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基于RLCπ型等效模型的互连网络精确焦耳热功耗计算

朱樟明 钟波 杨银堂

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基于RLCπ型等效模型的互连网络精确焦耳热功耗计算

朱樟明, 钟波, 杨银堂

An accurate Joule heat model of RLC interconnect based on π equivalent circuit

Zhu Zhang-Ming, Zhong Bo, Yang Yin-Tang
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  • 基于互连网络的RLC π型等效模型,考虑电感的屏蔽作用和非理想的阶跃激励,提出了互连线网络在斜阶跃激励下的焦耳热功耗计算方法,极大地简化了互连网络中电流和功耗的表达式. 基于90 nm金属氧化物半导体(CMOS)工艺的互连参数对所提出的计算方法进行了计算和仿真验证,对于上升信号小于1 ns的情况,计算结果与Hspice仿真结果的误差小于3%,具有很高的精度,适合应用于大规模互连网络中的功耗估算和热分析.
    With the integrated circuits processing stepping into nanometer scale, the interconnect Joule heat becomes significantly large. Based on the RLC π equivalent circuit, this paper proposes a novel accurate model to evaluate Joule heat power of interconnected line in VLSI. The shielding effect of the inductor and the non-ideal step stimulation are considered in the proposed model. The power consumption of a typical interconnected topology in 90 nm complementary metal-oxide semiconductor process is computed. The error between results of this proposed method and Hspice simulation is within 3% when the input signal’s delay time is within 1 ns. The proposed model can be used to estimate Joule heat consumption where rough heat control is needed, such as route structure in the network on chip.
    • 基金项目: 国家自然科学基金(批准号:60725415,60971064)、国家高技术研究发展计划(批准号:2009AA01Z258,2009AA01Z260)和西安AM创新基金(批准号:XA-AM-200907)资助的课题.
    [1]

    Zhu Z M, Qian L B 2009 Chin. Phys. B 18 1188

    [2]

    International Technology Roadmap for Semiconductors 2006 Edition http:/public.itrs.net

    [3]

    Zhu Z M, Zhong B, Hao B T, Yang Y T 2009 Acta Phys. Sin. 58 7124 (in Chinese) [朱樟明、 钟 波、 郝报田、 杨银堂 2009 物理学报 58 7124]

    [4]

    El-Moursy M A, Friedman E G 2005 IEEE Trans. VLSI Syst. 13 396

    [5]

    Chen G Q, Friedman E G 2008 IEEE Circuits-Ⅱ 55 26

    [6]

    Zhou Q M, Mohanram K 2006 ACM IEEE Design Automation Conference Proceedings of the 43rd Conference on Design automation San Diego, California, June 4—8, 2006 p965

    [7]

    Yang X, Cheng C K, Ku W H 2000 IEEE/ACM International Conference Computer-Aided Design Austin, Texas, September 17—20, 2000 222

    [8]

    Ren Y L, Mao J F, Li X C 2005 Microelectron. 35 290 ( in Chinese) [任英磊、 毛军发、 李晓春 2005 微电子学 35 290 ]

  • [1]

    Zhu Z M, Qian L B 2009 Chin. Phys. B 18 1188

    [2]

    International Technology Roadmap for Semiconductors 2006 Edition http:/public.itrs.net

    [3]

    Zhu Z M, Zhong B, Hao B T, Yang Y T 2009 Acta Phys. Sin. 58 7124 (in Chinese) [朱樟明、 钟 波、 郝报田、 杨银堂 2009 物理学报 58 7124]

    [4]

    El-Moursy M A, Friedman E G 2005 IEEE Trans. VLSI Syst. 13 396

    [5]

    Chen G Q, Friedman E G 2008 IEEE Circuits-Ⅱ 55 26

    [6]

    Zhou Q M, Mohanram K 2006 ACM IEEE Design Automation Conference Proceedings of the 43rd Conference on Design automation San Diego, California, June 4—8, 2006 p965

    [7]

    Yang X, Cheng C K, Ku W H 2000 IEEE/ACM International Conference Computer-Aided Design Austin, Texas, September 17—20, 2000 222

    [8]

    Ren Y L, Mao J F, Li X C 2005 Microelectron. 35 290 ( in Chinese) [任英磊、 毛军发、 李晓春 2005 微电子学 35 290 ]

计量
  • 文章访问数:  6931
  • PDF下载量:  755
  • 被引次数: 0
出版历程
  • 收稿日期:  2009-06-16
  • 修回日期:  2009-11-03
  • 刊出日期:  2010-07-15

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