单电子在含有双能级原子的空腔中的输运行为

史宏云; 陈贺胜

doi:10.7498/aps.61.020301

摘要

本文构造了一个含有双能级原子的空腔系统,用来模拟一个含有双能级量子点的微腔系统, 并研究其对电子输运行为的影响.通过对该系统输运方程的求解,给出了系统输运系数的具体表达式,然后通过调整空腔及原子的本征特性以及两者的耦合性质,研究了电子在腔体中的输运行为对腔体本征属性的依赖关系. 这些结果可以为如何操控电子在微观结构器件中的输运特性提供一定的理论支持.

关键词:

单电子 /
输运 /
双能级原子

Quantum dot is a typical nano functional device, which has a very attractive prospect in biotechnology, semiconductor technology, quantum optics and other fields. In this paper, we construct a cavity containing a two-level atom to simulate a nano cavity coupling a two-level quantum dot, and study the electrical transmission in the cavity. We solve the transfer function of a single electron and obtain the formulas of transportation and reflection. By adjusting the intrinsic properties of the cavity and the atom and coupling between them, we study the transmission characteristics of a single electron in the cavity and understand the role of the two-level atom and the cavity in the electrical transport. The results can provide some theoretical support for quantum control of the electron transport in a nano device.

Keywords:

作者及机构信息

1.
扬州大学物理科学与技术学院, 扬州 225009

Authors and contacts

1.
College of Physics Science and Technology, Yangzhou University, Yangzhou 225009, China

参考文献

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[2]	Peter E, Senellart P, Martrou D, Lematre A, Hours J,Gérard J M 2005 Bloch. J. Phys. Rev. Lett. 95 067401
[3]	Srinivasan K, Painter O 2007 Nature(London) 450 862
[4]	Wolfgang Merkel, Holger Mack, Schleich W P, Eric Lutz, Paulus G G, Bertrand Girard Phys. Rev. A 76 023417
[5]	Zhou L, Lu J, Sun C P 2007 Phys. Rev. A 76 012313
[6]	Liao J Q, Huang J F, Liu Y X, Kuang L M, Sun C P 2009 Phys. Rev. A 80 014301
[7]	Shen J T, Fan S H 2009 Phys. Rev. A 79 023837
[8]	Paolo Longo, Peter Schmitteckert, Kurt Busch 2010 Phys. Rev. Lett. 104 023602
[9]	Liao J Q, Law C K 2010 Phys. Rev. A 82 053836
[10]	Fan S H, Sukru Ekin Kocabas, Shen J T 2010 Phys. Rev. A 82 063821
[11]	Wu S Q, Chen X W, Sun W L, Wang X J 2004 Acta Phys. Sin. 53 2336(in Chinese) [吴绍全,谌雄文,孙威立,王顺金 2004 物理学报 53 2336]
[12]	Peter E, Senellart P, Martrou D, Lemaitre A, Hours J, Ge’rard J M, Bloch1 J 2005 Phys. Rev. Letts. 95 067401
[13]	Kartik Srinivasan, Oskar Painter 2007 Phys. Rev. A 75 023814
[14]	Bai J X, Mi XW, Li D J 2010 Acta Phys. Sin. 59 6205(in Chinese) [柏江湘,米贤武,李德俊 2010 物理学报 59 6205
[15]	Likharev K 1987 IEEE Trans. Magn. 23 1142
[16]	Fulton T A, Dolan G J 1987 Phys. Rev. Lett. 59 109
[17]	Laakso M A, Heikkilä T T, Nazarov Y V 2010 Phys. Rev. B 82 205316
[18]	Wang L J, Cao G, Tu T, Li H O, Zhou C, Hao X J, Su Z, Guo G C, Jiang H W, Guo G P 2010 Appl. Phys. Lett. 97 262113
[19]	Stampfer C, Schurtenberger E, Molitor F, Guettinger J, Ihn T, Ensslin K 2008 Nano. Lett. 8 2378
[20]	David M, Kuo T 2006 Phys. Rev. B 73 155331

施引文献

[1]	Reithmaier J P, Sek G, L ffler A, Hofmann C, Kuhn S,Reitzenstein S, Keldysh L,Kulakovskii V, Reinecke T L,Forchel A 2004 Nature 432 197
[2]	Peter E, Senellart P, Martrou D, Lematre A, Hours J,Gérard J M 2005 Bloch. J. Phys. Rev. Lett. 95 067401
[3]	Srinivasan K, Painter O 2007 Nature(London) 450 862
[4]	Wolfgang Merkel, Holger Mack, Schleich W P, Eric Lutz, Paulus G G, Bertrand Girard Phys. Rev. A 76 023417
[5]	Zhou L, Lu J, Sun C P 2007 Phys. Rev. A 76 012313
[6]	Liao J Q, Huang J F, Liu Y X, Kuang L M, Sun C P 2009 Phys. Rev. A 80 014301
[7]	Shen J T, Fan S H 2009 Phys. Rev. A 79 023837
[8]	Paolo Longo, Peter Schmitteckert, Kurt Busch 2010 Phys. Rev. Lett. 104 023602
[9]	Liao J Q, Law C K 2010 Phys. Rev. A 82 053836
[10]	Fan S H, Sukru Ekin Kocabas, Shen J T 2010 Phys. Rev. A 82 063821
[11]	Wu S Q, Chen X W, Sun W L, Wang X J 2004 Acta Phys. Sin. 53 2336(in Chinese) [吴绍全,谌雄文,孙威立,王顺金 2004 物理学报 53 2336]
[12]	Peter E, Senellart P, Martrou D, Lemaitre A, Hours J, Ge’rard J M, Bloch1 J 2005 Phys. Rev. Letts. 95 067401
[13]	Kartik Srinivasan, Oskar Painter 2007 Phys. Rev. A 75 023814
[14]	Bai J X, Mi XW, Li D J 2010 Acta Phys. Sin. 59 6205(in Chinese) [柏江湘,米贤武,李德俊 2010 物理学报 59 6205
[15]	Likharev K 1987 IEEE Trans. Magn. 23 1142
[16]	Fulton T A, Dolan G J 1987 Phys. Rev. Lett. 59 109
[17]	Laakso M A, Heikkilä T T, Nazarov Y V 2010 Phys. Rev. B 82 205316
[18]	Wang L J, Cao G, Tu T, Li H O, Zhou C, Hao X J, Su Z, Guo G C, Jiang H W, Guo G P 2010 Appl. Phys. Lett. 97 262113
[19]	Stampfer C, Schurtenberger E, Molitor F, Guettinger J, Ihn T, Ensslin K 2008 Nano. Lett. 8 2378
[20]	David M, Kuo T 2006 Phys. Rev. B 73 155331

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