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闪锌矿GaN/AlGaN量子点中激子态及光学性质的研究

王艳文 吴花蕊

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闪锌矿GaN/AlGaN量子点中激子态及光学性质的研究

王艳文, 吴花蕊

Exciton states and optical properties in zinc-blende GaN/AlGaN quantum dot

Wang Yan-Wen, Wu Hua-Rui
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  • 在有效质量近似的框架下,运用变分方法研究闪锌矿GaN/AlGaN量子点中的激子态及相关光学性质,探讨电子与空穴在量子点中的三维空间受限和有限势效应.数值计算结果显示,当量子点的尺寸增加时, 量子尺寸效应对电子和空穴的影响减弱,基态激子结合能和带间光跃迁能也都降低;而当该量子点中垒层AlGaN中Al含量增加时,提高了量子点对电子和空穴的束缚作用, 同时基态激子结合能和带间光跃迁能都增加.数值的理论结果与相关实验测量结果一致.
    Within the framework of effective-mass approximation, exciton states confined in zinc-blende GaN/AlGaN quantum dot (QD) are investigated by a variational approach, including the three-dimensional confinement of electron and hole in the QD and the finite band offset. Numerical results show that both the exciton binding energy and the interband emission energy decrease when QD height (or radius) increases. Our theoretical results are in agreement with the experimental measurements.
    • 基金项目: 河南省教育厅2011年度自然科学研究计划项目 (批准号: 2011C140001) 资助的课题.
    • Funds: Project supported by the Natural Science Foundation of Education Bureau of Henan Province, China (Grant No. 2011C140001).
    [1]

    Sakr S, Warde E, Tchernycheva M, Rigutti L, Isac N, Julien F H 2011 Appl. Phys. Lett. 99 142103

    [2]

    Yoshida S, Yokogawa T, Imai Y, Kimura S, Sakata O 2011 Appl. Phys. Lett. 99 131909

    [3]

    Holmes M, Park Y, Wang X, Chan C, Reid B, Kim H, Taylor R, Warner J, Luo J 2011 Appl. Phys. Lett. 98 251908

    [4]

    Widmann F, Simon J, Daudin B, Feuillet G, Rouviére J L, Pelekanos N T, Fishman G 1998 Phys. Rev. B 58 R15989

    [5]

    Simon J, Pelekanos N T, Adelmann C, Martinez-Guerrero E, André R, Daudin B, Dang L S, Mariette H 2003 Phys. Rev. B 68 035312

    [6]

    Schulz S, Schumacher S, Czycholl G 2006 Phys. Rev. B 73 245327

    [7]

    Lei S Y, Shen B, Zhang G Y 2008 Acta Phys. Sin. 57 2386 (in Chinese) [雷双瑛, 沈波, 张国义 2008 物理学报 57 2386]

    [8]

    Novikov S V, Stanton N M, Campion R P, Morris R D, Geen H L, Foxon C T, Kent A J 2008 Semiconductor Sci. Technol. 23 015018

    [9]

    Chichibu S F, Onuma T, Sota T, DenBaars S P, Nakamura S, Kitamura T, Ishida Y, Okumura H 2003 J. Appl. Phys. 93 2051

    [10]

    Garayt J P, Gérard J M, Enjalbert F, Ferlazzo L, Founta S, Martinez-Guerrero E, Rol F, Araujo D, Cox R, Daudin B, Gayral B, Dang L S, Mariette H 2005 Physica E 26 203

    [11]

    Lee J, Spector H N, Chou W C 2005 Phys. Status Solidi B 242 2846

    [12]

    Schulz S, Mourad D, Czycholl G 2009 Phys. Rev. B 80 165405

    [13]

    Chu X L, Zhang Y 2010 J. At. Mol. Phys. 27 173 (in Chinese) [楚兴丽, 张莹 2010 原子与分子物理学报 27 173]

    [14]

    Wei S Y, Zhao X, Wu H R 2006 Chin. J. Liquid Cryst. Displ. 2l 139 (in Chinese) [危书义, 赵旭, 吴花蕊 2006 液晶与显示 2l 139]

    [15]

    Wu H T, Wang H L, Jiang L M 2009 Acta Phys. Sin. 58 465 (in Chinese) [吴慧婷, 王海龙, 姜黎明 2009 物理学报 58 465]

    [16]

    Marquardt O, Mourad D, Schulz S, Hickel T, Czycholl G, Neugebauer J 2008 Phys. Rev. B 78 235302

    [17]

    Shi J, Xia C, Wei S, Liu Z 2005 J. Appl. Phys. 97 083705

    [18]

    Shi J, Gan Z 2003 J. Appl. Phys. 94 407

    [19]

    Wang H, Farias G A, Freire V N 1999 Phys. Rev. B 60 5705

  • [1]

    Sakr S, Warde E, Tchernycheva M, Rigutti L, Isac N, Julien F H 2011 Appl. Phys. Lett. 99 142103

    [2]

    Yoshida S, Yokogawa T, Imai Y, Kimura S, Sakata O 2011 Appl. Phys. Lett. 99 131909

    [3]

    Holmes M, Park Y, Wang X, Chan C, Reid B, Kim H, Taylor R, Warner J, Luo J 2011 Appl. Phys. Lett. 98 251908

    [4]

    Widmann F, Simon J, Daudin B, Feuillet G, Rouviére J L, Pelekanos N T, Fishman G 1998 Phys. Rev. B 58 R15989

    [5]

    Simon J, Pelekanos N T, Adelmann C, Martinez-Guerrero E, André R, Daudin B, Dang L S, Mariette H 2003 Phys. Rev. B 68 035312

    [6]

    Schulz S, Schumacher S, Czycholl G 2006 Phys. Rev. B 73 245327

    [7]

    Lei S Y, Shen B, Zhang G Y 2008 Acta Phys. Sin. 57 2386 (in Chinese) [雷双瑛, 沈波, 张国义 2008 物理学报 57 2386]

    [8]

    Novikov S V, Stanton N M, Campion R P, Morris R D, Geen H L, Foxon C T, Kent A J 2008 Semiconductor Sci. Technol. 23 015018

    [9]

    Chichibu S F, Onuma T, Sota T, DenBaars S P, Nakamura S, Kitamura T, Ishida Y, Okumura H 2003 J. Appl. Phys. 93 2051

    [10]

    Garayt J P, Gérard J M, Enjalbert F, Ferlazzo L, Founta S, Martinez-Guerrero E, Rol F, Araujo D, Cox R, Daudin B, Gayral B, Dang L S, Mariette H 2005 Physica E 26 203

    [11]

    Lee J, Spector H N, Chou W C 2005 Phys. Status Solidi B 242 2846

    [12]

    Schulz S, Mourad D, Czycholl G 2009 Phys. Rev. B 80 165405

    [13]

    Chu X L, Zhang Y 2010 J. At. Mol. Phys. 27 173 (in Chinese) [楚兴丽, 张莹 2010 原子与分子物理学报 27 173]

    [14]

    Wei S Y, Zhao X, Wu H R 2006 Chin. J. Liquid Cryst. Displ. 2l 139 (in Chinese) [危书义, 赵旭, 吴花蕊 2006 液晶与显示 2l 139]

    [15]

    Wu H T, Wang H L, Jiang L M 2009 Acta Phys. Sin. 58 465 (in Chinese) [吴慧婷, 王海龙, 姜黎明 2009 物理学报 58 465]

    [16]

    Marquardt O, Mourad D, Schulz S, Hickel T, Czycholl G, Neugebauer J 2008 Phys. Rev. B 78 235302

    [17]

    Shi J, Xia C, Wei S, Liu Z 2005 J. Appl. Phys. 97 083705

    [18]

    Shi J, Gan Z 2003 J. Appl. Phys. 94 407

    [19]

    Wang H, Farias G A, Freire V N 1999 Phys. Rev. B 60 5705

计量
  • 文章访问数:  6324
  • PDF下载量:  611
  • 被引次数: 0
出版历程
  • 收稿日期:  2011-07-16
  • 修回日期:  2012-05-28
  • 刊出日期:  2012-05-05

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