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基于射线辐照条件下单轴应变Si纳米n型金属氧化物半导体场效应晶体管（NMOSFET）载流子的微观输运机制，揭示了单轴应变Si纳米NMOSFET器件电学特性随总剂量辐照的变化规律，同时基于量子机制建立了小尺寸单轴应变Si NMOSFET在射线辐照条件下的栅隧穿电流模型，应用Matlab对该模型进行了数值模拟仿真，探究了总剂量、器件几何结构参数、材料物理参数等对栅隧穿电流的影响.此外，通过实验进行对比，该模型仿真结果和总剂量辐照实验测试结果基本符合，从而验证了模型的可行性.本文所建模型为研究纳米级单轴应变Si NMOSFET应变集成器件可靠性及电路的应用提供了有价值的理论指导与实践基础.
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关键词:
- 单轴应变Si /
- 纳米n型金属氧化物半导体场效应晶体管 /
- 总剂量 /
- 栅隧穿电流
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[4] Ghetti A, Sangiorgi E, Bude J 2000 IEEE Trans. Electron Dev. 47 2358
[5] Hu H Y, Liu X Y, Lian Y C, Zhang H M, Song J J, Xuan R X, Shu B 2014 Acta Phys. Sin. 63 236102 (in Chinese)[胡辉勇, 刘翔宇, 连永昌, 张鹤鸣, 宋建军, 宣荣喜, 舒斌2014物理学报63 236102]
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[7] Zheng Q W, Yu X F, Cui J W, Guo Q, Ren D Y, Cong Z C, Zhou H 2014 Chin. Phys. B 23 106102
[8] Zhao Q W, Zhuang Y Q, Bao J L, Hu H 2016 Chin. Phys. B 25 046104
[9] Sun X, Xue F, Chen J, Zhang E X, Cui S, Lee J, Fleetwood D M, Ma T P 2013 IEEE Trans. Nucl. Sci. 60 402
[10] Liu H X, Zhuo Q Q, Wang Z, Wang Q Q 2014 Acta Phys. Sin. 63 016102 (in Chinese)[刘红侠, 王志, 卓青青, 王倩琼2014物理学报63 016102]
[11] Ceschia M, Paccagnella A, Scarpa A, Ghidini G 1998 IEEE Trans. Nucl. Sci. 45 2375
[12] Cho B J, Kim S J, Ling C H, Joo M S, Yeo I S 1999 Proceedings of the 7th International Symposium on Physical and Failure Analysis of Integrated Circuits p30
[13] Mou W B, Xu X 2005 High Power Laser Particle Beams 17 309 (in Chinese)[牟维兵, 徐曦2005强激光与粒子束17 309]
[14] Schwank J R, Shaneyfelt M R, Fleetwood D M, Felix J A, Dodd P E, Ferlet-Cavrois P P V 2008 IEEE Trans. Nucl. Sci. 55 1833
[15] Kamimura H, Akiyama M, Kuboyama S 1994 J. Nucl. Sci. Technol. 31 24
[16] Bordallo C C M, Teixeira F F, Silveira M A G, Agopian P G D, Simoen E, Claeys C, Martino J A 2013 IEEE Radiation and Its Effects on Components and Systems (RADECS), 14th European Conference on p1-4
[17] Kamimura H, Yoshioka S, Akiyama M, Kuboyama S 1994 IEEE Trans. Nucl. Sci. 31 24
[18] Wu H Y, Zhang H M, Song J J, Hu H Y 2011 Acta Phys. Sin. 60 097302 (in Chinese)[吴华英, 张鹤鸣, 宋建军, 胡辉勇2011物理学报60 097302]
[19] Wu H, Zhao Y, White M H 2006 Solid State Electron 50 1164
[20] Ungersboeck E, Dhar S, Karlowatz G 2007 J. Conput. Electron. 6 55
[21] Lim J S, Yang X, Nishida T, Thompson S E 2006 Appl. Phys. Lett. 89 073509
[22] Hsieh C Y, Chen M J 2007 IEEE Electron Dev. Lett. 28 818
[23] Irisawa T, Numata T, Toyoda E 2007 Symposium on VLSI Technology Digest of Technolcal p36
[24] Ghatak A, Lokanathan S 2004 Quantum Mechanics Theory and Application (5th Ed.) (New Delhi, India:McMillan) p380
[25] Zhao Y J, White M H 2004 Solid State Electron. 48 1801
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[1] Chaves F A, Jimnez D, Garca Ruiz F J, Godoy A, Su J 2012 IEEE Trans. Electron Dev. 59 2589
[2] Chen W B, Xu J P, Zou X, Li Y P, Xu S G, Hu Z F 2006 Acta Phys. Sin. 55 5036 (in Chinese)[陈卫兵, 徐静平, 邹晓, 李艳萍, 许胜国, 胡致富2006物理学报55 5036]
[3] Rodrguez-Ruiz G A, Gutirrez-Domnguez E A, Sarmiento-Reyes A, Stanojevic Z, Kosina H, Guarin F J, Garca-Ramrez P J 2015 IEEE Electron Dev. Lett. 36 387
[4] Ghetti A, Sangiorgi E, Bude J 2000 IEEE Trans. Electron Dev. 47 2358
[5] Hu H Y, Liu X Y, Lian Y C, Zhang H M, Song J J, Xuan R X, Shu B 2014 Acta Phys. Sin. 63 236102 (in Chinese)[胡辉勇, 刘翔宇, 连永昌, 张鹤鸣, 宋建军, 宣荣喜, 舒斌2014物理学报63 236102]
[6] Huang R, Zhang G Y, Li Y X, Zhang X 2005 SOI CMOS Technologies and Applications (Beijing:Science Press) p3(in Chinese)[黄如, 张国艳, 李映雪, 张兴2005 SOI CMOS技术及其应用(北京:科学出版社)第3页]
[7] Zheng Q W, Yu X F, Cui J W, Guo Q, Ren D Y, Cong Z C, Zhou H 2014 Chin. Phys. B 23 106102
[8] Zhao Q W, Zhuang Y Q, Bao J L, Hu H 2016 Chin. Phys. B 25 046104
[9] Sun X, Xue F, Chen J, Zhang E X, Cui S, Lee J, Fleetwood D M, Ma T P 2013 IEEE Trans. Nucl. Sci. 60 402
[10] Liu H X, Zhuo Q Q, Wang Z, Wang Q Q 2014 Acta Phys. Sin. 63 016102 (in Chinese)[刘红侠, 王志, 卓青青, 王倩琼2014物理学报63 016102]
[11] Ceschia M, Paccagnella A, Scarpa A, Ghidini G 1998 IEEE Trans. Nucl. Sci. 45 2375
[12] Cho B J, Kim S J, Ling C H, Joo M S, Yeo I S 1999 Proceedings of the 7th International Symposium on Physical and Failure Analysis of Integrated Circuits p30
[13] Mou W B, Xu X 2005 High Power Laser Particle Beams 17 309 (in Chinese)[牟维兵, 徐曦2005强激光与粒子束17 309]
[14] Schwank J R, Shaneyfelt M R, Fleetwood D M, Felix J A, Dodd P E, Ferlet-Cavrois P P V 2008 IEEE Trans. Nucl. Sci. 55 1833
[15] Kamimura H, Akiyama M, Kuboyama S 1994 J. Nucl. Sci. Technol. 31 24
[16] Bordallo C C M, Teixeira F F, Silveira M A G, Agopian P G D, Simoen E, Claeys C, Martino J A 2013 IEEE Radiation and Its Effects on Components and Systems (RADECS), 14th European Conference on p1-4
[17] Kamimura H, Yoshioka S, Akiyama M, Kuboyama S 1994 IEEE Trans. Nucl. Sci. 31 24
[18] Wu H Y, Zhang H M, Song J J, Hu H Y 2011 Acta Phys. Sin. 60 097302 (in Chinese)[吴华英, 张鹤鸣, 宋建军, 胡辉勇2011物理学报60 097302]
[19] Wu H, Zhao Y, White M H 2006 Solid State Electron 50 1164
[20] Ungersboeck E, Dhar S, Karlowatz G 2007 J. Conput. Electron. 6 55
[21] Lim J S, Yang X, Nishida T, Thompson S E 2006 Appl. Phys. Lett. 89 073509
[22] Hsieh C Y, Chen M J 2007 IEEE Electron Dev. Lett. 28 818
[23] Irisawa T, Numata T, Toyoda E 2007 Symposium on VLSI Technology Digest of Technolcal p36
[24] Ghatak A, Lokanathan S 2004 Quantum Mechanics Theory and Application (5th Ed.) (New Delhi, India:McMillan) p380
[25] Zhao Y J, White M H 2004 Solid State Electron. 48 1801
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