In this paper, a new kind of multiple islands single-electron transistor is prepared successfully with indium quantum dots deposited among nanometer-gap electrodes. The output characteristics are tested and the Coulomb blockade effects are observed. As a result, the harmful co-tunneling effects occurring usually in the single island single-electron transistors are weakened significantly, and a big threshold voltage is got. At the end of the paper, the different transport states from source to drain are discussed.