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在利用kp微扰理论获得应变Ge/Si1-xGex价带E(k)-k关系的基础上, 研究得到了(001), (101), (111)面应变Ge/Si1-xGex沿不同晶向及各向同性的价带空穴有效质量. 结果显示, 应变Ge/Si1-xGex沿各晶向的带边有效质量随应力增大而减小, 且沿[010]晶向最小; 子带空穴有效质量在应力较大时变化不明显, 并且在数值上与带边空穴有效质量相差不大. 最后利用各向同性有效质量与文献结果进行比对, 验证了结果的正确性.
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关键词:
- 应变Ge/Si1-xGex /
- 空穴有效质量 /
- 价带结构各向异性与各向同性
[1] Bedell S W, Daval N, Khakifirooz A 2011 Microelectron 88 324
[2] Yang Y J, Ho W S, Huang C F 2007 Appl. Phys. Lett. 91 102103
[3] Claeys C, Simoen E (Translated by Tu H L et al.) 2010 Semiconductor Ge Material and Devices (Beijing: Metallurgical Industry Press) p326 [克莱 C, 西蒙 E著 (屠海令等译) 2010 半导体锗材料与器件 (北京: 冶金工业出版社) 第326页]
[4] Lee M L, Leitz C W, Cheng Z, Pitera A J, Langdo T, Currie M T, Taraschi G, Fitzgerald E A, Antoniadis D A 2001 Appl. Phys. Lett. 79 3344
[5] Shang H, Chu J Q, Wang X, Mooney P M, Lee K, Ott J, Rim K, Chan K, Guarini K, Ieong M 2004 VLSI Symp. Tech. Dig. p204
[6] International Technology Working Group (Translated by Wei G) 2010 China Integrated Circult 131 17 (in Chinese) [国际技术工作组(为国译) 2010 中国集成电路 131 17]
[7] Song J J, Zhang H M, Dai X Y, Hu H Y, Xuan R X 2008 Acta Phys. Sin. 57 5918 (in Chinese) [宋建军, 张鹤鸣, 戴显英, 胡辉勇, 宣荣喜 2008 物理学报 57 5918]
[8] Fischetti M V, Laux S E 1996 J. Appl. Phys. 80 2234
[9] Liu E K, Zhu B S, Luo J S 2003 Semiconductor Physics (6th Ed.) (Beijing: Publishing House of Electronics Industry) pp18-23 [刘恩科,朱秉升, 罗晋生 2003 半导体物理学(第6版) (北京:电子工业出版社) 第18—23页]
[10] Dai X Y, Yang C, Song J J, Zhang H M, Hao Y, Zheng R C 2012 Acta Phys. Sin. 61 137103 (in Chinese) [戴显英,杨程,宋建军,张鹤鸣,郝跃,郑若川 2012 物理学报 61 137103]
[11] Li M F 1998 Semiconductor Physics (Beijing: Science Press) p64 [李名复 1998 半导体物理学 (北京:科学出版社) 第64页]
[12] Kasper E (Translated by Yu J Z) 2002 Properties of Strained and Relaxed Silicon Germanium (Beijing: National Defence Industrial Press) [Erich Kasper (余金中译) 2002 硅锗的性质 (北京: 国防工业出版社)]
[13] Gu Z Y, Tian L L, Fu L W 1995 Semiconductor Physics (Beijing: Electronics Industry Press) (in Chinese) p46 [顾祖毅, 田立林, 富力文 1995 半导体物理学(北京: 电子工业出版社) 第46页]
[14] Lee Minjoo L, Fitzgerald Eugene A 2003 Appl. Phys. Lett. 83 4202
-
[1] Bedell S W, Daval N, Khakifirooz A 2011 Microelectron 88 324
[2] Yang Y J, Ho W S, Huang C F 2007 Appl. Phys. Lett. 91 102103
[3] Claeys C, Simoen E (Translated by Tu H L et al.) 2010 Semiconductor Ge Material and Devices (Beijing: Metallurgical Industry Press) p326 [克莱 C, 西蒙 E著 (屠海令等译) 2010 半导体锗材料与器件 (北京: 冶金工业出版社) 第326页]
[4] Lee M L, Leitz C W, Cheng Z, Pitera A J, Langdo T, Currie M T, Taraschi G, Fitzgerald E A, Antoniadis D A 2001 Appl. Phys. Lett. 79 3344
[5] Shang H, Chu J Q, Wang X, Mooney P M, Lee K, Ott J, Rim K, Chan K, Guarini K, Ieong M 2004 VLSI Symp. Tech. Dig. p204
[6] International Technology Working Group (Translated by Wei G) 2010 China Integrated Circult 131 17 (in Chinese) [国际技术工作组(为国译) 2010 中国集成电路 131 17]
[7] Song J J, Zhang H M, Dai X Y, Hu H Y, Xuan R X 2008 Acta Phys. Sin. 57 5918 (in Chinese) [宋建军, 张鹤鸣, 戴显英, 胡辉勇, 宣荣喜 2008 物理学报 57 5918]
[8] Fischetti M V, Laux S E 1996 J. Appl. Phys. 80 2234
[9] Liu E K, Zhu B S, Luo J S 2003 Semiconductor Physics (6th Ed.) (Beijing: Publishing House of Electronics Industry) pp18-23 [刘恩科,朱秉升, 罗晋生 2003 半导体物理学(第6版) (北京:电子工业出版社) 第18—23页]
[10] Dai X Y, Yang C, Song J J, Zhang H M, Hao Y, Zheng R C 2012 Acta Phys. Sin. 61 137103 (in Chinese) [戴显英,杨程,宋建军,张鹤鸣,郝跃,郑若川 2012 物理学报 61 137103]
[11] Li M F 1998 Semiconductor Physics (Beijing: Science Press) p64 [李名复 1998 半导体物理学 (北京:科学出版社) 第64页]
[12] Kasper E (Translated by Yu J Z) 2002 Properties of Strained and Relaxed Silicon Germanium (Beijing: National Defence Industrial Press) [Erich Kasper (余金中译) 2002 硅锗的性质 (北京: 国防工业出版社)]
[13] Gu Z Y, Tian L L, Fu L W 1995 Semiconductor Physics (Beijing: Electronics Industry Press) (in Chinese) p46 [顾祖毅, 田立林, 富力文 1995 半导体物理学(北京: 电子工业出版社) 第46页]
[14] Lee Minjoo L, Fitzgerald Eugene A 2003 Appl. Phys. Lett. 83 4202
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