90 nm互补金属氧化物半导体静态随机存储器局部单粒子闩锁传播效应诱发多位翻转的机理

陈睿; 余永涛; 上官士鹏; 封国强; 韩建伟

doi:10.7498/aps.63.128501

摘要

基于单粒子效应脉冲激光实验装置，开展了90 nm互补金属氧化物半导体静态随机存储器的单粒子翻转和闩锁效应实验，并给出了器件单粒子翻转效应位图. 实验发现，器件出现了大量的多位翻转和约20 mA的电源电流脉冲. 借助器件仿真工具，揭示了器件发生单粒子多位翻转效应的原因. 结果表明，器件局部阵列发生单粒子闩锁效应并传播到多个位单元是诱发多位翻转的主要原因. 通过对比分析脉冲激光和器件仿真实验结果，发现P/N阱电势塌陷是导致90 nm互补金属氧化物半导体静态随机存储器出现单粒子闩锁传播效应的内在物理机制.

关键词:

Abstract

By using the pulsed laser single effect facility, the single event upset and latch-up phenomenon are studied, and the bitmap of 90 nm complementary metal oxide semiconductor (CMOS) static random-access memory (SRAM) is mapped. It is shown that many multiple bit upsets occur and pulsed supply current of 20 mA amplitude is monitored. Based on the technology computer aided design (TCAD), it is found that the localized latch-up in CMOS SRAM is the main reason for the single event multiple bit upsets. Finally, by analyzing the results of the pulsed laser experiment and TCAD, it is found that the P/N well potential collapse is the key physical mechanism responsible for the spreading of the single event latch-up effect in 90 nm CMOS SRAM.

Keywords:

作者及机构信息

1.
中国科学院国家空间科学中心, 北京 100190;

2.
中国科学院大学, 北京 100049

基金项目: 国家自然科学基金（批准号：41304148）和中国科学院知识创新工程青年基金（批准号：O82111A17S）资助的课题.

Authors and contacts

1.
National Space Science Center, Chinese Academy of Sciences, Beijing 100190, China;

2.
University of Chinese Academy of Sciences, Beijing 100049, China

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 41304148) and the Main Direction Program of Knowledge Innovation of Chinese Academy of Sciences (Grant No. O82111A17S).

参考文献

[1]	Dodds N A, Hppten N C, Reed R A 2012 IEEE Trans. Nucl. Sci. 59 2642
[2]	Voldman S H, Gebreselasie E, Zierak M, Hershberger D, Collins D, Feilchenfeld N, Onge St S, Dunn J 2005 Proceedings of the 43th Annual International Reliability Physics Symposium San Jose, USA, April 17-21, 2005 p129
[3]	Hargrove M J, Voldman S H, Gauthier R, Brown I, Duncan K, Craig W 1998 Proceedings of the 36th Annual International Reliability Physics Symposium Reno NV, USA, March 31-April 2, 1998 p269
[4]	Sukhaseum N, Samaras A, Du D L, Vandevelde B, Chatry N, Bezerra F 2012 Proceedings of the 13th European Conference on Radiation and Its Effects on Components and Systems Biarritz, France, September 24-28, 2012
[5]	Luo Y H, Zhang F Q, Guo H X, Hajdas W, Zhou H 2013 Proceedings of the 14th European Conference on Radiation and Its Effects on Components and Systems Oxford, UK, September 23-27, 2013
[6]	Han J W, Zhang Z L, Feng G Q, Ma Y Q 2009 Spacecraft Environment Engineering 26 125 (in Chinese) [韩建伟, 张振龙, 封国强, 马英起 2009 航天器环境工程 26 125]
[7]	Zhang K Y, Guo H X, Luo Y H, He B P, Yao Z B, Zhang F Q, Wang Y M 2009 Acta Phys. Sin. 58 8651 (in Chinese) [张科营, 郭红霞, 罗尹红, 何宝平, 姚志斌, 张凤祁, 王园明 2009 物理学报 58 8651]
[8]	Chen J J, Chen S M, Liang B, Deng K F 2012 Chin. Phys. B 21 016103
[9]	Iwata H, Ohzone T 1995 IEEE Trans. Nucl. Sci. 42 148
[10]	Nelson J G, Arthur F W, Nicholas M A, Jonathan R A 2011 IEEE Trans. Nucl. Sci. 58 2614
[11]	Dodds N A, Hutson J M, Pellish J A, Reed R A, Kim H S, Berg M D, Friendlich M R, Phan A M, Seidleck C M, Xapsos M A, Deng X, Baumann R C, Schrimpf R D, King M P, Massengil L W, Weller R A 2010 IEEE Trans. Nucl. Sci. 57 3575
[12]	Morris W 2003 Proceedings of the 41th Annual International Reliability Physics Symposium Dallas, Texas, March 30-April 4, 2003 p76

施引文献

[1]	Dodds N A, Hppten N C, Reed R A 2012 IEEE Trans. Nucl. Sci. 59 2642
[2]	Voldman S H, Gebreselasie E, Zierak M, Hershberger D, Collins D, Feilchenfeld N, Onge St S, Dunn J 2005 Proceedings of the 43th Annual International Reliability Physics Symposium San Jose, USA, April 17-21, 2005 p129
[3]	Hargrove M J, Voldman S H, Gauthier R, Brown I, Duncan K, Craig W 1998 Proceedings of the 36th Annual International Reliability Physics Symposium Reno NV, USA, March 31-April 2, 1998 p269
[4]	Sukhaseum N, Samaras A, Du D L, Vandevelde B, Chatry N, Bezerra F 2012 Proceedings of the 13th European Conference on Radiation and Its Effects on Components and Systems Biarritz, France, September 24-28, 2012
[5]	Luo Y H, Zhang F Q, Guo H X, Hajdas W, Zhou H 2013 Proceedings of the 14th European Conference on Radiation and Its Effects on Components and Systems Oxford, UK, September 23-27, 2013
[6]	Han J W, Zhang Z L, Feng G Q, Ma Y Q 2009 Spacecraft Environment Engineering 26 125 (in Chinese) [韩建伟, 张振龙, 封国强, 马英起 2009 航天器环境工程 26 125]
[7]	Zhang K Y, Guo H X, Luo Y H, He B P, Yao Z B, Zhang F Q, Wang Y M 2009 Acta Phys. Sin. 58 8651 (in Chinese) [张科营, 郭红霞, 罗尹红, 何宝平, 姚志斌, 张凤祁, 王园明 2009 物理学报 58 8651]
[8]	Chen J J, Chen S M, Liang B, Deng K F 2012 Chin. Phys. B 21 016103
[9]	Iwata H, Ohzone T 1995 IEEE Trans. Nucl. Sci. 42 148
[10]	Nelson J G, Arthur F W, Nicholas M A, Jonathan R A 2011 IEEE Trans. Nucl. Sci. 58 2614
[11]	Dodds N A, Hutson J M, Pellish J A, Reed R A, Kim H S, Berg M D, Friendlich M R, Phan A M, Seidleck C M, Xapsos M A, Deng X, Baumann R C, Schrimpf R D, King M P, Massengil L W, Weller R A 2010 IEEE Trans. Nucl. Sci. 57 3575
[12]	Morris W 2003 Proceedings of the 41th Annual International Reliability Physics Symposium Dallas, Texas, March 30-April 4, 2003 p76

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