基于窄带隙聚合物的高性能可见-近红外光伏探测器

肖标; 张敏莉; 王洪波; 刘继延

doi:10.7498/aps.66.228501

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摘要

聚合物光伏探测器是一种极具应用前景的新型光电探测器件.研究了基于窄带隙聚合物的高性能可见-近红外光伏探测器，结果表明，所制备的光伏探测器在可见至近红外光谱范围内具有宽的光谱响应（380–960 nm）、出色的响应度（840 nm时达到380 mA/W）和归一化探测度；同时，器件在暗态反偏条件下的能级示意图揭示了器件内平均电场较低是较厚光敏层器件具有低噪声电流的主要原因.电容-电压与时间周期性响应曲线研究表明聚合物光伏探测器具有快速的响应能力和良好的周期重复性.

关键词:

作者及机构信息

1.
江汉大学, 光电化学材料与器件教育部重点实验室, 武汉 430056

通信作者: 王洪波, hongbo.wang@jhun.edu.cn

基金项目: 国家高技术研究发展计划（批准号：2015AA033400）、国家自然科学基金（批准号：21302232）、湖北省自然科学基金（批准号：2014CFA098）、中国博士后科学基金（批准号：2016M600567）、光电化学材料与器件教育部重点实验室（江汉大学）开放课题基金（批准号：JDGD-201608）和欧阳康乐产学研用基金资助的课题.

参考文献

[1]	Michel J, Liu J, Kimerling L C 2010 Nat. Photon. 4 527
[2]	Kahn J M, Barry J R 1997 Proc. IEEE 85 265
[3]	Kim S, Lim Y T, Soltesz E G, Grand A M D, Lee J, Nakayama A, Parker J A, Mihaljevic T, Laurence R G, Dor D M, Cohn L H, Bawendi M G, Frangioni J V 2004 Nat. Biotechnol. 22 93
[4]	Rogalski A, Chrzanowski K 2002 Opto-Electron. Rev. 10 111
[5]	Ettl R, Chao I, Diederich F, Whetten R L 1991 Nature 353 149
[6]	Baeg K J, Binda M, Natali D, Caironi M, Noh Y Y 2013 Adv. Mater. 25 4267
[7]	Hendriks K H, Li W, Wienk M M, Janssen R A J 2014 J. Am. Chem. Soc. 136 12130
[8]	Su Z, Hou F, Wang X, Gao Y, Jin F, Zhang G, Li Y, Zhang L, Chu B, Li W 2015 ACS Appl. Mater. Interfaces 7 2529
[9]	Gao M, Wang W, Li L, Miao J, Zhang F 2017 Chin. Phys. B 26 018201
[10]	Wang X, Wang H, Huang W, Yu J 2014 Org. Electron. 15 3000
[11]	Hu X, Dong Y, Huang F, Gong X, Cao Y 2013 J. Phys. Chem. C 117 6537
[12]	Gong X, Tong M, Xia Y, Cai W, Moon J S, Cao Y, Yu G, Shieh C L, Nilsson B, Heeger A J 2009 Science 325 1665
[13]	Lim S B, Ji C H, Oh I S, Oh S Y 2016 J. Mater. Chem.C 4 4920
[14]	Shafian S, Hwang H, Kim K 2016 Opt. Express 24 25308
[15]	Wu S, Xiao B, Zhao B, He Z, Wu H, Cao Y 2016 Small 12 3374
[16]	Dou L, Chang W H, Gao J, Chen C C, You J B, Yang Y 2013 Adv. Mater. 25 825
[17]	Eo Y S, Rhee H W, Chin B D, Yu G W 2009 Synth. Met. 159 1910
[18]	Xie Y, Gong M, Shastry T A, Lohrman J, Hersam M C, Ren S 2013 Adv. Mater. 25 3433
[19]	He C, Zhong C, Wu H, Yang R, Yang W, Huang F, Bazan G C, Cao Y 2010 J. Mater. Chem. 20 2617
[20]	Wang Z, Safdar M, Jiang C, He J 2012 Nano Lett. 12 4715
[21]	Parker I D 1994 J. Appl. Phys. 75 1656
[22]	Salamandra L, Susanna G, Penna S, Reale A 2011 IEEE Photon. Tech. L. 23 780
[23]	Wang J B, Li W L, Chu B, Lee C S, Su Z S, Zhang G, Wu S H, Yan F 2011 Org. Electron. 12 34
[24]	Yao Y, Liang Y, Shrotriya V, Xiao S, Yu L, Yang Y 2007 Adv. Mater. 19 3979
[25]	Zhou Y, Wang L, Wang J, Pei J, Cao Y 2008 Adv. Mater. 20 3745
[26]	Konstantatos G, Levina L, Tang J, Fisher A, Sargent E H 2008 Nano Lett. 8 1446
[27]	Lopez-Sanchez O, Lembke D, Kayci M, Radenovic A, Kis A 2013 Nat. Nanotech. 8 497
[28]	Xie X, Kwok S Y, Lu Z, Liu Y, Cao Y, Luo L, Zapien J A, Bello I, Lee C S, Lee S T, Zhang W 2012 Nanoscale 4 2914

施引文献

[1]	Michel J, Liu J, Kimerling L C 2010 Nat. Photon. 4 527
[2]	Kahn J M, Barry J R 1997 Proc. IEEE 85 265
[3]	Kim S, Lim Y T, Soltesz E G, Grand A M D, Lee J, Nakayama A, Parker J A, Mihaljevic T, Laurence R G, Dor D M, Cohn L H, Bawendi M G, Frangioni J V 2004 Nat. Biotechnol. 22 93
[4]	Rogalski A, Chrzanowski K 2002 Opto-Electron. Rev. 10 111
[5]	Ettl R, Chao I, Diederich F, Whetten R L 1991 Nature 353 149
[6]	Baeg K J, Binda M, Natali D, Caironi M, Noh Y Y 2013 Adv. Mater. 25 4267
[7]	Hendriks K H, Li W, Wienk M M, Janssen R A J 2014 J. Am. Chem. Soc. 136 12130
[8]	Su Z, Hou F, Wang X, Gao Y, Jin F, Zhang G, Li Y, Zhang L, Chu B, Li W 2015 ACS Appl. Mater. Interfaces 7 2529
[9]	Gao M, Wang W, Li L, Miao J, Zhang F 2017 Chin. Phys. B 26 018201
[10]	Wang X, Wang H, Huang W, Yu J 2014 Org. Electron. 15 3000
[11]	Hu X, Dong Y, Huang F, Gong X, Cao Y 2013 J. Phys. Chem. C 117 6537
[12]	Gong X, Tong M, Xia Y, Cai W, Moon J S, Cao Y, Yu G, Shieh C L, Nilsson B, Heeger A J 2009 Science 325 1665
[13]	Lim S B, Ji C H, Oh I S, Oh S Y 2016 J. Mater. Chem.C 4 4920
[14]	Shafian S, Hwang H, Kim K 2016 Opt. Express 24 25308
[15]	Wu S, Xiao B, Zhao B, He Z, Wu H, Cao Y 2016 Small 12 3374
[16]	Dou L, Chang W H, Gao J, Chen C C, You J B, Yang Y 2013 Adv. Mater. 25 825
[17]	Eo Y S, Rhee H W, Chin B D, Yu G W 2009 Synth. Met. 159 1910
[18]	Xie Y, Gong M, Shastry T A, Lohrman J, Hersam M C, Ren S 2013 Adv. Mater. 25 3433
[19]	He C, Zhong C, Wu H, Yang R, Yang W, Huang F, Bazan G C, Cao Y 2010 J. Mater. Chem. 20 2617
[20]	Wang Z, Safdar M, Jiang C, He J 2012 Nano Lett. 12 4715
[21]	Parker I D 1994 J. Appl. Phys. 75 1656
[22]	Salamandra L, Susanna G, Penna S, Reale A 2011 IEEE Photon. Tech. L. 23 780
[23]	Wang J B, Li W L, Chu B, Lee C S, Su Z S, Zhang G, Wu S H, Yan F 2011 Org. Electron. 12 34
[24]	Yao Y, Liang Y, Shrotriya V, Xiao S, Yu L, Yang Y 2007 Adv. Mater. 19 3979
[25]	Zhou Y, Wang L, Wang J, Pei J, Cao Y 2008 Adv. Mater. 20 3745
[26]	Konstantatos G, Levina L, Tang J, Fisher A, Sargent E H 2008 Nano Lett. 8 1446
[27]	Lopez-Sanchez O, Lembke D, Kayci M, Radenovic A, Kis A 2013 Nat. Nanotech. 8 497
[28]	Xie X, Kwok S Y, Lu Z, Liu Y, Cao Y, Luo L, Zapien J A, Bello I, Lee C S, Lee S T, Zhang W 2012 Nanoscale 4 2914

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基于窄带隙聚合物的高性能可见-近红外光伏探测器

1. 江汉大学, 光电化学材料与器件教育部重点实验室, 武汉 430056

通信作者: 王洪波, hongbo.wang@jhun.edu.cn

基金项目:

国家高技术研究发展计划（批准号：2015AA033400）、国家自然科学基金（批准号：21302232）、湖北省自然科学基金（批准号：2014CFA098）、中国博士后科学基金（批准号：2016M600567）、光电化学材料与器件教育部重点实验室（江汉大学）开放课题基金（批准号：JDGD-201608）和欧阳康乐产学研用基金资助的课题.

收稿日期: 2017-06-03

修回日期: 2017-07-24

刊出日期: 2017-11-05

摘要: 聚合物光伏探测器是一种极具应用前景的新型光电探测器件.研究了基于窄带隙聚合物的高性能可见-近红外光伏探测器，结果表明，所制备的光伏探测器在可见至近红外光谱范围内具有宽的光谱响应（380–960 nm）、出色的响应度（840 nm时达到380 mA/W）和归一化探测度；同时，器件在暗态反偏条件下的能级示意图揭示了器件内平均电场较低是较厚光敏层器件具有低噪声电流的主要原因.电容-电压与时间周期性响应曲线研究表明聚合物光伏探测器具有快速的响应能力和良好的周期重复性.

关键词:

High performence visble-near infrared photovoltaic detector based on narrow bandgap polymer

1.
Key Laboratory of Optoelectronic Chemical Materials and Devices, Ministry of Education, School of Chemical and Environmental Engineering, Jianghan University, Wuhan 430056, China

Fund Project:

Project supported by the National High Technology Research and Development Program of China (Grant No. 2015AA033400), the National Natural Science Foundation of China (Grant No. 21302232), Hubei Natural Science Foundation, China (Grant No. 2014CFA098), China Postdoctoral Science Foundation, China (Grant No. 2016M600567), the Opening Project of Key Laboratory of Optelectronic Chemical Materials and Devices (Jianghan University), Ministry of Education of China (Grant No. JDGD-201608) and Ouyang Kangle Innovation Fund for Production-Study-Research-Application.

Received Date: 03 June 2017

Accepted Date: 24 July 2017

Published Online: 05 November 2017

Abstract: Polymer-based visible-near infrared photodetectors have attracted considerable attention in the recent years due to their unique advantages of low cost of fabrication, compatibility with lightweight/flexible electronics, and wide material sources. Current researches mainly focus on high performence visble-near infrared photovoltaic detector based on narrow bandgap polymer. Device structure of the photodetector is ITO/PEDOT:PSS/photosensitive layer/Ca/Al. The weak light (0.4 mW/cm2, 800 nm) and reverse bias (-2 V) induce insignificant differences in photocurrent among the devices. Current values of 1.69×10-4 A/cm2, 7.96×10-5 A/cm2 and 6.98×10-5 A/cm2 are obtained with photosensitive layer thickness values of 100, 200 and 300 nm, respectively. However, the dark current density-voltage characteristics of the detectors with various thickness values of the photosensitive layer show that reverse bias (-2 V) induces significant differences in current among the devices. Current values of 1.35×10-6 A/cm2, 1.13×10-7 A/cm2 and 2.98×10-8 A/cm2 are obtained with photosensitive layer thickness values of 100 nm, 200 nm and 300 nm, respectively. Meanwhile, all detectors possess high rectification ratios over 105(±2 V), indicating good diode rectification characteristics. Photosensitivity measurements show that detection spectral regions of the detectors are extended from 380 nm to 960 nm. The values of detectivity (D*) of detectors with various thickness values of photosensitive layers are investigated, and the obtained values of D* of tested detectors are found to be very stable in a range from 400 nm to 860 nm, and the average D* value for the 300 nm thick device in this spectral range is as high as 6.89×1012 Jones. The latter compares well with values obtained with silicon detectors. In a range from 800 nm to 900 nm, the estimated detectivities of the 300 nm and 200 nm thick detectors are slightly higher than those obtained with InGaAs devices. Through analyzing energy band diagrams of the polymer photodetectors under reverse voltage bias it could be argued that the relatively weak electric field in the thicker device is the origin of the lower noise current density. The capacitance characteristics of polymer based detectors at high frequency (100 kHz) are examined through capacitance-voltage curves, and the resulting data show that capacitances of all devices at reverse and even small positive voltage are constant. This indicates that the device photosensitive layers are fully depleted and fast signal detections are theoretically possible. The time responses of detectors under near-infrared stimulation are also examined. The output signal appears to rise and fall periodically according to the input signal, suggesting a good repeatability. The rise and fall times for the devices are recorded to be ~5 μs and ~50 μs, indicating that the polymer photodetectors have quick response capabilities.

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