Poly-Si1-xGex栅应变SiN型金属-氧化物-半导体场效应管栅耗尽模型研究

胡辉勇; 雷帅; 张鹤鸣; 宋建军; 宣荣喜; 舒斌; 王斌

doi:10.7498/aps.61.107301

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摘要

基于对Poly-Si1-xGex栅功函数的分析,通过求解Poisson方程, 获得了Poly-Si1-xGex栅应变Si N型金属-氧化物-半导体场效应器件 (NMOSFET)垂直电势与电场分布模型.在此基础上,建立了考虑栅耗尽的Poly-Si1-xGex栅应变Si NMOSFET的阈值电压模型和栅耗尽宽度及其归一化模型,并利用该模型,对器件几何结构参数、物理参数尤其是Ge组分对Poly-Si1-xGex栅耗尽层宽度的影响, 以及栅耗尽层宽度对器件阈值电压的影响进行了模拟分析.结果表明:多晶耗尽随Ge组分和栅掺杂浓度的增加而减弱, 随衬底掺杂浓度的增加而增强;此外,多晶耗尽程度的增强使得器件阈值电压增大. 所得结论能够为应变Si器件的设计提供理论依据.

关键词:

作者及机构信息

1.
西安电子科技大学微电子学院,宽禁带半导体材料与器件重点实验室, 西安 710071

基金项目: 中央高校基本科研业务费(批准号: 72105499, 72104089)、陕西省自然科学基础研究计划资助项目(批准号: 2010JQ8008) 和预研基金(批准号: 9140C090303110C0904)资助的课题.

参考文献

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[3]	Irisawa T, Numata T, Tezuka T, Usuda K, Sugiyama N, Takagi S I 2008 IEEE Trans. Electron Dev. 55 649
[4]	Song J J, Zhang H M, Hu H Y, Dai X Y, Xuan R X 2010 Acta Phys. Sin. 59 2064 (in Chinese) [宋建军, 张鹤鸣, 胡辉勇, 戴显英, 宣荣喜 2010 物理学报 59 2064]
[5]	Song J J, Zhang H M, Xuan R X, Hu H Y, Dai X Y 2009 Acta Phys. Sin. 58 4958 (in Chinese) [宋建军, 张鹤鸣, 宣荣喜, 胡辉勇, 戴显英 2009 物理学报 58 4958]
[6]	Maiti T K, Banerjee A, Maiti C K 2010 Engineering 2 879
[7]	Song J J, Zhang H M, Hu H Y, Xuan R X, Dai X Y 2010 Atca Phys. Sin. 59 579 (in Chinese) [宋建军, 张鹤鸣, 胡辉勇, 宣荣喜, 戴显英 2010 物理学报 59 579]
[8]	Kang Y, Kim H, Lee J, Son Y, Park B G, Lee J D, Shin H 2009 IEEE Electron Dev. Lett. 30 1371
[9]	Schuegraf K F, King C C, Hu C M 1993 International Symposium on VLSI Technology, Systems, and Applications: Proceeding of Technical Papers, Taipei, May 12-14, 86
[10]	Grados H R J, Manera L T, Wada R, Diniz J A, Doi L, Tatsch P J, Figueroa H E, Swart J W 2010 Japan J. Appl. Phys. 49 04DC04
[11]	Song J J, Zhang H M, Hu H Y, Xuan R X, Dai X Y 2009 Acta Phys. Sin. 58 7947 (in Chinese) [宋建军, 张鹤鸣, 胡辉勇, 宣荣喜, 戴显英 2009 物理学报 58 7947]
[12]	Nayfeh H M, Hoyt J L, Antoniadis D A 2004 IEEE Trans. Electron Dev. 51 2069
[13]	Liu H T, Sin J K O, Xuan P Q, Bokor J 2004 IEEE Trans. Electron Dev. 51 106
[14]	Ponomarev Y V, Stolk P A, Dachs C J J, Montree A H 2000 IEEE Trans. Electron Dev. 47 1507
[15]	Liu E K, Zhu B S, Luo J S 2008 Semiconductor Physics (Beijing: Defense Industry Press) p366 (in Chinese) [刘恩科, 朱秉升, 罗晋生 2008 半导体物理学 (北京:国防工业出版社)]
[16]	Chang T Y, Izabelle A 1989 J. Appl. Phys. 65 2162
[17]	Hellberg P E, Zhang S L, Petersson C S 1997 IEEE Electron Dev. Lett. 18 456
[18]	Gupta A 2003 Investigation of High-Speeed Optoelectronic Receivers in Silicon Germanium (SiGe) (Pittsburgh:University of Pittsburgh)
[19]	Julian E S, Alamsyah A T 2006 the 2nd Information and Communication Technology Seminar, Surabaya, Indonesia, August 29, 132
[20]	Josse E, Skotnicki T 2001 Solid-State Device Research Conference, Crolles, France, September 11-13, 2001 207
[21]	Lee H, Vashaee D, Wang D Z, Dresselhaus M S, Ren Z F, Chen G 2010 J. Appl. Phys. 107 094308
[22]	Goo J S, Xiang Q, Takamura Y, Arasnia F, Paton E N, Besser P, Pan J, Lin M R 2003 IEEE Electron Dev. Lett. 24 568

施引文献

[1]	Hung M F, Wu Y C, Tang Z Y 2011 Appl. Phys. Lett. 98 162108
[2]	Doyle B S, Datta S, Doczy M, Hareland S, Jin B, Kavalieros J, Linton T, Murthy A, Rios R, Chau R 2003 IEEE Electron Dev. Lett. 24 263
[3]	Irisawa T, Numata T, Tezuka T, Usuda K, Sugiyama N, Takagi S I 2008 IEEE Trans. Electron Dev. 55 649
[4]	Song J J, Zhang H M, Hu H Y, Dai X Y, Xuan R X 2010 Acta Phys. Sin. 59 2064 (in Chinese) [宋建军, 张鹤鸣, 胡辉勇, 戴显英, 宣荣喜 2010 物理学报 59 2064]
[5]	Song J J, Zhang H M, Xuan R X, Hu H Y, Dai X Y 2009 Acta Phys. Sin. 58 4958 (in Chinese) [宋建军, 张鹤鸣, 宣荣喜, 胡辉勇, 戴显英 2009 物理学报 58 4958]
[6]	Maiti T K, Banerjee A, Maiti C K 2010 Engineering 2 879
[7]	Song J J, Zhang H M, Hu H Y, Xuan R X, Dai X Y 2010 Atca Phys. Sin. 59 579 (in Chinese) [宋建军, 张鹤鸣, 胡辉勇, 宣荣喜, 戴显英 2010 物理学报 59 579]
[8]	Kang Y, Kim H, Lee J, Son Y, Park B G, Lee J D, Shin H 2009 IEEE Electron Dev. Lett. 30 1371
[9]	Schuegraf K F, King C C, Hu C M 1993 International Symposium on VLSI Technology, Systems, and Applications: Proceeding of Technical Papers, Taipei, May 12-14, 86
[10]	Grados H R J, Manera L T, Wada R, Diniz J A, Doi L, Tatsch P J, Figueroa H E, Swart J W 2010 Japan J. Appl. Phys. 49 04DC04
[11]	Song J J, Zhang H M, Hu H Y, Xuan R X, Dai X Y 2009 Acta Phys. Sin. 58 7947 (in Chinese) [宋建军, 张鹤鸣, 胡辉勇, 宣荣喜, 戴显英 2009 物理学报 58 7947]
[12]	Nayfeh H M, Hoyt J L, Antoniadis D A 2004 IEEE Trans. Electron Dev. 51 2069
[13]	Liu H T, Sin J K O, Xuan P Q, Bokor J 2004 IEEE Trans. Electron Dev. 51 106
[14]	Ponomarev Y V, Stolk P A, Dachs C J J, Montree A H 2000 IEEE Trans. Electron Dev. 47 1507
[15]	Liu E K, Zhu B S, Luo J S 2008 Semiconductor Physics (Beijing: Defense Industry Press) p366 (in Chinese) [刘恩科, 朱秉升, 罗晋生 2008 半导体物理学 (北京:国防工业出版社)]
[16]	Chang T Y, Izabelle A 1989 J. Appl. Phys. 65 2162
[17]	Hellberg P E, Zhang S L, Petersson C S 1997 IEEE Electron Dev. Lett. 18 456
[18]	Gupta A 2003 Investigation of High-Speeed Optoelectronic Receivers in Silicon Germanium (SiGe) (Pittsburgh:University of Pittsburgh)
[19]	Julian E S, Alamsyah A T 2006 the 2nd Information and Communication Technology Seminar, Surabaya, Indonesia, August 29, 132
[20]	Josse E, Skotnicki T 2001 Solid-State Device Research Conference, Crolles, France, September 11-13, 2001 207
[21]	Lee H, Vashaee D, Wang D Z, Dresselhaus M S, Ren Z F, Chen G 2010 J. Appl. Phys. 107 094308
[22]	Goo J S, Xiang Q, Takamura Y, Arasnia F, Paton E N, Besser P, Pan J, Lin M R 2003 IEEE Electron Dev. Lett. 24 568

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Poly-Si1-xGex栅应变SiN型金属-氧化物-半导体场效应管栅耗尽模型研究

1. 西安电子科技大学微电子学院,宽禁带半导体材料与器件重点实验室, 西安 710071

基金项目:

中央高校基本科研业务费(批准号: 72105499, 72104089)、陕西省自然科学基础研究计划资助项目(批准号: 2010JQ8008) 和预研基金(批准号: 9140C090303110C0904)资助的课题.

收稿日期: 2011-07-06

修回日期: 2012-05-28

刊出日期: 2012-05-05

摘要: 基于对Poly-Si1-xGex栅功函数的分析,通过求解Poisson方程, 获得了Poly-Si1-xGex栅应变Si N型金属-氧化物-半导体场效应器件 (NMOSFET)垂直电势与电场分布模型.在此基础上,建立了考虑栅耗尽的Poly-Si1-xGex栅应变Si NMOSFET的阈值电压模型和栅耗尽宽度及其归一化模型,并利用该模型,对器件几何结构参数、物理参数尤其是Ge组分对Poly-Si1-xGex栅耗尽层宽度的影响, 以及栅耗尽层宽度对器件阈值电压的影响进行了模拟分析.结果表明:多晶耗尽随Ge组分和栅掺杂浓度的增加而减弱, 随衬底掺杂浓度的增加而增强;此外,多晶耗尽程度的增强使得器件阈值电压增大. 所得结论能够为应变Si器件的设计提供理论依据.

关键词:

Study of gate depletion effect in strained Si NMOSFET with polycrystalline silicon germanium gate

1.
Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

Fund Project:

Project supported by the Fundamental Research Funds for the Central Universities, China (Grant Nos. 72105499, 72104089), the Natural Science Basic Research Plan in Shaanxi Province of China (Grant No. 2010JQ8008) and the Pre-Research of China (Grant No. 9140C09303110C0904).

Received Date: 06 July 2011

Accepted Date: 28 May 2012

Published Online: 05 May 2012

Abstract: Based on the analysis of Poly-Si1-xGex gate work function and by solving Poisson equation, the models of vertical electric field and potential distribution in strained Si NMOSFET with Poly-Si1-xGex gate are obtained; threshold voltage model and the gate depletion thickness and it's normalization model are established in strained Si NMOSFET based on the above results, with the gate depletion effect of Poly-Si1-xGex taken into account. Then the influences of device geometrical and physical parameters of device especially the Ge fraction on Poly-Si1-xGex gate depletion thickness are investigated. Furthermore, the effect of gate depletion thickness on threshold voltage is analyzed. It shows that the poly depletion thickness decreases with the increases of Ge fraction and gate doping concentration, while it increases with the increase of substrate doping concentration. Furthermore, the threshold voltage increases with the increase of gate depletion thickness. The results can provide theoretical references to the design of strained Si devices.

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