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水热合成ZnO:Cd纳米棒的微结构及光致发光特性

王长远 杨晓红 马勇 冯媛媛 熊金龙 王维

水热合成ZnO:Cd纳米棒的微结构及光致发光特性

王长远, 杨晓红, 马勇, 冯媛媛, 熊金龙, 王维
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  • 采用水热法制备了ZnO和不同掺杂浓度的ZnO:Cd纳米棒,通过SEM,XRD、拉曼光谱等的分析,研究了ZnO和ZnO:Cd的微结构并测试分析了其光致发光特性. 结果表明,ZnO和ZnO:Cd纳米棒呈六角纤锌矿结构,Cd掺杂使得纳米棒体积更小. 由于内部张应力的影响,Cd掺杂使得材料光学带隙减少. 当掺杂浓度为2%时,合成的材料光致发光谱中出现了位于2.67 eV处,由导带底和Zn空位(VZn)缺陷能级跃迁造成的蓝光发射峰,并且Cd的掺入使得位于2.90 eV附近的紫光发射峰强度增强,对于研究ZnO蓝紫发光器件具有重要的意义.
    • 基金项目: 庆师范大学博士启动基金(批准号:10XLB001)和国家自然科学基金青年基金(批准号:61106129)资助的课题.
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    Zhang F H, Zhang Z Y, Zhang W H, Xue S Q, Yun J N, Yan J F 2008 IEEE 2 681

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    Jaffe J E, Snyder J A, Lin Z J, Hess A C 2000 Phys. Rev. B 62 1660

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    Bacaksiz E, Altunbas M, zc-elik S O, Oltulu O, Tomakin M, Yılmaz S 2009 Mater. Sci. Semicond. Process. 12 118

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    Bai L N, Zheng B J, Lian J S, Jiang Q 2012 Solid. State. Sci. 14 698

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    Lin B X, Fu Z X, Jia Y B 2001 Appl. Phys. Lett. 79 943

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    Vanheusden K, Seager C H, Warren W L, Tallant D R 1996 Appl. Phys. Lett. 68 403

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  • [1]

    Xia Y Y, Brault J, Damilano B, Chenot S, Vennegue's P, Nemoz M, Teisseire M, Leroux M, Obrecht R, Robin I C, Santailler J L, Feuillet G, Chauvea J M 2013 Appl. Phys. Express 6 0421011

    [2]

    Cheng P F, Li S T, Wang H 2013 Chin. Phys. B 22 107701

    [3]
    [4]
    [5]

    Gao H X, Hu R, Yang Y T 2012 Chin. Phys. Lett. 29 017305

    [6]
    [7]

    Nie M Zhao Y Zeng YJiang Y J 2013 Acta Phys. Sin. 62 176801 (in Chinese) [聂朦, 赵艳, 曾勇, 蒋毅坚 2013 物理学报 62 176801]

    [8]
    [9]

    Lv B, Zhou X, Linghu R F, Wang X L, Yang X D 2011 Chin. Phys. B 20 036104

    [10]

    Yang C, Wang X P, Wang L J, Pang X F, Li S K, Jing L W 2013 Chin. Phys. B 22 088101

    [11]
    [12]
    [13]

    Nakahara K, Akasaka S, Yuji H, Tamura K, Fujii T, Nishimoto Y, Takamizu D, Sasaki A, Tanabe T, Takasu H, Amaike H, Onuma T, Chichibu S F, Tsukazaki A, Ohtomo A, Kawasaki M 2010 Appl. Phys. Lett. 97 013501

    [14]
    [15]

    Hosseinmardi A, Shojaee N, Keyanpour R M, Ebadzadeh T 2012 Cera. Inter. 38 1975

    [16]
    [17]

    Zhong J B, Li J Z, He X Y, Zeng J, Lu Y, Hu W, Lin K 2012 Curr. Appl. Phys. 12 998

    [18]

    Lee W, Shin S, Jung D R, Kim J, Nahm C, Moon T, Park B 2012 Curr. Appl. Phys. 12 628

    [19]
    [20]
    [21]

    Li H, Liu E T, Chan F Y F, Lu Z, Chen R 2011 Mater. Lett. 65 3440

    [22]

    Wang C Z, Chen Z, He Y, Li L Y, Zhang D 2009 Appl. Surf. Sci 255 6881

    [23]
    [24]

    Chen R Q, Zou C W, Bian J M, Sandhu A, Gao W 2011 Nanotech. 22 1057061

    [25]
    [26]

    Yakuphanoglu F, Ilican S, Caglar M, Caglar Y 2010 Super. Micro. 47 732

    [27]
    [28]
    [29]

    Zhang J, Zhao S Q, Zhang K, Zhou J Q, Cai Y F 2012 Nanscale Res. Lett. 7 405

    [30]
    [31]

    Vijayalakshmi S, Venkataraj S, Jayavel R 2008 J. Phys. D: Appl. Phys. 41 245403

    [32]

    Tang X, Lv H F, Ma C Y, Zhao J J, Zhang Q Y 2008 Acta. Phys. Sin 57 1066 (in Chinese) [唐鑫, 吕海峰, 马春雨, 赵纪军, 张庆瑜 2008 物理学报 57 1066]

    [33]
    [34]
    [35]

    Huang Y Q, Liu M D, Li Z, Zeng Y K, Liu S B 2003 Mater. Sci. Eng. B 97 111

    [36]

    Zang H, Wang Z G, Pang L L, Wei K F, Yao C F, Shen T L, Sun J R, Ma Y Z, Gou J, Sheng Y B, Zhu Y B 2010 Acta. Phys. Sin. 59 4831 (in Chinese) [臧航, 王志光, 庞立龙, 魏孔芳, 姚存峰, 申铁龙, 孙建荣, 马艺准, 缑洁, 盛彦斌, 朱亚滨 2010 物理学报 59 4831]

    [37]
    [38]

    Deng Q, Ma Y, Yang X H, Ye L J, Zhang X Z, Zhang Q, Fu H W 2012 Acta. Phys. Sin. 61 247701 (in Chinese) [邓泉, 马勇, 杨晓红, 叶利娟, 张学忠, 张起, 付宏伟 2012 物理学报 61 247701]

    [39]
    [40]

    Zhang F H, Zhang Z Y, Zhang W H, Xue S Q, Yun J N, Yan J F 2008 IEEE 2 681

    [41]
    [42]
    [43]

    Jaffe J E, Snyder J A, Lin Z J, Hess A C 2000 Phys. Rev. B 62 1660

    [44]

    Bacaksiz E, Altunbas M, zc-elik S O, Oltulu O, Tomakin M, Yılmaz S 2009 Mater. Sci. Semicond. Process. 12 118

    [45]
    [46]

    Bai L N, Zheng B J, Lian J S, Jiang Q 2012 Solid. State. Sci. 14 698

    [47]
    [48]

    Lin B X, Fu Z X, Jia Y B 2001 Appl. Phys. Lett. 79 943

    [49]
    [50]
    [51]

    Vanheusden K, Seager C H, Warren W L, Tallant D R 1996 Appl. Phys. Lett. 68 403

    [52]

    Yang P D, Yan H Q, Mao S, Russo R, Johnson J, Saykally R, Morris N, Pham J, He R R, Choi H J 2002 Adv. Funct. Mater 12 323

    [53]
    [54]
    [55]
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  • 引用本文:
    Citation:
计量
  • 文章访问数:  1493
  • PDF下载量:  594
  • 被引次数: 0
出版历程
  • 收稿日期:  2014-03-11
  • 修回日期:  2014-04-08
  • 刊出日期:  2014-08-05

水热合成ZnO:Cd纳米棒的微结构及光致发光特性

  • 1. 重庆师范大学, 光学工程重点实验室, 重庆 400047
    基金项目: 

    庆师范大学博士启动基金(批准号:10XLB001)和国家自然科学基金青年基金(批准号:61106129)资助的课题.

摘要: 采用水热法制备了ZnO和不同掺杂浓度的ZnO:Cd纳米棒,通过SEM,XRD、拉曼光谱等的分析,研究了ZnO和ZnO:Cd的微结构并测试分析了其光致发光特性. 结果表明,ZnO和ZnO:Cd纳米棒呈六角纤锌矿结构,Cd掺杂使得纳米棒体积更小. 由于内部张应力的影响,Cd掺杂使得材料光学带隙减少. 当掺杂浓度为2%时,合成的材料光致发光谱中出现了位于2.67 eV处,由导带底和Zn空位(VZn)缺陷能级跃迁造成的蓝光发射峰,并且Cd的掺入使得位于2.90 eV附近的紫光发射峰强度增强,对于研究ZnO蓝紫发光器件具有重要的意义.

English Abstract

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