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微波等离子体化学气相沉积合成掺氮金刚石薄膜的缺陷和结构特征及其生长行为

E. Bauer-Grosse 张庆瑜 刘燕燕

微波等离子体化学气相沉积合成掺氮金刚石薄膜的缺陷和结构特征及其生长行为

E. Bauer-Grosse, 张庆瑜, 刘燕燕
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  • 被引次数: 0
出版历程
  • 收稿日期:  2006-06-14
  • 修回日期:  2006-10-27
  • 刊出日期:  2007-02-05

微波等离子体化学气相沉积合成掺氮金刚石薄膜的缺陷和结构特征及其生长行为

  • 1. (1)Laboratoire de Science et Génie des Surfaces,Ecole des Mines,Nancy 54042,France; (2)大连理工大学三束材料改性国家重点实验室,大连 116024; (3)大连理工大学三束材料改性国家重点实验室,大连 116024;Laboratoire de Science et Génie des Surfaces,Ecole des Mines,Nancy 54042,France
    基金项目: 

    中法先进研究计划(批准号:MX01-02)和法国国际科学合作计划资助的课题.

摘要: Diamond film was deposited in CH4 and H2 gas mixture with a small amount of N2 by microwave plasma assisted chemical vapor deposition (MPCVD). Scanning electron microscopy, Raman spectroscopy and transmission electron microscopy were applied to characterize the film. The results showed that the growth of grains are different the central region and the edge. In the central region, diamond grains nucleated with a density as high as 4.8×108 cm-2 and were preferential in 〈001〉 orientation. The inner grains formed an area without stacking faults,which was surrounded by a rim with a high density of stacking faults. A growth model was suggested to interpret the morphological feature and the behavior of preferential growth. At the edge, the grains were identified to be 6H polytypes of diamond and a new twin relationship of grains was found. Besides, the effect of the N dopant on the growth behavior of the diamond film deposited by MPCVD was discussed in connection with the growth rate of the film.

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