-
[1] Zhang Z, Yu S 2002 Nucl.Eng. Des. 218 249
[2] Ball S J, Morris R N 2008 ORNL/NRC/LTR-07
[3] IAEA-TECDOC-978 1997 International Atomic Energy Agency
[4] Wu Z X, Zhang Z Y 2004 Advanced Nuclear Power System and High-temperature Gas-cooled Reactor (First Edition) (Beijing: Tsinghua University Press) (in Chinese) [吴宗鑫, 张作义 2004 先进核能系统和高温气冷堆 (第1版) (北京: 清华大学出版社)]
[5] Kissane M P 2009 Nucl.Eng. Des. 239 3076
[6] Fang C, Wu G Z 2009 Acta. Phys. Sin. 58 2345 (in Chinese) [房超, 吴国祯 2009 物理学报 58 2345]
[7] Fang C, Sun L F 2011 Chin.Phys. B 20 043301
[8] Liu M, Liu B, Shao Y L, Fang C 2011 At.Energ.Sci. Technol, accepted (in Chinese) [刘马林, 刘兵, 邵友林, 房超 2011 原子能科学技术, 已接受]
[9] Feng Z C 2004 SiC Power Materials: Devices and Applications (Berlin: Springer)
[10] Rohmfeld S, Hundhansen M, Ley L 1998 Phys. Rev. B 58 9858
[11] Nakashima S, Harima H 1997 Phys. Stat. Sol. (a) 162 5
[12] Lysenko V, Barbier D, Champagnon B 2001 Appl. Phys. Lett. 79 2366
[13] Hélary D, Bourrat X, Dugne O, Maveyraud G, Pérez M 2004 Proceedings of 2nd International Topical Meeting on HTR Technology
[14] Windl W, Karch K, Pavone P 1994 Phys. Rev. B 49 8764
[15] Yan Y, Huang F M, Zhang S L, Zhu B F, Shang E Y, Fan S S 2011 Chinese Journal of Semiconductors 22 726 (in Chinese) [阎研, 黄福敏, 张树霖, 朱邦芬, 尚尔轶, 范守善 2001 半导体学报 22 726]
[16] Noda I, Dowrey A E, Marcott C 1988 Appl. Spectrosc. 42 203
[17] Noda I 1989 J. Amer. Chem. Soc. 111 8116
[18] Noda I 1990 Appl. Spectrosc. 44 550
-
[1] Zhang Z, Yu S 2002 Nucl.Eng. Des. 218 249
[2] Ball S J, Morris R N 2008 ORNL/NRC/LTR-07
[3] IAEA-TECDOC-978 1997 International Atomic Energy Agency
[4] Wu Z X, Zhang Z Y 2004 Advanced Nuclear Power System and High-temperature Gas-cooled Reactor (First Edition) (Beijing: Tsinghua University Press) (in Chinese) [吴宗鑫, 张作义 2004 先进核能系统和高温气冷堆 (第1版) (北京: 清华大学出版社)]
[5] Kissane M P 2009 Nucl.Eng. Des. 239 3076
[6] Fang C, Wu G Z 2009 Acta. Phys. Sin. 58 2345 (in Chinese) [房超, 吴国祯 2009 物理学报 58 2345]
[7] Fang C, Sun L F 2011 Chin.Phys. B 20 043301
[8] Liu M, Liu B, Shao Y L, Fang C 2011 At.Energ.Sci. Technol, accepted (in Chinese) [刘马林, 刘兵, 邵友林, 房超 2011 原子能科学技术, 已接受]
[9] Feng Z C 2004 SiC Power Materials: Devices and Applications (Berlin: Springer)
[10] Rohmfeld S, Hundhansen M, Ley L 1998 Phys. Rev. B 58 9858
[11] Nakashima S, Harima H 1997 Phys. Stat. Sol. (a) 162 5
[12] Lysenko V, Barbier D, Champagnon B 2001 Appl. Phys. Lett. 79 2366
[13] Hélary D, Bourrat X, Dugne O, Maveyraud G, Pérez M 2004 Proceedings of 2nd International Topical Meeting on HTR Technology
[14] Windl W, Karch K, Pavone P 1994 Phys. Rev. B 49 8764
[15] Yan Y, Huang F M, Zhang S L, Zhu B F, Shang E Y, Fan S S 2011 Chinese Journal of Semiconductors 22 726 (in Chinese) [阎研, 黄福敏, 张树霖, 朱邦芬, 尚尔轶, 范守善 2001 半导体学报 22 726]
[16] Noda I, Dowrey A E, Marcott C 1988 Appl. Spectrosc. 42 203
[17] Noda I 1989 J. Amer. Chem. Soc. 111 8116
[18] Noda I 1990 Appl. Spectrosc. 44 550
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