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研究了表面预处理对GaN同质外延的影响,获得了高电子迁移率AlGaN/GaN异质结材料.通过NH3/H2混合气体与H2交替通入反应室的方法对GaN模板和GaN半绝缘衬底进行高温预处理.研究结果表明,NH3/H2能够抑制GaN的分解,避免粗糙表面,但不利于去除表面的杂质,黄光带峰相对强度较高; H2促进GaN分解,随时间延长GaN分解加剧,导致模板表面粗糙不平,AlGaN/GaN HEMT材料二维电子气迁移率降低.采用NH3/H2混合气体与H2交替气氛模式处理模板或衬底表面,能够清洁表面,去除表面杂质,获得平滑的生长表面和外延材料表面,有利于提高AlGaN/GaN HEMT材料电学性能.在GaN衬底上外延AlGaN/GaN HEMT材料,2DEG迁移率达到2113 cm2/V·s,电学性能良好.
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关键词:
- 金属有机物化学气相沉积 /
- 氮化镓 /
- 热处理 /
- 同质外延
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[22] Calleja E, Sánchez F J, Basak D 1997 Phys. Rev. B 55 4689
[23] Khan A M, Yang J W, Knap W, Frayssinet E, Hu X, Simin G, Prystawko P, Leszczynski M, Grzegory I, Porowski S, Gaska R, Shur M S, Beaumont B, Teisseire M, Neu G 2000 Appl. Phys. Lett. 76 3807
[24] Tomás A P, Fontserè A, Llobet J, Placidi M, Rennesson S, Baron N, Chenot S, Moreno J C, Cordier Y 2013 J. Appl. Phys. 113 174501
[25] Piotrowska A B, Kamińska E A, Wojtasiak W, Gwarek W, Kucharski R, Zajc M, Prystawko P, Kruszewski P, Ekielski M, Kaczmarski J, Kozubal M, Trajnerowicz A, Taube A 2016 ECS Trans. 75 77
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[1] Fang Y L, Feng Z H, Yin J Y, Zhang Z R, L Y J, Dun S B, Liu B, Li C M, Cai S J 2015 Phys. Status Solidi B 252 1006
[2] Khan M A, Kuznia J N, Olson D T, Schaff W J 1994 Appl. Phys. Lett. 65 1121
[3] Fang Y L, Feng Z H, Li C M, Song X B, Yin J Y, Zhou X Y, Wang Y G, L Y J, Cai S J 2015 Chin. Phys. Lett. 32 037202
[4] Bajo M M, Hodges C, Uren M J, Kuball M 2012 Appl. Phys. Lett. 101 033508
[5] Iwata S, Kubo S, Konishi M, Saimei T, Kurai S, Taguchi T, Kainosho K, Yokohata A 2003 Mat. Sci. Semicon. Proc. 6 527
[6] Kotani J, Yamada A, Ishiguro T, Tomabechi S, Nakamura N 2016 Appl. Phys. Lett. 108 152109
[7] Arslan E, Altındal Ş, Özçelik S, Ozbay E 2009 J. Appl. Phys. 105 023705
[8] Lee W, Ryou J H, Yoo D, Limb J, Dupuis R D 2007 Appl. Phys. Lett. 90 093509
[9] Oshimura Y, Takeda K, Sugiyama1 T, Iwaya M, Kamiyama S, Amano H, Akasaki I, Bandoh A, Udagawa T 2010 Phys. Status Solidi C 7 1974
[10] Demchenko D O, Diallo I C, Reshchikov M A 2016 J. Appl. Phys. 119 035702
[11] Koblmller G, Chu R M, Raman A, Mishra U K, Speck J S 2010 J. Appl. Phys. 107 043527
[12] Bermudez V M 2004 Surf. Sci. 565 89
[13] Koleske D D, Wickenden A E, Henry R L, Twigg M E, Culbertson J C, Gorman R J 1998 Appl. Phys. Lett. 73 2018
[14] Koleske D D, Wickenden A E, Henry R L, Culbertson J C, Twigg M E 2001 J. Cryst. Growth 223 466
[15] Fathallah W, Boufaden T, Jani B E 2007 Phys. Status Solidi C 4 145
[16] Manfra M J, Pfeiffer L N, West K W, Stormer H L, Baldwin K W, Hsu J W P, Lang D V 2000 Appl. Phys. Lett. 77 2888
[17] Chen J T, Hsu C W, Forsberg U, Janzén E 2015 J. Appl. Phys. 117 085301
[18] Detchprohm T, Xia Y, Xi Y, Zhu M, Zhao W, Li Y, Schubert E F, Liu L, Tsvetkov D, Hanser D, Wetzel C 2007 J. Cryst. Growth 298 272
[19] Zanato D, Gokden S, Balkan N, Ridley B K, Schaff W J 2004 Semicond. Sci. Techol. 19 427
[20] Reshchikov M A, Morko H 2005 J. Appl. Phys. 97 061301
[21] Ryou J H, Liu J P, Zhang Y, Horne C A, Lee W, Shen S C, Dupuis R D 2008 Phys. Status Solidi C 5 1849
[22] Calleja E, Sánchez F J, Basak D 1997 Phys. Rev. B 55 4689
[23] Khan A M, Yang J W, Knap W, Frayssinet E, Hu X, Simin G, Prystawko P, Leszczynski M, Grzegory I, Porowski S, Gaska R, Shur M S, Beaumont B, Teisseire M, Neu G 2000 Appl. Phys. Lett. 76 3807
[24] Tomás A P, Fontserè A, Llobet J, Placidi M, Rennesson S, Baron N, Chenot S, Moreno J C, Cordier Y 2013 J. Appl. Phys. 113 174501
[25] Piotrowska A B, Kamińska E A, Wojtasiak W, Gwarek W, Kucharski R, Zajc M, Prystawko P, Kruszewski P, Ekielski M, Kaczmarski J, Kozubal M, Trajnerowicz A, Taube A 2016 ECS Trans. 75 77
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