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在利用kp微扰理论获得应变Ge/Si1-xGex价带E(k)-k关系的基础上, 研究得到了(001), (101), (111)面应变Ge/Si1-xGex沿不同晶向及各向同性的价带空穴有效质量. 结果显示, 应变Ge/Si1-xGex沿各晶向的带边有效质量随应力增大而减小, 且沿[010]晶向最小; 子带空穴有效质量在应力较大时变化不明显, 并且在数值上与带边空穴有效质量相差不大. 最后利用各向同性有效质量与文献结果进行比对, 验证了结果的正确性.
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关键词:
- 应变Ge/Si1-xGex /
- 空穴有效质量 /
- 价带结构各向异性与各向同性
In this paper, the hole effective mass along arbitrarily k wavevector direction and the hole isotropic effective masses in strained Ge/(001)(101)(111)Si1-xGex are obtained with in the frame work of kp theory. It is found that the hole effective mass of the top valence band along [010] wave vector decreases obviously with stress increasing and its absolute value is smallest. The hole effective mass of the second valence band tends to gently decrease with stress increasing, and is not significant in magnitude. Compared with the existing isotropic effective quality, the result obtained in this paper is proved to be correct.[1] Bedell S W, Daval N, Khakifirooz A 2011 Microelectron 88 324
[2] Yang Y J, Ho W S, Huang C F 2007 Appl. Phys. Lett. 91 102103
[3] Claeys C, Simoen E (Translated by Tu H L et al.) 2010 Semiconductor Ge Material and Devices (Beijing: Metallurgical Industry Press) p326 [克莱 C, 西蒙 E著 (屠海令等译) 2010 半导体锗材料与器件 (北京: 冶金工业出版社) 第326页]
[4] Lee M L, Leitz C W, Cheng Z, Pitera A J, Langdo T, Currie M T, Taraschi G, Fitzgerald E A, Antoniadis D A 2001 Appl. Phys. Lett. 79 3344
[5] Shang H, Chu J Q, Wang X, Mooney P M, Lee K, Ott J, Rim K, Chan K, Guarini K, Ieong M 2004 VLSI Symp. Tech. Dig. p204
[6] International Technology Working Group (Translated by Wei G) 2010 China Integrated Circult 131 17 (in Chinese) [国际技术工作组(为国译) 2010 中国集成电路 131 17]
[7] Song J J, Zhang H M, Dai X Y, Hu H Y, Xuan R X 2008 Acta Phys. Sin. 57 5918 (in Chinese) [宋建军, 张鹤鸣, 戴显英, 胡辉勇, 宣荣喜 2008 物理学报 57 5918]
[8] Fischetti M V, Laux S E 1996 J. Appl. Phys. 80 2234
[9] Liu E K, Zhu B S, Luo J S 2003 Semiconductor Physics (6th Ed.) (Beijing: Publishing House of Electronics Industry) pp18-23 [刘恩科,朱秉升, 罗晋生 2003 半导体物理学(第6版) (北京:电子工业出版社) 第18—23页]
[10] Dai X Y, Yang C, Song J J, Zhang H M, Hao Y, Zheng R C 2012 Acta Phys. Sin. 61 137103 (in Chinese) [戴显英,杨程,宋建军,张鹤鸣,郝跃,郑若川 2012 物理学报 61 137103]
[11] Li M F 1998 Semiconductor Physics (Beijing: Science Press) p64 [李名复 1998 半导体物理学 (北京:科学出版社) 第64页]
[12] Kasper E (Translated by Yu J Z) 2002 Properties of Strained and Relaxed Silicon Germanium (Beijing: National Defence Industrial Press) [Erich Kasper (余金中译) 2002 硅锗的性质 (北京: 国防工业出版社)]
[13] Gu Z Y, Tian L L, Fu L W 1995 Semiconductor Physics (Beijing: Electronics Industry Press) (in Chinese) p46 [顾祖毅, 田立林, 富力文 1995 半导体物理学(北京: 电子工业出版社) 第46页]
[14] Lee Minjoo L, Fitzgerald Eugene A 2003 Appl. Phys. Lett. 83 4202
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[1] Bedell S W, Daval N, Khakifirooz A 2011 Microelectron 88 324
[2] Yang Y J, Ho W S, Huang C F 2007 Appl. Phys. Lett. 91 102103
[3] Claeys C, Simoen E (Translated by Tu H L et al.) 2010 Semiconductor Ge Material and Devices (Beijing: Metallurgical Industry Press) p326 [克莱 C, 西蒙 E著 (屠海令等译) 2010 半导体锗材料与器件 (北京: 冶金工业出版社) 第326页]
[4] Lee M L, Leitz C W, Cheng Z, Pitera A J, Langdo T, Currie M T, Taraschi G, Fitzgerald E A, Antoniadis D A 2001 Appl. Phys. Lett. 79 3344
[5] Shang H, Chu J Q, Wang X, Mooney P M, Lee K, Ott J, Rim K, Chan K, Guarini K, Ieong M 2004 VLSI Symp. Tech. Dig. p204
[6] International Technology Working Group (Translated by Wei G) 2010 China Integrated Circult 131 17 (in Chinese) [国际技术工作组(为国译) 2010 中国集成电路 131 17]
[7] Song J J, Zhang H M, Dai X Y, Hu H Y, Xuan R X 2008 Acta Phys. Sin. 57 5918 (in Chinese) [宋建军, 张鹤鸣, 戴显英, 胡辉勇, 宣荣喜 2008 物理学报 57 5918]
[8] Fischetti M V, Laux S E 1996 J. Appl. Phys. 80 2234
[9] Liu E K, Zhu B S, Luo J S 2003 Semiconductor Physics (6th Ed.) (Beijing: Publishing House of Electronics Industry) pp18-23 [刘恩科,朱秉升, 罗晋生 2003 半导体物理学(第6版) (北京:电子工业出版社) 第18—23页]
[10] Dai X Y, Yang C, Song J J, Zhang H M, Hao Y, Zheng R C 2012 Acta Phys. Sin. 61 137103 (in Chinese) [戴显英,杨程,宋建军,张鹤鸣,郝跃,郑若川 2012 物理学报 61 137103]
[11] Li M F 1998 Semiconductor Physics (Beijing: Science Press) p64 [李名复 1998 半导体物理学 (北京:科学出版社) 第64页]
[12] Kasper E (Translated by Yu J Z) 2002 Properties of Strained and Relaxed Silicon Germanium (Beijing: National Defence Industrial Press) [Erich Kasper (余金中译) 2002 硅锗的性质 (北京: 国防工业出版社)]
[13] Gu Z Y, Tian L L, Fu L W 1995 Semiconductor Physics (Beijing: Electronics Industry Press) (in Chinese) p46 [顾祖毅, 田立林, 富力文 1995 半导体物理学(北京: 电子工业出版社) 第46页]
[14] Lee Minjoo L, Fitzgerald Eugene A 2003 Appl. Phys. Lett. 83 4202
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