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In this paper, based on the framework of kp method, the influence of uniaxial stress on the conduction band energy-band structure of bulk-Si is analysed first, the coupling of 1 and 2 bands at the X point, and the influence of that band-band coupling on the minimum of energy valley are then separately discussed under the action of shear strain. On that basis, the dispersion relation close to the minimum is obtained. Furthermore, the different valley orientations need to be taken into account. Using the coordinate transformation, the modelling for dispersion relation of each valley with arbitrary uniaxial stress is finally achieved. The proposed analytical model in this paper is also suited to the understanding of the physical properties of uniaxial strained Si material and may provide some references for the study on bandstructure and electrical properties of the inversion layer in uniaxial strained Si nMOSFETs.
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Keywords:
- uniaxial stress /
- strained-Si /
- kp method /
- dispersion relation
[1] Zhang Z F, Zhang H M, Hu H Y, Xuan R X, Song J J 2009 Acta Phys. Sin. 58 4948 (in Chinese) [张志锋, 张鹤鸣, 胡辉勇, 宣荣喜, 宋建军 2009 物理学报 58 4948]
[2] Thompson S E, Sun G Y, Choi Y S 2006 IEEE Trans.Electron Devices 53 1010
[3] Song J J, Zhang H M, Hu H Y, Dai X Y, Xuan R X 2007 Chin. Phys. 16 3827
[4] Ma J L, Zhang H M, Song J J, Wang G Y, Wang X Y 2011 Acta Phys.Sin. 60 017101 (in Chinese) [马建立, 张鹤鸣, 宋建军, 王冠宇, 王晓艳 2011 物理学报 60 017101]
[5] Rahman M M 2008 International Conference on Solid-State and Integrated-Circuit Technology (ICSICT) p142
[6] Viktor S, Siegfried S 2008 Solid-State Electronics 52 1861
[7] Soline R, Nicolas C 2003 Journal of Applied Physics 94 5088
[8] Dhar S, Ungersbök E, Kosina S, Grasser T, Selberherr S 2007 IEEE Trans.Nano. 6 97
[9] Hensel J C, Hasegawa H, Nakayama M 1965 Physical Review 138 A225
[10] Tan Y H, Li X J, Tian L L, Yu Z P 2008 IEEE Trans.Electron Devices 55 1386
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[1] Zhang Z F, Zhang H M, Hu H Y, Xuan R X, Song J J 2009 Acta Phys. Sin. 58 4948 (in Chinese) [张志锋, 张鹤鸣, 胡辉勇, 宣荣喜, 宋建军 2009 物理学报 58 4948]
[2] Thompson S E, Sun G Y, Choi Y S 2006 IEEE Trans.Electron Devices 53 1010
[3] Song J J, Zhang H M, Hu H Y, Dai X Y, Xuan R X 2007 Chin. Phys. 16 3827
[4] Ma J L, Zhang H M, Song J J, Wang G Y, Wang X Y 2011 Acta Phys.Sin. 60 017101 (in Chinese) [马建立, 张鹤鸣, 宋建军, 王冠宇, 王晓艳 2011 物理学报 60 017101]
[5] Rahman M M 2008 International Conference on Solid-State and Integrated-Circuit Technology (ICSICT) p142
[6] Viktor S, Siegfried S 2008 Solid-State Electronics 52 1861
[7] Soline R, Nicolas C 2003 Journal of Applied Physics 94 5088
[8] Dhar S, Ungersbök E, Kosina S, Grasser T, Selberherr S 2007 IEEE Trans.Nano. 6 97
[9] Hensel J C, Hasegawa H, Nakayama M 1965 Physical Review 138 A225
[10] Tan Y H, Li X J, Tian L L, Yu Z P 2008 IEEE Trans.Electron Devices 55 1386
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