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研究了磁场诱导生长的BiFeO3/Ni18Fe19磁性双层膜中 的交换偏置及其热稳定性. 结果表明: BiFeO3/Ni18Fe19双层膜中的交换偏置场Hex未表现出明显的磁练习效应. 在负饱和磁场等待过程中, BiFeO3/Ni18Fe19双层膜磁滞回线的前支和后支曲 线都随着在负饱和磁场中等待时间tsat的增加向正场方向偏移. 交换偏置场Hex的大小随着等待时间tsat的增加而减小, 矫顽力Hc基本不变. 交换偏置场Hex的大小随测量温度Tm的升高变化不明显, 表现出良好的热稳定性; 但矫顽力Hc随Tm的升高而显著减小. 良好的热稳定性应该来源于铁电性和反铁磁性间的共同耦合作用.
[1] Meiklejohn W H, Bean C P 1956 Phys. Rev. 102 1413
[2] Malozemoff A P 1987 Phys. Rev. B 35 3679
[3] Fernandez-Outon L E, Vallejo-Fernandez G, Manzoor S, Hillebrands B, O'Grady K 2008 J. Appl. Phys. 104 093907
[4] Lenssen K M H, vanKesteren H W, Rijks T, Kools J C S, deNooijer M C, Coehoorn R, Folkerts W 1997 Sensor. Actuat. A 60 90
[5] Coehoorn R, Kools J C S, Rijks T, Lenssen K M H 1998 Philips J. Res. 51 93
[6] Lee K, Kang S H 2010 IEEE Trans. Magn. 46 1537
[7] Cao J, Freitas P P 2010 J. Appl. Phys. 107 09E712
[8] Wu J G, Wang J 2010 J. Alloy. Compd. 507 L4
[9] Matsuda M, Fishman R S, Hong T, Lee C H, Ushiyama T, Yanagisawa Y, Tomioka Y, Ito T 2012 Phys. Rev. Lett. 109 067205
[10] Fiebig M, Lottermoser T, Frohlich D, Goltsev A V, Pisarev R V 2002 Nature 419 818
[11] Wang J, Neaton J B, Zheng H, Nagarajan V, Ogale S B, Liu B, Viehland D, Vaithyanathan V, Schlom D G, Waghmare U V, Spaldin N A, Rabe K M, Wuttig M, Ramesh R 2003 Science 299 1719
[12] Chai C L, Teng J, Yu G H, Zhu F W, Lai W Y, Xiao J M 2002 Acta Phys. Sin. 51 1846 (in Chinese) [柴春林, 滕蛟, 于广华, 朱逢吾, 赖武彦, 肖纪美 2002 物理学报 51 1846]
[13] Zhou G H, Wang Y G, Qi X J 2009 Chin. Phys. Lett. 26 037501
[14] Li F F, Sharif R, Jiang L X, Zhang X Q, Han X F, Wang Y, Zhang Z 2005 J. Appl. Phys. 98 113710
[15] Li Y F, Xiao J Q, Dimitrov D V 2002 J. Appl. Phys. 91 7227
[16] Tang X, Dai J, Zhu X, Song W, Sun Y 2011 J. Alloy. Compd. 509 4748
[17] Wu J, Wang J 2010 J. Am. Ceram. Soc. 93 1422
[18] Binek C, Polisetty S, He X, Berger A 2006 Phys. Rev. Lett. 96 067201
[19] Xi H, Franzen S, Mao S, White R M 2007 Phys. Rev. B 75 014434
[20] Zhou G H, Wang Y G, Qi X J, Li Z Q, Chen J K 2009 Chin. Phys. B 18 790
[21] Han D H, Gao Z, Mao S I, Ding J R 2000 J. Appl. Phys. 87 6424
[22] Nishioka K 1999 J. Appl. Phys. 86 6305
[23] Zeches R J, Rossell M D, Zhang J X, Hatt A J, He Q, Yang C H, Kumar A, Wang C H, Melville A, Adamo C, Sheng G, Chu Y H, Ihlefeld J F, Erni R, Ederer C, Gopalan V, Chen L Q, Schlom D G, Spaldin N A, Martin L W, Ramesh R 2009 Science 326 977
[24] Yuan X, Xue X, Zhang X, Wen Z, Yang M, Du J, Wu D, Xu Q 2012 Solid State Commun. 152 241
[25] Zavaliche F, Zheng H, Mohaddes-Ardabili L, Yang S Y, Zhan Q, Shafer P, Reilly E, Chopdekar R, Jia Y, Wright P, Schlom D G, Suzuki Y, Ramesh R 2005 Nano Lett. 5 1793
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[1] Meiklejohn W H, Bean C P 1956 Phys. Rev. 102 1413
[2] Malozemoff A P 1987 Phys. Rev. B 35 3679
[3] Fernandez-Outon L E, Vallejo-Fernandez G, Manzoor S, Hillebrands B, O'Grady K 2008 J. Appl. Phys. 104 093907
[4] Lenssen K M H, vanKesteren H W, Rijks T, Kools J C S, deNooijer M C, Coehoorn R, Folkerts W 1997 Sensor. Actuat. A 60 90
[5] Coehoorn R, Kools J C S, Rijks T, Lenssen K M H 1998 Philips J. Res. 51 93
[6] Lee K, Kang S H 2010 IEEE Trans. Magn. 46 1537
[7] Cao J, Freitas P P 2010 J. Appl. Phys. 107 09E712
[8] Wu J G, Wang J 2010 J. Alloy. Compd. 507 L4
[9] Matsuda M, Fishman R S, Hong T, Lee C H, Ushiyama T, Yanagisawa Y, Tomioka Y, Ito T 2012 Phys. Rev. Lett. 109 067205
[10] Fiebig M, Lottermoser T, Frohlich D, Goltsev A V, Pisarev R V 2002 Nature 419 818
[11] Wang J, Neaton J B, Zheng H, Nagarajan V, Ogale S B, Liu B, Viehland D, Vaithyanathan V, Schlom D G, Waghmare U V, Spaldin N A, Rabe K M, Wuttig M, Ramesh R 2003 Science 299 1719
[12] Chai C L, Teng J, Yu G H, Zhu F W, Lai W Y, Xiao J M 2002 Acta Phys. Sin. 51 1846 (in Chinese) [柴春林, 滕蛟, 于广华, 朱逢吾, 赖武彦, 肖纪美 2002 物理学报 51 1846]
[13] Zhou G H, Wang Y G, Qi X J 2009 Chin. Phys. Lett. 26 037501
[14] Li F F, Sharif R, Jiang L X, Zhang X Q, Han X F, Wang Y, Zhang Z 2005 J. Appl. Phys. 98 113710
[15] Li Y F, Xiao J Q, Dimitrov D V 2002 J. Appl. Phys. 91 7227
[16] Tang X, Dai J, Zhu X, Song W, Sun Y 2011 J. Alloy. Compd. 509 4748
[17] Wu J, Wang J 2010 J. Am. Ceram. Soc. 93 1422
[18] Binek C, Polisetty S, He X, Berger A 2006 Phys. Rev. Lett. 96 067201
[19] Xi H, Franzen S, Mao S, White R M 2007 Phys. Rev. B 75 014434
[20] Zhou G H, Wang Y G, Qi X J, Li Z Q, Chen J K 2009 Chin. Phys. B 18 790
[21] Han D H, Gao Z, Mao S I, Ding J R 2000 J. Appl. Phys. 87 6424
[22] Nishioka K 1999 J. Appl. Phys. 86 6305
[23] Zeches R J, Rossell M D, Zhang J X, Hatt A J, He Q, Yang C H, Kumar A, Wang C H, Melville A, Adamo C, Sheng G, Chu Y H, Ihlefeld J F, Erni R, Ederer C, Gopalan V, Chen L Q, Schlom D G, Spaldin N A, Martin L W, Ramesh R 2009 Science 326 977
[24] Yuan X, Xue X, Zhang X, Wen Z, Yang M, Du J, Wu D, Xu Q 2012 Solid State Commun. 152 241
[25] Zavaliche F, Zheng H, Mohaddes-Ardabili L, Yang S Y, Zhan Q, Shafer P, Reilly E, Chopdekar R, Jia Y, Wright P, Schlom D G, Suzuki Y, Ramesh R 2005 Nano Lett. 5 1793
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