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中国物理学会期刊

沉积速率和生长停顿对InAs/GaAs量子点超晶格生长影响的综合分析

CSTR: 32037.14.aps.57.2399

Influences of flux and interruption on InAs/GaAs quantum dot superlattice growth

CSTR: 32037.14.aps.57.2399
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  • 采用动力学蒙特卡罗模型模拟了沉积速率和生长停顿对GaAs衬底中垂直耦合InAs 量子点超晶格生长早期阶段的影响.通过对生长表面形态、岛平均尺寸、岛尺寸分布及其标准差等方面的研究,发现综合控制沉积速率和生长停顿时间能够得到大小均匀、排列有序的岛阵列.这对后续量子点超晶格生长过程中量子点的定位有重要影响.

     

    Kinetic Monte Carlo simulations are applied to study the growth of self-assembled vertical ordering InAs quantum dot superlattice on GaAs substrate. The study is focused on the influences of flux and interruption time at the initial stage when the first sub-monolayer is forming on the wetting layer. We demonstrate that uniform sized and regularly ordered island arrays can be obtained by controlling flux and interruption time, by means of studying the surface morphology, average island size, island size distribution and the standard deviation of island size distribution comprehensively. The size and order of island arrays will greatly affect the location and size of quantum dots in subsequent three-dimensional growth.

     

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