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嵌入Ag纳米颗粒层的DNA忆阻器

王媛 董瑞新 闫循领

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嵌入Ag纳米颗粒层的DNA忆阻器

王媛, 董瑞新, 闫循领

Organic memristive devices based on DNA embedded in silver nanoparticles layer

Wang Yuan, Dong Rui-Xin, Yan Xun-Ling
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  • 构建了具有“Al/DNA-CTMAB/Ag NPs/DNA-CTMAB/ITO”结构的有机忆阻器件, 并对其电流-电压 (I-V)曲线进行测量. 结果表明, 嵌入Ag纳米颗粒层, 不仅可以增强器件的导电性, 而且忆阻特性也显著提高. 当颗粒粒径在15–20 nm范围时, 开-关电流比ION/IOFF能够达到103. 器件的I-V特性受扫描电压幅值VA的影响, 随着VA的增大, 高阻态的电流变化较小, 而低阻态的电流明显增大, 开(或关)电压VSET (VRESET)和ION/IOFF增加. 实验还发现, 器件高低阻状态的相互转换取决于外加电场的方向, 说明该忆阻器具有极性.
    Two-terminal electrical bistable device is fabricated with structure “Al/deoxyribonucleic acid-cetyltrimethylam- monium bromide/silver nanoparticles/deoxyribonucleic acid-cetyltrimethylammonium bromide/indium tin oxide”, and I-V curves are measured. The results show that the conductivity and the memristive characteristics are significantly improved by the embedding Ag nanoparticles layer. The optimal particle diameters are in a range of 15 - 20 nm, and the maximum on/off current ratio can reach 103. It is also found that I-V characteristic of the device depends on the sweeping voltage amplitude VA. As VA increases, switching voltages (VSET, VRESET) and the on/off current ratio ION/IOFF increase. Furthermore, the transition between high-and low-resistance-state depends on the direction of the applied electric field, which shows that the device possesses polarity.
    • 基金项目: 国家自然科学基金(批准号: 11375081)和山东省自然科学基金(批准号: ZR2012FM026, ZR2012FL20)资助的课题.
    • Funds: Project supported by the National Natural Science Foundation of China (Grant No. 11375081) and the Natural Science Foundation of Shandong Province, China (Grant Nos. ZR2012FM026, ZR2012FL20).
    [1]

    Chen R, Zhou L W, Wang J Y, Chen C J, Shao X L, Jiang H, Zhang K L, L L R, Zhao J S 2014 Acta Phys. Sin. 63 067202 (in Chinese) [陈然, 周立伟, 王建云, 陈长军, 邵兴隆, 蒋浩, 张楷亮, 吕联荣, 赵金石 2014 物理学报 63 067202]

    [2]

    Wei X Y, Hu M, Zhang K L, Wang F, Liu K 2013 Acta Phys. Sin. 62 047201 (in Chinese) [韦晓莹, 胡明, 张楷亮, 王芳, 刘凯 2013 物理学报 62 047201]

    [3]

    Zhang T, Yin J, Zhao G F, Zhang W F, Xia Y D, Liu Z G 2014 Chin. Phys. B 23 087304

    [4]

    Chen J C, Liu C L, Sun Y S, Tung S H, Chen W C 2012 Soft Matter 8 526

    [5]

    Ouyang J, Chu C W, Tseng R J H, Prakash A, Yang Y 2005 Proc. IEEE 93 1287

    [6]

    Rong J L, Chen Y H, Zhou J, Zhang X, Wang L, Cao J 2013 Acta Phys. Sin. 62 228502 (in Chinese) [容佳玲, 陈赟汉, 周洁, 张雪, 王立, 曹进 2013 物理学报 62 228502]

    [7]

    Chen J, Ma D 2005 Appl. Phys. Lett. 87 023505

    [8]

    Lauters M, McCarthy B, Sarid D, Jabbour G E 2006 Appl. Phys. Lett. 89 013507

    [9]

    Ouyang J, Chu C W, Szmanda C R, Ma L, Yang Y 2004 Nat. Mater. 3 918

    [10]

    Prakash A, Ouyang J, Lin J L, Yang Y 2006 J. Appl. Phys. 100 054309

    [11]

    Tondelier D, Lmimouni K, Vuillaume D, Fery C, Haas G 2004 Appl. Phys. Lett. 85 5763

    [12]

    Ma L P, Liu J, Yang Y 2002 Appl. Phys. Lett. 80 2997

    [13]

    Reddy V S, Karak S, Dhar A 2009 Appl. Phys. Lett. 94 173304

    [14]

    Bozano L D, Kean B W, Beinhoff M, Carter K R, Rice P M, Scott J C 2005 Adv. Funct. Mater. 15 1933

    [15]

    Jin Z W, Liu G, Wang J Z 2013 AIP Adv. 3 052113

    [16]

    Liu G, Jin Z W, Zhang Z G, Wang J Z 2014 Appl. Phys. Lett. 104 023303

    [17]

    Ouyang J 2013 Org. Electron. 14 665

    [18]

    Tian X Z, Yang S Z, Zeng M, Wang L F, Wei J K, Xu Z, Wang W L, Bai X D 2014 Adv. Mater. 26 3649

  • [1]

    Chen R, Zhou L W, Wang J Y, Chen C J, Shao X L, Jiang H, Zhang K L, L L R, Zhao J S 2014 Acta Phys. Sin. 63 067202 (in Chinese) [陈然, 周立伟, 王建云, 陈长军, 邵兴隆, 蒋浩, 张楷亮, 吕联荣, 赵金石 2014 物理学报 63 067202]

    [2]

    Wei X Y, Hu M, Zhang K L, Wang F, Liu K 2013 Acta Phys. Sin. 62 047201 (in Chinese) [韦晓莹, 胡明, 张楷亮, 王芳, 刘凯 2013 物理学报 62 047201]

    [3]

    Zhang T, Yin J, Zhao G F, Zhang W F, Xia Y D, Liu Z G 2014 Chin. Phys. B 23 087304

    [4]

    Chen J C, Liu C L, Sun Y S, Tung S H, Chen W C 2012 Soft Matter 8 526

    [5]

    Ouyang J, Chu C W, Tseng R J H, Prakash A, Yang Y 2005 Proc. IEEE 93 1287

    [6]

    Rong J L, Chen Y H, Zhou J, Zhang X, Wang L, Cao J 2013 Acta Phys. Sin. 62 228502 (in Chinese) [容佳玲, 陈赟汉, 周洁, 张雪, 王立, 曹进 2013 物理学报 62 228502]

    [7]

    Chen J, Ma D 2005 Appl. Phys. Lett. 87 023505

    [8]

    Lauters M, McCarthy B, Sarid D, Jabbour G E 2006 Appl. Phys. Lett. 89 013507

    [9]

    Ouyang J, Chu C W, Szmanda C R, Ma L, Yang Y 2004 Nat. Mater. 3 918

    [10]

    Prakash A, Ouyang J, Lin J L, Yang Y 2006 J. Appl. Phys. 100 054309

    [11]

    Tondelier D, Lmimouni K, Vuillaume D, Fery C, Haas G 2004 Appl. Phys. Lett. 85 5763

    [12]

    Ma L P, Liu J, Yang Y 2002 Appl. Phys. Lett. 80 2997

    [13]

    Reddy V S, Karak S, Dhar A 2009 Appl. Phys. Lett. 94 173304

    [14]

    Bozano L D, Kean B W, Beinhoff M, Carter K R, Rice P M, Scott J C 2005 Adv. Funct. Mater. 15 1933

    [15]

    Jin Z W, Liu G, Wang J Z 2013 AIP Adv. 3 052113

    [16]

    Liu G, Jin Z W, Zhang Z G, Wang J Z 2014 Appl. Phys. Lett. 104 023303

    [17]

    Ouyang J 2013 Org. Electron. 14 665

    [18]

    Tian X Z, Yang S Z, Zeng M, Wang L F, Wei J K, Xu Z, Wang W L, Bai X D 2014 Adv. Mater. 26 3649

计量
  • 文章访问数:  2034
  • PDF下载量:  545
  • 被引次数: 0
出版历程
  • 收稿日期:  2014-08-10
  • 修回日期:  2014-10-13
  • 刊出日期:  2015-02-05

嵌入Ag纳米颗粒层的DNA忆阻器

  • 1. 聊城大学物理科学与信息工程学院, 山东省光通信和科学技术重点实验室, 聊城 252059
    基金项目: 

    国家自然科学基金(批准号: 11375081)和山东省自然科学基金(批准号: ZR2012FM026, ZR2012FL20)资助的课题.

摘要: 构建了具有“Al/DNA-CTMAB/Ag NPs/DNA-CTMAB/ITO”结构的有机忆阻器件, 并对其电流-电压 (I-V)曲线进行测量. 结果表明, 嵌入Ag纳米颗粒层, 不仅可以增强器件的导电性, 而且忆阻特性也显著提高. 当颗粒粒径在15–20 nm范围时, 开-关电流比ION/IOFF能够达到103. 器件的I-V特性受扫描电压幅值VA的影响, 随着VA的增大, 高阻态的电流变化较小, 而低阻态的电流明显增大, 开(或关)电压VSET (VRESET)和ION/IOFF增加. 实验还发现, 器件高低阻状态的相互转换取决于外加电场的方向, 说明该忆阻器具有极性.

English Abstract

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