-
为了进一步提高小尺寸金属氧化物半导体(MOSFET)的性能,在应变硅器件的基础上, 提出了一种新型的异质栅MOSFET器件结构.通过求解二维Poisson方程,结合应变硅技术的物理原理,建立了表面势、表面电场以及阈值电压的物理模型,研究了栅金属长度、功函数以及双轴应变对其的影响. 通过仿真软件ISE TCAD进行模拟仿真,模型计算与数值模拟的结果基本符合. 研究表明：与传统器件相比,本文提出的异质栅应变硅新器件结构的载流子输运效率进一步提高, 可以很好地抑制小尺寸器件的短沟道效应、漏极感应势垒降低效应和热载流子效应, 使器件性能得到了很大的提升.In this paper,we propose a new device structure called HMG SSDOI (hetero-materiel gate strained Si directly on insulator), which combines the advantages of strained-silicon and hetero-material gate technology. By solving 2D Poisson's equation, we present models of the surface potential, surface electric field and threshold voltage for the new structure. These models take into account the effects of the gate length, the work function and the energy band. ISE TCAD is also used to simulate the performance of new device structure. The comparison results of model calculation and mathematic simulation show that the new structure of HMG SSDOI can enhance the carrier transport efficiency and suppress short channel effect, drain induction barrier lower and hot carrier effect, which improves device performance greatly.
-
Keywords:
- strained Si /
- hetero-material gate /
- threshold voltage /
- analytical model
[1] Fiegna C 1994 IEEE Trans. Electron Dev. ED-41 941
[2] Hisamoto D, Kedzierski J 2000 IEEE Trans.Electron Dev. 47 2320
[3] Zhang H M, Cui X Y, Hu H Y, Dai X Y, Xuan R X 2007 Acta Phys. Sin. 56 3504 (in Chinese) [张鹤鸣,崔晓英,胡辉勇,戴显英,宣荣喜 2007 物理学报 56 3504]
[4] Zhou X 2000 IEEE Trans. Electron Dev. 47 113
[5] LongW, Qu H J, JenMK 1999 IEEE Trans. Electron Dev. 46 865
[6] Venkataraman V, Kumar M J 2007 IEEE Trans. Electron Dev. 54 554
[7] Kumar M J, Venkataraman V 2006 IEEE Trans. Electron Dev. 53 1780
[8] Yao F, Xue C L, Cheng B W, Wang Q M 2007 Acta Phys. Sin. 56 6654 (in Chinese) [姚飞,薛春来,成步文,王启明 2007 物理学报 56 6654]
[9] Song J J, Zhang H M, Hu H Y, Dai X Y, Xuan R X 2007 Chin. Phys. 16 3827
[10] Kim S J, Shim T H, Choi K R, Park J G 2009 Semicond. Sci. Technol. 24 035014
-
[1] Fiegna C 1994 IEEE Trans. Electron Dev. ED-41 941
[2] Hisamoto D, Kedzierski J 2000 IEEE Trans.Electron Dev. 47 2320
[3] Zhang H M, Cui X Y, Hu H Y, Dai X Y, Xuan R X 2007 Acta Phys. Sin. 56 3504 (in Chinese) [张鹤鸣,崔晓英,胡辉勇,戴显英,宣荣喜 2007 物理学报 56 3504]
[4] Zhou X 2000 IEEE Trans. Electron Dev. 47 113
[5] LongW, Qu H J, JenMK 1999 IEEE Trans. Electron Dev. 46 865
[6] Venkataraman V, Kumar M J 2007 IEEE Trans. Electron Dev. 54 554
[7] Kumar M J, Venkataraman V 2006 IEEE Trans. Electron Dev. 53 1780
[8] Yao F, Xue C L, Cheng B W, Wang Q M 2007 Acta Phys. Sin. 56 6654 (in Chinese) [姚飞,薛春来,成步文,王启明 2007 物理学报 56 6654]
[9] Song J J, Zhang H M, Hu H Y, Dai X Y, Xuan R X 2007 Chin. Phys. 16 3827
[10] Kim S J, Shim T H, Choi K R, Park J G 2009 Semicond. Sci. Technol. 24 035014
计量
- 文章访问数: 7641
- PDF下载量: 429
- 被引次数: 0
下载:
