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[1] Zhang Z F, Zhang H M, Hu H Y, Xuan R X, Song J J 2009 Acta Phys. Sin. 58 4948 (in Chinese) [张志锋, 张鹤鸣, 胡辉勇, 宣荣喜, 宋建军 2009 物理学报 58 4948]
[2] Thompson S E, Sun G Y, Choi Y S 2006 IEEE Trans.Electron Devices 53 1010
[3] Song J J, Zhang H M, Hu H Y, Dai X Y, Xuan R X 2007 Chin. Phys. 16 3827
[4] Ma J L, Zhang H M, Song J J, Wang G Y, Wang X Y 2011 Acta Phys.Sin. 60 017101 (in Chinese) [马建立, 张鹤鸣, 宋建军, 王冠宇, 王晓艳 2011 物理学报 60 017101]
[5] Rahman M M 2008 International Conference on Solid-State and Integrated-Circuit Technology (ICSICT) p142
[6] Viktor S, Siegfried S 2008 Solid-State Electronics 52 1861
[7] Soline R, Nicolas C 2003 Journal of Applied Physics 94 5088
[8] Dhar S, Ungersbök E, Kosina S, Grasser T, Selberherr S 2007 IEEE Trans.Nano. 6 97
[9] Hensel J C, Hasegawa H, Nakayama M 1965 Physical Review 138 A225
[10] Tan Y H, Li X J, Tian L L, Yu Z P 2008 IEEE Trans.Electron Devices 55 1386
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[1] Zhang Z F, Zhang H M, Hu H Y, Xuan R X, Song J J 2009 Acta Phys. Sin. 58 4948 (in Chinese) [张志锋, 张鹤鸣, 胡辉勇, 宣荣喜, 宋建军 2009 物理学报 58 4948]
[2] Thompson S E, Sun G Y, Choi Y S 2006 IEEE Trans.Electron Devices 53 1010
[3] Song J J, Zhang H M, Hu H Y, Dai X Y, Xuan R X 2007 Chin. Phys. 16 3827
[4] Ma J L, Zhang H M, Song J J, Wang G Y, Wang X Y 2011 Acta Phys.Sin. 60 017101 (in Chinese) [马建立, 张鹤鸣, 宋建军, 王冠宇, 王晓艳 2011 物理学报 60 017101]
[5] Rahman M M 2008 International Conference on Solid-State and Integrated-Circuit Technology (ICSICT) p142
[6] Viktor S, Siegfried S 2008 Solid-State Electronics 52 1861
[7] Soline R, Nicolas C 2003 Journal of Applied Physics 94 5088
[8] Dhar S, Ungersbök E, Kosina S, Grasser T, Selberherr S 2007 IEEE Trans.Nano. 6 97
[9] Hensel J C, Hasegawa H, Nakayama M 1965 Physical Review 138 A225
[10] Tan Y H, Li X J, Tian L L, Yu Z P 2008 IEEE Trans.Electron Devices 55 1386
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