 1624
[18] Ganikhanov F, Burr K C, Hilton D J, Tang C L 1999 Phys. Rev. B 60 8890
[19] Henriques A B, Obukhov S, Goncalves L C D, Souza P L, Yavich B 1997 phys. Stat. sol. (a) 164 133
[20] Trnkle G, Leier H, Forchel A 1987 Phys. Rev. Lett. 58 419
[21] Nagai T, Inagaki T J, Kanemitsu Y 2004 Appl. Phys. Lett. 84 1284
[22] Langot P, Tommasi R, vallée F 1996 Phys. Rev. B 54 1775
[23] Ortiz V, Nagle J, Alexandrou A 2002 Appl. Phys. Lett. 80 2505
[24] Lai T S, Teng L H, Jiao Z X, Xu H H, Lei L, Wen J H, Lin W Z 2007 Appl. Phys. Lett. 91 062110
[25] Ahrenkiel R K, Lundstrom M S 1993 Minority Carries in Ⅲ-Ⅴ Semiconductors: Physics and Applications(New York: Academic) p274
[26] Xu Z Y, Tang C L 1984 Appl. Phys. Lett. 44 69
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