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薄膜异质结中磁性斯格明子的相关研究

李文静 光耀 于国强 万蔡华 丰家峰 韩秀峰

薄膜异质结中磁性斯格明子的相关研究

李文静, 光耀, 于国强, 万蔡华, 丰家峰, 韩秀峰
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  • 磁性斯格明子由于具有拓扑保护、尺寸小、驱动电流密度低等优异的属性,有望作为未来超高密度磁存储和逻辑功能器件的信息载体.为了满足器件中信息写入和读取的基本要求,需要在室温下实现斯格明子的精确产生、操控和探测.该综述简要介绍最近我们针对上述问题取得的一系列研究进展,包括:1)证明可以通过控制磁性薄膜材料的垂直磁各向异性在室温下产生斯格明子,并进一步在基于反铁磁的薄膜异质结中发现了室温、零磁场下稳定存在的斯格明子;2)证明能够利用电流产生的自旋轨道力矩操控斯格明子,并进一步制备出一种基于斯格明子的原理型器件,实现了利用电学方式产生和操控数量可控的斯格明子.
      通信作者: 于国强, guoqiangyu@iphy.ac.cn
    • 基金项目: 国家自然科学基金委员会与爱尔兰科学基金会合作研究项目(批准号:51861135104)、国家千人计划青年项目、科技部国家重点研发计划(纳米计划)(批准号:2017YFA0206200)、国家自然科学基金(批准号:11434014,51620105004,11174341,51701203)、中国科学院战略先导项目(B类)(批准号:XDB07030200)、中国科学院前沿科学重点研究计划(批准号:QYZDJ-SSW-SLH016)和中国科学院国际合作局对外合作重点项目(批准号:112111KYSB20170090)资助的课题.
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    Wang C, Du H, Zhao X, Jin C, Tian M, Zhang Y, Che R 2017 Nano Lett. 17 2921

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    Yu G, Upadhyaya P, Wong K L, Jiang W, Alzate J G, Tang J, Amiri P K, Wang K L 2014 Phys. Rev. B 89 104421

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    Ma X, Yu G, Li X, Wang T, Wu D, Olsson K S, Chu Z, An K, Xiao J Q, Wang K L, Li X 2016 Phys. Rev. B 94 180408

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  • 收稿日期:  2018-03-27
  • 修回日期:  2018-05-14
  • 刊出日期:  2018-07-05

薄膜异质结中磁性斯格明子的相关研究

  • 1. 中国科学院物理研究所, 北京凝聚态物理国家研究中心, 北京 100190
  • 通信作者: 于国强, guoqiangyu@iphy.ac.cn
    基金项目: 

    国家自然科学基金委员会与爱尔兰科学基金会合作研究项目(批准号:51861135104)、国家千人计划青年项目、科技部国家重点研发计划(纳米计划)(批准号:2017YFA0206200)、国家自然科学基金(批准号:11434014,51620105004,11174341,51701203)、中国科学院战略先导项目(B类)(批准号:XDB07030200)、中国科学院前沿科学重点研究计划(批准号:QYZDJ-SSW-SLH016)和中国科学院国际合作局对外合作重点项目(批准号:112111KYSB20170090)资助的课题.

摘要: 磁性斯格明子由于具有拓扑保护、尺寸小、驱动电流密度低等优异的属性,有望作为未来超高密度磁存储和逻辑功能器件的信息载体.为了满足器件中信息写入和读取的基本要求,需要在室温下实现斯格明子的精确产生、操控和探测.该综述简要介绍最近我们针对上述问题取得的一系列研究进展,包括:1)证明可以通过控制磁性薄膜材料的垂直磁各向异性在室温下产生斯格明子,并进一步在基于反铁磁的薄膜异质结中发现了室温、零磁场下稳定存在的斯格明子;2)证明能够利用电流产生的自旋轨道力矩操控斯格明子,并进一步制备出一种基于斯格明子的原理型器件,实现了利用电学方式产生和操控数量可控的斯格明子.

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