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基于对Poly-Si1-xGex栅功函数的分析,通过求解Poisson方程, 获得了Poly-Si1-xGex栅应变Si N型金属-氧化物-半导体场效应器件 (NMOSFET)垂直电势与电场分布模型.在此基础上,建立了考虑栅耗尽的Poly-Si1-xGex栅应变Si NMOSFET的阈值电压模型和栅耗尽宽度及其归一化模型,并利用该模型,对器件几何结构参数、 物理参数尤其是Ge组分对Poly-Si1-xGex栅耗尽层宽度的影响, 以及栅耗尽层宽度对器件阈值电压的影响进行了模拟分析.结果表明:多晶耗尽随Ge组分和栅掺杂浓度的增加而减弱, 随衬底掺杂浓度的增加而增强;此外,多晶耗尽程度的增强使得器件阈值电压增大. 所得结论能够为应变Si器件的设计提供理论依据.
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关键词:
- Poly-Si1-xGex /
- 应变Si /
- 栅耗尽 /
- 阈值电压
[1] Hung M F, Wu Y C, Tang Z Y 2011 Appl. Phys. Lett. 98 162108
[2] Doyle B S, Datta S, Doczy M, Hareland S, Jin B, Kavalieros J, Linton T, Murthy A, Rios R, Chau R 2003 IEEE Electron Dev. Lett. 24 263
[3] Irisawa T, Numata T, Tezuka T, Usuda K, Sugiyama N, Takagi S I 2008 IEEE Trans. Electron Dev. 55 649
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[8] Kang Y, Kim H, Lee J, Son Y, Park B G, Lee J D, Shin H 2009 IEEE Electron Dev. Lett. 30 1371
[9] Schuegraf K F, King C C, Hu C M 1993 International Symposium on VLSI Technology, Systems, and Applications: Proceeding of Technical Papers, Taipei, May 12-14, 86
[10] Grados H R J, Manera L T, Wada R, Diniz J A, Doi L, Tatsch P J, Figueroa H E, Swart J W 2010 Japan J. Appl. Phys. 49 04DC04
[11] Song J J, Zhang H M, Hu H Y, Xuan R X, Dai X Y 2009 Acta Phys. Sin. 58 7947 (in Chinese) [宋建军, 张鹤鸣, 胡辉勇, 宣荣喜, 戴显英 2009 物理学报 58 7947]
[12] Nayfeh H M, Hoyt J L, Antoniadis D A 2004 IEEE Trans. Electron Dev. 51 2069
[13] Liu H T, Sin J K O, Xuan P Q, Bokor J 2004 IEEE Trans. Electron Dev. 51 106
[14] Ponomarev Y V, Stolk P A, Dachs C J J, Montree A H 2000 IEEE Trans. Electron Dev. 47 1507
[15] Liu E K, Zhu B S, Luo J S 2008 Semiconductor Physics (Beijing: Defense Industry Press) p366 (in Chinese) [刘恩科, 朱秉升, 罗晋生 2008 半导体物理学 (北京:国防工业出版社)]
[16] Chang T Y, Izabelle A 1989 J. Appl. Phys. 65 2162
[17] Hellberg P E, Zhang S L, Petersson C S 1997 IEEE Electron Dev. Lett. 18 456
[18] Gupta A 2003 Investigation of High-Speeed Optoelectronic Receivers in Silicon Germanium (SiGe) (Pittsburgh:University of Pittsburgh)
[19] Julian E S, Alamsyah A T 2006 the 2nd Information and Communication Technology Seminar, Surabaya, Indonesia, August 29, 132
[20] Josse E, Skotnicki T 2001 Solid-State Device Research Conference, Crolles, France, September 11-13, 2001 207
[21] Lee H, Vashaee D, Wang D Z, Dresselhaus M S, Ren Z F, Chen G 2010 J. Appl. Phys. 107 094308
[22] Goo J S, Xiang Q, Takamura Y, Arasnia F, Paton E N, Besser P, Pan J, Lin M R 2003 IEEE Electron Dev. Lett. 24 568
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[1] Hung M F, Wu Y C, Tang Z Y 2011 Appl. Phys. Lett. 98 162108
[2] Doyle B S, Datta S, Doczy M, Hareland S, Jin B, Kavalieros J, Linton T, Murthy A, Rios R, Chau R 2003 IEEE Electron Dev. Lett. 24 263
[3] Irisawa T, Numata T, Tezuka T, Usuda K, Sugiyama N, Takagi S I 2008 IEEE Trans. Electron Dev. 55 649
[4] Song J J, Zhang H M, Hu H Y, Dai X Y, Xuan R X 2010 Acta Phys. Sin. 59 2064 (in Chinese) [宋建军, 张鹤鸣, 胡辉勇, 戴显英, 宣荣喜 2010 物理学报 59 2064]
[5] Song J J, Zhang H M, Xuan R X, Hu H Y, Dai X Y 2009 Acta Phys. Sin. 58 4958 (in Chinese) [宋建军, 张鹤鸣, 宣荣喜, 胡辉勇, 戴显英 2009 物理学报 58 4958]
[6] Maiti T K, Banerjee A, Maiti C K 2010 Engineering 2 879
[7] Song J J, Zhang H M, Hu H Y, Xuan R X, Dai X Y 2010 Atca Phys. Sin. 59 579 (in Chinese) [宋建军, 张鹤鸣, 胡辉勇, 宣荣喜, 戴显英 2010 物理学报 59 579]
[8] Kang Y, Kim H, Lee J, Son Y, Park B G, Lee J D, Shin H 2009 IEEE Electron Dev. Lett. 30 1371
[9] Schuegraf K F, King C C, Hu C M 1993 International Symposium on VLSI Technology, Systems, and Applications: Proceeding of Technical Papers, Taipei, May 12-14, 86
[10] Grados H R J, Manera L T, Wada R, Diniz J A, Doi L, Tatsch P J, Figueroa H E, Swart J W 2010 Japan J. Appl. Phys. 49 04DC04
[11] Song J J, Zhang H M, Hu H Y, Xuan R X, Dai X Y 2009 Acta Phys. Sin. 58 7947 (in Chinese) [宋建军, 张鹤鸣, 胡辉勇, 宣荣喜, 戴显英 2009 物理学报 58 7947]
[12] Nayfeh H M, Hoyt J L, Antoniadis D A 2004 IEEE Trans. Electron Dev. 51 2069
[13] Liu H T, Sin J K O, Xuan P Q, Bokor J 2004 IEEE Trans. Electron Dev. 51 106
[14] Ponomarev Y V, Stolk P A, Dachs C J J, Montree A H 2000 IEEE Trans. Electron Dev. 47 1507
[15] Liu E K, Zhu B S, Luo J S 2008 Semiconductor Physics (Beijing: Defense Industry Press) p366 (in Chinese) [刘恩科, 朱秉升, 罗晋生 2008 半导体物理学 (北京:国防工业出版社)]
[16] Chang T Y, Izabelle A 1989 J. Appl. Phys. 65 2162
[17] Hellberg P E, Zhang S L, Petersson C S 1997 IEEE Electron Dev. Lett. 18 456
[18] Gupta A 2003 Investigation of High-Speeed Optoelectronic Receivers in Silicon Germanium (SiGe) (Pittsburgh:University of Pittsburgh)
[19] Julian E S, Alamsyah A T 2006 the 2nd Information and Communication Technology Seminar, Surabaya, Indonesia, August 29, 132
[20] Josse E, Skotnicki T 2001 Solid-State Device Research Conference, Crolles, France, September 11-13, 2001 207
[21] Lee H, Vashaee D, Wang D Z, Dresselhaus M S, Ren Z F, Chen G 2010 J. Appl. Phys. 107 094308
[22] Goo J S, Xiang Q, Takamura Y, Arasnia F, Paton E N, Besser P, Pan J, Lin M R 2003 IEEE Electron Dev. Lett. 24 568
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