The influences of oxygen ion dose and annealing temperature on the microstructural and photoelectrical properties of microcrystalline diamond films with Si-V luminescence centers were systematically investigated. Results show that high temperature annealing prefers to increase the Si-V luminescence intensity in oxygen-ion-implanted microcrystalline diamond films. With oxygen ion dose increasing from 1014 to 1015 cm-2, the Si-V luminescence intensity of the films enhances. Hall effects measurement show that the resistivity of the films becomes lower after annealing. At different annealing temperatures, the oxygen-ion-implanted microcrystalline diamond films with stronger Si-V luminescence intensity exhibit larger resistivity, indicating that the Si-V luminescence centers are not favorable to the enhance ment of the conductivity of films. Results of Raman spectroscopy show that the increase of defects in films will enhance Si-V luminescence intensity and decrease the conductivity of the films.