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物理学报. 2009, 58(1): 471-476.
doi: 10.7498/aps.58.471.
GaSb/GaAs复合应力缓冲层上自组装InAs量子点的生长
- 收稿日期: 2008-05-21
- 修回日期: 2008-07-05
- 刊出日期: 2009-01-20
摘要: 研究了GaSb/GaAs复合应力缓冲层上自组装生长的InAs量子点.在2ML GaSb/1ML GaAs复合应力缓冲层上获得了高密度的、沿［100］方向择优分布量子点.随着复合应力缓冲层中GaAs层厚度的不同，量子点的密度可以在1.2×1010cm-2和8×1010cm-2进行调控.适当增加GaAs层的厚度至5ML，量子点的发光波长红移了约25nm，室温下PL光谱波长接近1300nm.
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关键词:
- 自组装量子点 /
- 分子束外延 /
- Ⅲ-Ⅴ族化合物半导体
English Abstract
Effect of the GaAs/GaSb combination strain-buffer layer on self-assembled InAs quantum dots
- Received Date:
21 May 2008
- Accepted Date:
05 July 2008
- Published Online:
20 January 2009
Abstract: Optical properties and surface structures of InAs/GaAs serf-assembled QDs grown on 2ML GaSb and x-ML GaAs combined strain-buffer layer are investigated systematically by photoluminescence (PL) and atomic force microscopy (AFM). The QD density varies from 1.2×10cm-2 to 8.0×10cm-2 due to the influence of the lattice mismatch. The combined layer favors the increasing of In incorporated into dots and the average height-to-width ratio，which resulted in the red-shift of the emission peaks.For the sample of 5ML GaAs thin film the ground state transition is shifted to nearly 1300nm at room temperature.
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