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基于600—2000 nm抽运源的太赫兹相干光源的最新进展

祁春超 欧阳征标

基于600—2000 nm抽运源的太赫兹相干光源的最新进展

祁春超, 欧阳征标
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  • 最近几年,紧凑型、便携式、低廉、可调谐的太赫兹波源由于具有广泛的应用前景因而成为太赫兹领域的研究焦点.波长为600—2000 nm范围的近红外光源由于具有体积紧凑、价格低廉、频率可调谐和工作稳定的特点,所以频繁被选为太赫兹波产生的抽运源.本文着重从双波长可调谐抽运源、内腔光参量振荡器太赫兹发生器两个方面进行了较系统的阐述.分析表明,近红外相对中红外双波长抽运光源由于具有更紧凑的结构而成为研究热点;差频和非线性级联过程由于具有调谐范围宽的特点而成为产生太赫兹辐射的重要手段.
    • 基金项目: 国家自然科学基金(批准号:60877034,60471047),广东省自然科学基金(批准号:8251806001000004)和深圳科学基金(批准号:200720,200805)资助的课题.
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  • [1]

    Cibella S, Ortolani M, Leoni R, Torrioli G, Mahler L, Xu J H, Tredicucci A, Beere H E, Ritchie D A 2009 Appl. Phys. Lett. 95 213501

    [2]

    Shi Y L, Zhou Q L, Zhang C L 2009 Chin. Phys. B 18 4515

    [3]

    Ariyoshi S, Otani C, Dobroiu A, Sato H, Kawase K, Shimizu H M, Taino T, Matsuo H 2006 Appl. Phys. Lett. 88 203503

    [4]

    Chen Q, Tani M, Jiang Z, Zhang X C 2001 J. Opt. Soc. Am. B 18 823

    [5]

    Ma M R, Chen Y L, Wang L M, Wang C 2008 Chin. Phys. B 17 1854

    [6]

    Kawase K, Ogawa Y, Watanabe Y, Inoue H 2003 Opt. Express 11 2549

    [7]

    Kuroda R, Sei N, Yasumoto M 2008 Infrared Phys. Technol. 51 390

    [8]

    Kuroda R, Sei N, Oka T, Yasumoto M, Toyokawa H, Ogawa H, Koike M, Yamada K 2008 Radiat. Phys. Chem. 77 1131

    [9]

    Chen H, Wang L 2009 Chin. Phys. B 18 2785

    [10]

    Shen Y C, Lo T, Taday P F, Cole B E, Tribe W R, Kemp M C 2005 Appl. Phys. Lett. 86 241116/1

    [11]

    Nagel M, Haring B P, Brucherseifer M, Kurz H, Bosserhoff A, Büttner R 2002 Appl. Phys. Lett. 80 154

    [12]

    Tian L, Zhou Q L, Zhao K, Shi Y L, Zhao D M, Zhao S Q, Zhao H, Bao R M, Zhu S M, Miao Q, Zhang C L 2011 Chin. Phys. B 20 010703

    [13]

    Liu H B, Chen Y Q, Zhang X C 2007 J. Pharm. Sci. 96 927

    [14]

    Auston D H 1975 Appl. Phys. Lett. 26 101

    [15]

    Lee C 1977 Appl. Phys. Lett. 30 8

    [16]

    Gu P, Tani M, Kono S, Sakai K, Zhang X C 2002 J. Appl. Phys. 91 5533

    [17]

    Huber R, Brodschelm A, Tauser F, Leitenstorfer A 2000 Appl. Phys. Lett. 76 3191

    [18]

    Liu K, Xu J, Zhang X C 2004 Appl. Phys. Lett. 85 863

    [19]

    Dai J M, Karpowicz, Zhang X C 2009 Phys. Rev. Lett. 103 023001

    [20]

    Esaki L 1958 Phys. Rev. 109 603

    [21]

    Gunn J B 1963 Sol. St. Comm. 1 88

    [22]

    Madey J M 1971 J. Appl. Phys. 42 1906

    [23]

    Dyakonov M, Shur M S 1993 Phys. Rev. Lett. 71 2465

    [24]

    Knap W, Deng Y, Rumyantsev S, Shur M S 2002 Appl. Phys. Lett. 81 4637

    [25]

    Deng Y, Kersting R, Xu J, Ascazubi R, Zhang X C, Shur M S, Gaska R, Simin G S, Asif Khan M, Ryzhii V 2004 Appl. Phys. Lett. 84 70

    [26]

    Carr G L, Martin M C, McKinney W R, Mckinney K, Neil G R, Williams G P 2002 Nature 420 153

    [27]

    Korolev A, Zaitsev S, Golenitskij I, Zhary Y, Zakurdayev A, Lopin M, Meleshkevich P, Gelvich E, Negirev A, Pobedonostsev A, Poognin V, Homich V, Kargin A 2001 IEEE Trans. Electron Devices 48 2929

    [28]

    Ives R 2004 IEEE Trans. Plasma Sci. 32 1277

    [29]

    Tucek J, Gallagher D, Kreischer K 2008 Proc. IEEE IVEC Apr. 16

    [30]

    Mineo M, Paoloni C 2010 IEEE Trans. Electron Devices 57 1481

    [31]

    Mathis L E S, Parker J T 1963 Appl. Phys. Lett. 16 16

    [32]

    Chang T Y, Bridges T J 1970 Opt. Commun. 1 423

    [33]

    Köhler R, Tredicucci A, Beltram F, Beere H E, Linfield E H, Davies A G, Ritchie DA, Iotti R C, Rossi F 2002 Nature 417 156

    [34]

    Hu Q, Williams B S, Kumar S, Callebaut H, Kohen S, Reno J L 2005 Semi. Sci. Tech. 20 S228

    [35]

    Zhang K C, Wu Z H, Liu S G 2008 Chin. Phys. B 17 3402

    [36]

    Hu M, Zhang Y X, Yan Y, Zhong R B, Liu S G 2009 Chin. Phys. B 18 3877

    [37]

    Liu W X, Tang C X, Huang W H 2010 Chin. Phys. B 19 062902

    [38]

    Sun B, Liu J S, Li E B, Yao J Q 2009 Chin. Phys. B 18 2846

    [39]

    Liu H, Xu D G, Yao J Q 2009 Chin. Phys. B 18 1077

    [40]

    Qi C C, Zuo D L, Lu Y Z, Miao L, Yin J, Cheng Z H 2010 Optics and Lasers in Engineering 48 888

    [41]

    Qi C C, Zuo D L, Meng F Q, Tang J, Cheng Z H 2010 Opt. Commun. 283 574

    [42]

    Qi C C, Zuo D L, Lu Y Z, Tang J, Cheng Z H 2010 Chin. Phys. B 19 114202

    [43]

    Qi C C, Zuo D L, Meng F Q, Lu Y Z, Jiu Z X, Cheng Z H 2009 Acta Phys. Sin. 58 4641(in Chinese)[祁春超、左都罗、孟凡奇、卢彦兆、纠智先、程祖海 2009 物理学报 58 4641]

    [44]

    Li M, Mi X W 2009 Chin. Phys. B 18 5534

    [45]

    Kono S, Tani M, G P, Sakai K 2000 Appl. Phys. Lett. 77 4104

    [46]

    Brown E R, Söderstrom J R, Parker C D, Mahoney L J, Molvar M K, McGill T C 1991 Appl. Phys. Lett. 58 2291

    [47]

    Belkin M A, Capasso F, Xie F F, Belyanin A, Fischer M, Wittmann A, Faist J 2008 Appl. Phys. Lett. 92 201101

    [48]

    Gregory S, Baker C, Tribe W R, Bradley I V, Evans M J, Linfield E H, Davies A G, Missous M 2005 IEEE J. Quantum Electron. 41 717

    [49]

    Ito H, Nakajima F, Furuta T, Ishibashi T 2005 Semicond. Sci. Technol. 20 S191

    [50]

    Demers J R, Logan R T, Jr, Brown E R 2007 Microwave Photonics Tech. Digest Victoria Canada 92

    [51]

    Gu P, Tani M, Hyodo M, Sakai K, Hidaka T 1998 Jpn. J. Appl. Phys. 37 L976

    [52]

    Klehr A, Fricke J, Knauer A, Erbert G, Walther M, Wilk R, Mikulics M, Koch M 2008 IEEE J. Sel. Top. Quantum Electron. 14 289

    [53]

    Osborne S, O'Brien S, O'Reilly E P, Huggard P G, Ellison B N 2008 Electron. Lett. 44 296

    [54]

    Hui R, Zhu B, Demarest K, Allen C 1999 IEEE Photon. Technol. Lett. 11 518

    [55]

    Phelan R, Weldon V, Lynch V M, Donegan J F 2002 Electron. Lett. 38 31

    [56]

    Pajarola S, Guekos G, Mork J 1996 IEEE Photon. Technol. Lett. 8 157

    [57]

    Hoffmann S, Hofmann M, Kira M, Koch S W 2005 Semicond. Sci. Technol.20 S205

    [58]

    Kim N, Shin J, Sim E, Lee C W, Yee D S, Jeon M Y, Jang Y, Park K H 2009 Opt. Express 17 13851

    [59]

    Li S P, Ding H, Chan K T 1997 Electron. Lett. 33 52

    [60]

    Chen D, Fu H, Liu W 2008 Electron. Lett. 44

    [61]

    Zhang H, Liu B, Luo J H, Sun J, Ma X R, Jia C L, Wang S X 2009 Opt. Commun.282 4114

    [62]

    Pan S L, Yao J P 2009 Opt. Express 17 5414

    [63]

    Jeon M Y, Kim N, Shin J, Jeong J S, Han S P, Lee C W, Leem Y A, Yee D S, Chun H S, Park K H 2010 Opt. Express 18 12291

    [64]

    Jiang Y, Ding Y J J 2007 Appl. Phys. Lett. 91 091108

    [65]

    Tochitsky S Y, Sung C, Trubnick S E, Joshi C, Vodophyanov K L 2007 J. Opt. Soc. Am. B 24 2509

    [66]

    Shi W, Ding Y J, Fernelius N, Vodopyanov K 2002 Opt. Lett. 27 1454

    [67]

    Sasaki Y, Avetsyan Y, Kawase K 2002 Nonlinear Optics: Materials, Fundamentals and Applications (NLO) paper: MB5

    [68]

    Shi W, Ding Y J 2003 Appl. Phys. Lett.83 848

    [69]

    Shi W, Ding Y J 2005 Opt. Lett. 30 1030

    [70]

    Ding Y J 2007 IEEE J. Sel. Top. Quantum Electron. 13 705

    [71]

    Ndiaye C, Sugiyama T, Nagano S 2007 Conference on Lasers and Electro-Optics (CLEO Pacific Rim)

    [72]

    Sasaki Y, Yokoyama H, Ito H 2004 Opt. Express 12 3066

    [73]

    Miyamoto K, Minamide H, Fujiwara M, Hashimoto H, Ito H 2008 Opt. Lett. 33 252

    [74]

    Miyamoto K, Ohno S, Fujiwara M, Minamide H, Hashimoto H, Ito H 2009 Opt. Express 17 14832

    [75]

    Burgess I B, Zhang Y N, McCutcheon M W, Rodriguez A W, Bravo-Abad J, Johnson S G, Loncar M 2009 Opt. Express 17 20099

    [76]

    Ruan Z, Veronis G, Vodopyanov K L, Fejer M M, Fan S 2009 Opt. Express 17 13502

    [77]

    Zhao P, Ragam S, Ding Y J, Zotova I B 2010 Opt. Lett. 35 3979

    [78]

    Edwards T, Walsh D, Spurr M, Rae C, Dunn M, Browne P 2006 Opt. Express 14 1582

    [79]

    Breunig I, Sowade R, Buse K 2007 Opt. Lett. 32 1450

    [80]

    Kiessling J, Sowade R, Breunig I, Buse K, Dierolf V 2009 Opt. Express 17 87

    [81]

    Sowade R, Breunig I, Cámara Mayorga I, Kiessling J, Tulea C, Dierolf V, Buse K 2009 Opt. Express 17 22303

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  • 收稿日期:  2011-01-18
  • 修回日期:  2011-03-31
  • 刊出日期:  2011-09-15

基于600—2000 nm抽运源的太赫兹相干光源的最新进展

  • 1. 深圳大学太赫兹技术研究中心,深圳市微纳光子信息技术重点实验室,深圳大学电子科学与技术学院,深圳 518060
    基金项目: 

    国家自然科学基金(批准号:60877034,60471047),广东省自然科学基金(批准号:8251806001000004)和深圳科学基金(批准号:200720,200805)资助的课题.

摘要: 最近几年,紧凑型、便携式、低廉、可调谐的太赫兹波源由于具有广泛的应用前景因而成为太赫兹领域的研究焦点.波长为600—2000 nm范围的近红外光源由于具有体积紧凑、价格低廉、频率可调谐和工作稳定的特点,所以频繁被选为太赫兹波产生的抽运源.本文着重从双波长可调谐抽运源、内腔光参量振荡器太赫兹发生器两个方面进行了较系统的阐述.分析表明,近红外相对中红外双波长抽运光源由于具有更紧凑的结构而成为研究热点;差频和非线性级联过程由于具有调谐范围宽的特点而成为产生太赫兹辐射的重要手段.

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