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物理学报. 2008, 57(5): 3188-3192.
doi: 10.7498/aps.57.3188.
铁磁性锰氧化物掺杂的ZnO压敏电阻性能研究
- 收稿日期: 2007-09-25
- 修回日期: 2007-10-16
- 刊出日期: 2008-05-28
English Abstract
The study of ZnO varistor doped with ferromagnetic manganese oxide
- Received Date:
25 September 2007
- Accepted Date:
16 October 2007
- Published Online:
28 May 2008
Abstract: ZnO varistor doped with ferromagnetic manganese oxide (La07Sr03MnO3) was prepared by conventional electric ceramic technique. There are secondary phases, La07Sr03MnO3 and LaMnO3, existing at the grain boundaries. The content of insulating phase of LaMnO3 obviously affects the electrical properties of the samples. The samples still remained ferromagnetism after doping. Applied magnetic filed could change the electrical property. The resistance increased when magnetic field was applied, showing a positive magnetoresistance (PMR) phenomenon. The existence of PMR is due to the broadening of barrier at the grain boundaries caused by the magnetic field.
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Keywords:
- ZnO /
- varistor /
- manganese oxide /
- positive magnetoresistance
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