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利用传输矩阵理论和TFCalc薄膜设计软件分析了分布布拉格反射镜和垂直腔面发射激光器（VCSEL）的反射率谱特性，对比了从谐振腔入射与从表面入射时反射率谱的差异，为白光反射谱表征VCSEL外延片提供了依据.利用Crosslight软件模拟了InGaAs/AlGaAs应变量子阱的增益谱随温度的变化特性及VCSEL器件内部温度分布，设计了增益-腔模调谐的VCSEL.采用金属有机物化学气相淀积设备外延生长了顶发射VCSEL，制作了氧化孔径为7.5 m的氧化限制型VCSEL器件，测试了器件的直流特性、光谱特性和眼图特性；6 mA，2.5 V偏置条件下输出光功率达5 mW，4级脉冲幅度调制传输速率达50 Gbit/s.
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关键词:
- 垂直腔面发射激光器 /
- 分布布拉格反射镜 /
- 量子阱 /
- 金属有机物化学气相淀积
[1] Saha A K, Islam S 2009 Opt. Quant. Electron 41 873
[2] Moser P 2015 Ph. D. Dissertation (Berlin:Technische Universitt Berlin)
[3] Li T, Ning Y Q, Hao E J, Cui J J, Zhang Y, Liu G Y, Qin L, Liu Y, Wang L J, Cui D F, Xu Z Y 2009 Sci. China Ser F:Inform. Sci. 52 1226
[4] Wang Y H, Bo B X 2013 Chin. J. Lumin. 34 184
[5] Blokhin S A, Bobrov M A, Maleev N A, Kuzmenkov A G, Sakharov A V, Blokhin A A, Moser P, Lott J A, Bimberg D, Usinov V M 2014 Appl. Phys. Lett. 105 061104
[6] Moser P, Lott J A, Bimberg D 2013 IEEE J. Sel. Top. Quantum Electron. 19 1702212
[7] Westbergh P, Gustavsson J S, Kgel B, Haglund , Larsson A 2011 IEEE J. Sel. Top. Quantum Electron. 17 1603
[8] Feng Y, Hao Y Q, Wang X T, Liu G J, Yan C L, Zhang J B, Li Z J, Li Y 2017 Chin. Laser J. 44 47 (in Chinese)[冯源, 郝永芹, 王宪涛, 刘国军, 晏长岭, 张家斌, 李再金, 李洋 2017 中国激光 44 47]
[9] Kuchta D M, Rylyakov A V, Doany F E, Schow C L, Proesel J E, Baks C W, Westbergh P, Gustavsson J S, Larsson A 2015 IEEE Photon. Technol. Lett. 27 577
[10] Coldren L A, Corzine S W, Maanovi M L 2012 Diode Lasers and Photonic Integrated Circuits, Second Edition (New Jersey:John Wiley Sons, Inc.) pp288-298
[11] Blakemore J S 1982 J. Appl. Phys. 53 123
[12] Casey H C, Sell D D, Wecht K W 1975 J. Appl. Phys. 46 250
[13] Zhang Y M, Zhong J C, Zhao Y J, Hao Y Q, Li L, Wang Y X, Su W 2005 Chin. J. Semicond. 5 1024 (in Chinese)[张永明, 钟景昌, 赵英杰, 郝永芹, 李林, 王玉霞, 苏伟 2005 半导体学报 5 1024]
[14] Zhang X, Zhang Y, Zhang J W, Zhong C Y, Huang Y W, Ning Y Q, Gu S H, Wang L J 2016 Acta Phys. Sin. 65 134204 (in Chinese)[张星, 张奕, 张建伟, 钟础宇, 黄佑文, 宁永强, 顾思洪, 王立军 2016 物理学报 65 134204]
[15] Cui M, Han J, Deng J, Li J J, Xing Y H, Chen X, Zhu Q F 2015 Semicond. Optoelectron. 36 38 (in Chinese)[崔明, 韩军, 邓军, 李建军, 邢艳辉, 陈翔, 朱启发 2015 半导体光电 36 38]
[16] Li L, Zhong J C, Zhang Y M, Zhao Y J, Wang Y, Liu W L, Hao Y Q, Su W, Yan C L 2005 Atca Photon. Sin. 3 343 (in Chinese)[李林, 钟景昌, 张永明, 赵英杰, 王勇, 刘文莉, 郝永琴, 苏伟, 晏长岭 2005 光子学报 3 343]
[17] Zhang J W, Ning Y Q, Zhang X, Zeng Y G, Zhang J, Liu Y, Qin L, Wang L J 2013 Chin. Laser J. 40 6 (in Chinese)[张建伟, 宁永强, 张星, 曾玉刚, 张建, 刘云, 秦莉, 王立军 2013 中国激光 40 6]
[18] Chen M, Guo X, Guan B L, Deng J, Dong L M, Shen G D 2006 Acta Phys. Sin. 55 5842 (in Chinese)[陈敏, 郭霞, 关宝璐, 邓军, 董立闽, 沈光地 2006 物理学报 55 5842]
[19] Szczerba K, Lengyel T, Karlsson M, Andrekson P A, Larsson A 2016 IEEE Photon. Technol. Lett. 28 2519
[20] Wang J Y, Murty M V R, Wang C, Hui D, Harren A L, Chang H H, Feng Z W, Fanning T R, Sridhara A, Taslim S, Cai X L, Chu J, Giovane L 2017 Proc. SPIE 10122 1012202
[21] Li H, Wolf P, Jia X W, Lott J A, Bimberg D 2017 Appl. Phys. Lett. 111 243508
[22] Larisch G, Moser P, Lott J A, Bimberg D 2017 IEEE J. Quantum Electron. 53 2400908
[23] Dalir H, Koyama F 2013 Appl. Phys. Lett. 103 091109
[24] Kao H Y, Chi Y C, Peng C Y, Leong S F, Chang C K, Wu Y C, Shih T T, Huang J J, Kuo H C, Cheng W H, Wu C H, Lin G R 2017 IEEE J. Quantum Electron. 53 8000408
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[1] Saha A K, Islam S 2009 Opt. Quant. Electron 41 873
[2] Moser P 2015 Ph. D. Dissertation (Berlin:Technische Universitt Berlin)
[3] Li T, Ning Y Q, Hao E J, Cui J J, Zhang Y, Liu G Y, Qin L, Liu Y, Wang L J, Cui D F, Xu Z Y 2009 Sci. China Ser F:Inform. Sci. 52 1226
[4] Wang Y H, Bo B X 2013 Chin. J. Lumin. 34 184
[5] Blokhin S A, Bobrov M A, Maleev N A, Kuzmenkov A G, Sakharov A V, Blokhin A A, Moser P, Lott J A, Bimberg D, Usinov V M 2014 Appl. Phys. Lett. 105 061104
[6] Moser P, Lott J A, Bimberg D 2013 IEEE J. Sel. Top. Quantum Electron. 19 1702212
[7] Westbergh P, Gustavsson J S, Kgel B, Haglund , Larsson A 2011 IEEE J. Sel. Top. Quantum Electron. 17 1603
[8] Feng Y, Hao Y Q, Wang X T, Liu G J, Yan C L, Zhang J B, Li Z J, Li Y 2017 Chin. Laser J. 44 47 (in Chinese)[冯源, 郝永芹, 王宪涛, 刘国军, 晏长岭, 张家斌, 李再金, 李洋 2017 中国激光 44 47]
[9] Kuchta D M, Rylyakov A V, Doany F E, Schow C L, Proesel J E, Baks C W, Westbergh P, Gustavsson J S, Larsson A 2015 IEEE Photon. Technol. Lett. 27 577
[10] Coldren L A, Corzine S W, Maanovi M L 2012 Diode Lasers and Photonic Integrated Circuits, Second Edition (New Jersey:John Wiley Sons, Inc.) pp288-298
[11] Blakemore J S 1982 J. Appl. Phys. 53 123
[12] Casey H C, Sell D D, Wecht K W 1975 J. Appl. Phys. 46 250
[13] Zhang Y M, Zhong J C, Zhao Y J, Hao Y Q, Li L, Wang Y X, Su W 2005 Chin. J. Semicond. 5 1024 (in Chinese)[张永明, 钟景昌, 赵英杰, 郝永芹, 李林, 王玉霞, 苏伟 2005 半导体学报 5 1024]
[14] Zhang X, Zhang Y, Zhang J W, Zhong C Y, Huang Y W, Ning Y Q, Gu S H, Wang L J 2016 Acta Phys. Sin. 65 134204 (in Chinese)[张星, 张奕, 张建伟, 钟础宇, 黄佑文, 宁永强, 顾思洪, 王立军 2016 物理学报 65 134204]
[15] Cui M, Han J, Deng J, Li J J, Xing Y H, Chen X, Zhu Q F 2015 Semicond. Optoelectron. 36 38 (in Chinese)[崔明, 韩军, 邓军, 李建军, 邢艳辉, 陈翔, 朱启发 2015 半导体光电 36 38]
[16] Li L, Zhong J C, Zhang Y M, Zhao Y J, Wang Y, Liu W L, Hao Y Q, Su W, Yan C L 2005 Atca Photon. Sin. 3 343 (in Chinese)[李林, 钟景昌, 张永明, 赵英杰, 王勇, 刘文莉, 郝永琴, 苏伟, 晏长岭 2005 光子学报 3 343]
[17] Zhang J W, Ning Y Q, Zhang X, Zeng Y G, Zhang J, Liu Y, Qin L, Wang L J 2013 Chin. Laser J. 40 6 (in Chinese)[张建伟, 宁永强, 张星, 曾玉刚, 张建, 刘云, 秦莉, 王立军 2013 中国激光 40 6]
[18] Chen M, Guo X, Guan B L, Deng J, Dong L M, Shen G D 2006 Acta Phys. Sin. 55 5842 (in Chinese)[陈敏, 郭霞, 关宝璐, 邓军, 董立闽, 沈光地 2006 物理学报 55 5842]
[19] Szczerba K, Lengyel T, Karlsson M, Andrekson P A, Larsson A 2016 IEEE Photon. Technol. Lett. 28 2519
[20] Wang J Y, Murty M V R, Wang C, Hui D, Harren A L, Chang H H, Feng Z W, Fanning T R, Sridhara A, Taslim S, Cai X L, Chu J, Giovane L 2017 Proc. SPIE 10122 1012202
[21] Li H, Wolf P, Jia X W, Lott J A, Bimberg D 2017 Appl. Phys. Lett. 111 243508
[22] Larisch G, Moser P, Lott J A, Bimberg D 2017 IEEE J. Quantum Electron. 53 2400908
[23] Dalir H, Koyama F 2013 Appl. Phys. Lett. 103 091109
[24] Kao H Y, Chi Y C, Peng C Y, Leong S F, Chang C K, Wu Y C, Shih T T, Huang J J, Kuo H C, Cheng W H, Wu C H, Lin G R 2017 IEEE J. Quantum Electron. 53 8000408
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