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强辐射催化法提纯多晶硅

陈应天 何祚庥

强辐射催化法提纯多晶硅

陈应天, 何祚庥
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  • 将低纯度的金属硅,提纯成可用于制造太阳能电池的高纯硅材料的主要关键, 是去除材料中的硼杂质.本文提出了一种采用特殊的造渣过程以去除硼杂质的新方法.在这种新方法中,为了促进快速的化学反应,采用高密度的光子作为催化剂,以达到太阳能级硅材料的标准.本文对使用这种新的强辐射催化法炼硅的高温工具、冶炼方法、材料配方、材料的混合、以及渣剂的分离等关键技术,进行了详尽的公开和讨论,并在强辐射光催化原理的研究方面提出了一些探索性的机理.为了方便读者使用本文所提出的方法,建立起一套完整的提炼太阳能级硅材料的工业系统,本文也
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    Chen Y T, Chong K K, Bligh T P, Chen L C, Yunus J, Kannan K S, Lim B H, Lim C S, Alias M A, Bidin N, Aliman O, Salehan S, Rezan S A H, Tam C M, Tan K K 2001 Solar Energy 71 155

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    Miyake M, Hiramatsu T, Maeda M 2006 J. Japan Inst. Metals 70 43

  • [1]

    Bass M. 1995 Handbook of Optics (New York: McGraw-Hill)1 p147

    [2]

    Cruickshark F D, Hills G A 1960 J. Opt. Soc. Am. 50 379

    [3]

    Chen Y T, Chong K K, Bligh T P, Chen L C, Yunus J, Kannan K S, Lim B H, Lim C S, Alias M A, Bidin N, Aliman O, Salehan S, Rezan S A H, Tam C M, Tan K K 2001 Solar Energy 71 155

    [4]

    Chen Y T, Chong K K, Lim C S, Lim B H, Tan K K, Aliman O, Bligh T P, Tan B K, Ismail G 2002 Solar Energy 72 531

    [5]

    Deng F, Tang Z L 2009 Technology of Silicon Polycrystal Manufacture (Beijing, Chemical Industry Press) (in Chinese)[邓 丰、唐正林 2009 多晶硅生产技术 (北京:化学工业出版社) ]

    [6]

    Yang D R 2005 Silicon Semiconductor Materials (Beijing. Mechanical Industry Press) (in Chinese)[杨德仁 2005 半导体硅材料 (北京:机械工业出版社) ]

    [7]

    Orlova E A, Zagrebaev S A, Orlov M A, Kozlov F A, Alekseev V V, Drobyshev A V, Zhmurin V G, Zasorin I I, Kozlova N A 2010 Bulletin of The Lebedev Physics Institute 37 321

    [8]

    Tamendarov M F, Mukashev B N, Abdullin K A, Kulekeev Z A, Bekturganov N S, Beketov B A 2006 PCT Patent WO 041271 A1

    [9]

    Sakaguchi Y, Ishizak M, Kawahara T, Fukai M, Yoshiyagawa M, Aratani F 1992 ISIJ International 32 643

    [10]

    Lynch D C, Oye H. A 2007 PCT Patent WO 127126 A2

    [11]

    Ruixian Science Technology Ltd 2010 CN 101857232 [瑞贤科技股份有限公司 2010 CN 〖12] Gao W X, Chu J H 2010 Commun Phys Chem 11 21(in Chinese)[高文秀、褚君浩 2010 化学物理通讯 11 21]

    [12]

    Strebkov D S, Pinov A, Zadde V V, Tsuo Y S, Touryan K, Murphy L, Gee J M 1998 8th Workshop on Crystalline Silicon Solar Cell Materials and Processes Colorado, The United States of America, August 17—19 1998 p18

    [13]

    Strebkov D S, Pinov A, Zadde V V, Lebedev E N, Belov E P, Efimov N K, Kleshevnikova S I, Touryan K, Bleak D 2004 14th Workshop on Crystalline Silicon Solar Cell and Modules Colorado, The United States of America, August 8-11, 2004 p174

    [14]

    Sakaguchi Y., Yuge N, Nakamura N, Baba H, Hanazawa K, Abe M, Kato Y 1997 14th Eur. PV Solar Energy Conf. Barcelona, Spain, 30 June—4 July, 1997 p157

    [15]

    Schmid F, Khattack C P, Joyce D B 2002 U. S. Patent 6,368,403 B1

    [16]

    Yuge N, Abe M, Hanazawa K, Baba H, Nakamura N, Kato Y, Sakaguchi Y, Hiwasa S, Aratani F 2001 Prog. Photovolt: Res. Appl. 9 203

    [17]

    Ciszek T F, Wang T H, Page M R, Bauer R E, Landry M D 2002 29th IEEE PV Specialist Conference Louisiana, The United States of America, May 20—24, 2002 p131

    [18]

    Khattack C P, Joyce D B, Schmid F 2002 Solar Energy Materials & Solar Cells 74 77

    [19]

    Bildl E, Dietl J, Baueregger R, Seifert D 1986 U. S. Patent 4,588,571

    [20]

    Biello D 2010 www.scientificamerican.com

    [21]

    Ito N, Kondo J, Okazawa K, Okajima M 2006 PCT Patent WO 095663 A2 Shi Jun 2011 New Materials Industry 3 20 (in Chinese)[史 珺 2011 新材料产业 3 20 ]

    [22]

    Chen Y T, Zhang Y, Hu S, Ho T H, Lim B H, Lim C S 2009 Commun. Theor. Phys. 52 549

    [23]

    Lu D, Chen Y T, Hu S, Zhang Y 2010 Commun. Theor. Phys. 54 175

    [24]

    Chen Y T, Zhang Y, Hu S, Ho T H, Lim B H, Lim C S, Chong K K, Tan B K 2009 Commun. Theor. Phys. 52 750

    [25]

    Chen Y T, Chong K K, Lim B H, Lim C S 2003 Solar Energy Materials & Solar Cells 79 1

    [26]

    Chen Y T, Lim B H, Lim C S 2006 Solar Energy 80 268

    [27]

    Zaibel R, Pagan E, Ries H 1995 Solar Energy Material and Solar Cells 37 191

    [28]

    Li L, Chen Y T, Hu S 2009 Commun. Theor. Phys. 51 315

    [29]

    Lu Z P 2006 J. of USTC 36 1244 (in Chinese)[刘祖平 2006 中国科学技术大学学报 36 1244 ]

    [30]

    Chen Y T, Lim B H, Lim C S 2006 J. of Solar Energy Engineering 128 245

    [31]

    Ries H, Schubnell M, 1990 Solar Energy Materials 21 213

    [32]

    Zhang Y S 1981 Annual of Solar Energy Society of China (in Chinese)[张迎胜 1981 中国太阳能学会年会论文]

    [33]

    Chen Y T, Bligh T P 1997 British Patent 9721019.9

    [34]

    He Z X 2009 Proceedings of the Forum on the Technology Development of New Energy and Renewable Energy in China p1 (in Chinese)[何祚庥 2009 中国新能源及可再生能源科技发展论坛,p1]

    [35]

    Kribus A 2006 Commun. & Theor. Phys. 45 163

    [36]

    Kennedy C, Terwilliger K, Milbourne M 2005 2004 DOE Solar Energy Technologies Program Review Meeting NREL/CP-520-36582 Colorado, The United States of America, October 25—28, 2004

    [37]

    Cochran C N 1987 In light Metal (Ed. by Zabreznik R D) p429

    [38]

    Murray J P 1999 Solar Energy 66 133

    [39]

    Rodriquez–Donoso G P, Ruiz J, Fernandez B J, Vazquez-Vaamonde A J 1995 Materials & Design 16 163

    [40]

    Imhof A 1991 Solar Energy Materials 24 733

    [41]

    De Young R J 1986 J. of Quantum Electronics 22 1019

    [42]

    Flamant G, Kurtcuoglu V, Murray J, Steinfeld A 2006 Solar Energy Materials & Solar Cells 90 2099

    [43]

    Tsuchiya M, Sankaranarayanan S K R S, Ramanathan S 2009 Progress in Materials Science 54 981

    [44]

    Roy R, Rao M L, Kanzius J 2008 Materials Research Innovations 12 3

    [45]

    Chen Y T, Ho T H, Lim C S, Lim B H 2010 Chin. Phys. B 19 118105 Chen Y T, Lim C S, Ho T H, Lim B H, Wang Y N 2009 Chin. Phys. Lett. 26 78103

    [46]

    Teixeira L A V, Tokuda Y, Yoko T, Morita K 2009 ISIJ International 49 777

    [47]

    Tolman R C 1938 Principle of statistical mechanics (London: Oxford Univ. Press)

    [48]

    Beijing Yingtian Solar Energy Technology Ltd 2011 Chinese Patentapplication 201110025326.6 [北京应天阳光太阳能技术有限公司2011中国专利申请 201110025326.6]

    [49]

    Beijing Yingtian Solar Energy Technology Ltd 2010 Chinese4 Patentapplication 201010282839.0 [北京应天阳光太阳能技术有限公司2010 中国专利申请 201010282839.0]

    [50]

    Beijing Yingtian Solar Energy Technology Ltd 2011 Chinese Patenapplication 201110000236.1 [北京应天阳光太阳能技术有限公司2011 中国专利申请 201110000236.1]

    [51]

    Morita K, Miki T 2003 Intermetallics 11 1111

    [52]

    Mori N 1995 U. S. Patent 5,454,424

    [53]

    Yuge N, Abe M, Hanazawa K, Baba H, Nakamura N, Kato Y, Sakaguchi Y, Hiwasa S, Aratani F 2001 Prog. Photovolt: Res. Appl. 9 203

    [54]

    Miyake M, Hiramatsu T, Maeda M 2006 J. Japan Inst. Metals 70 43

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  • 收稿日期:  2011-04-12
  • 修回日期:  2011-04-15
  • 刊出日期:  2011-07-15

强辐射催化法提纯多晶硅

  • 1. 中国科学院理论物理研究所,北京 100190

摘要: 将低纯度的金属硅,提纯成可用于制造太阳能电池的高纯硅材料的主要关键, 是去除材料中的硼杂质.本文提出了一种采用特殊的造渣过程以去除硼杂质的新方法.在这种新方法中,为了促进快速的化学反应,采用高密度的光子作为催化剂,以达到太阳能级硅材料的标准.本文对使用这种新的强辐射催化法炼硅的高温工具、冶炼方法、材料配方、材料的混合、以及渣剂的分离等关键技术,进行了详尽的公开和讨论,并在强辐射光催化原理的研究方面提出了一些探索性的机理.为了方便读者使用本文所提出的方法,建立起一套完整的提炼太阳能级硅材料的工业系统,本文也

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