-
室温下采用射频磁控溅射法,在硅衬底上制备了Y2O3-TiO2氧化物复合薄膜.利用XRD(X-ray diffraction)和AFM( atomic force microscopy)分析观察了退火前后样品的物相、形貌等变化,讨论了致密薄膜的生长机理.实验发现,溅射功率越大,薄膜的平整度和致密度越好.对热处理前后样品的结晶结构和表面形貌的分析结果显示,在本实验参数范围内,随着溅射功率的增大,更多的Y2O3
-
关键词:
- Y2O3-TiO2薄膜 /
- 表面形貌 /
- 原子力显微镜 /
- 磁控溅射
[1] Mikhelashvili V, Eisenstein G 2001 Microelectronics Reliability 41 1057
[2] Suhail M H, Mohan Rao G, Mohan 1992 J. Appl. Phys. 71 1421
[3] Hu Z G, Li W W, Wu J D, Sun J, Shu Q W, Zhong X X, Zhu Z Q, Chu J H 2008 Appl. Phys. Lett. 93 181910-1
[4] Zhang M, Lin G Q, Dong C, Wen L S 2007 Acta Phys. Sin. 56 7300 (in Chinese)[张敏、林国强、董 闯、闻立时 2007 物理学报 56 7300]
[5] Gassim G, Alkhateeb N, Hussein H 2007 Desalination 209 342
[6] Meulen T, Mattson A, Osterlund L 2007 Journal of Catalysis 251 131
[7] Wang H, Wu Y, Xu B Q 2005 Applied Catalysis B: Environmental 59 139
[8] Weinberger B R, Garber R B 1994 Appl. Phys. Lett. 66 2409
[9] Wang S F, Hsu Y F, Lee Y S 2006 Ceramics International 32 121
[10] Okimura K, Maeda N, Shibata A 1996 Thin Solid Films 281 427
[11] Tang H, Parasad K, Sanjines R, Schmid P E, Levy F 1994 J. Appl. Phys. 75 2042
[12] Albertin K F, Pereyra I 2009 Thin Solid Films 517 4548
[13] Kadoshima M, Hiratani M, Shimamoto Y, Torii K, Miki H, Kimura S, Nabatame T 2003 Thin Solid Films 424 224
[14] Song G B, Liu F S, Peng T J, Liang J K, Rao G H 2002 Acta Phys. Sin. 51 2793 (in Chinese)[宋功保、刘福生、彭同江、梁敬魁、饶光辉 2002 物理学报 51 2793]
[15] Tang J Y 2001 Acta Phys. Sin. 50 2198 (in Chinese) [唐俊勇 2001 物理学报 50 2198]
[16] Cui Y F, Yuan Z H 2005 Acta Phys. Sin. 55 5172 (in Chinese) [崔永峰、袁志好 2005 物理学报 55 5172]
[17] Wang S F, Hsu Y F, Lee R L, Lee Y S 2004 Applied Surface Science 229 140
[18] Granta C D, Schwartzberga A M, Smestadb G P, Kowalik J, Tolbert L M, Zhang J Z 2003 Synthetic Metals 132 197
[19] Smestada G P, Spiekermannb S, Kowalik J, Granta C D, Schwartzberga A M, Zhang J, Tolbert L M, Moons E 2003 Solar Energy Materials & Solar Cells 76 85
[20] Saito Y, Kitamura T, Wada Y J, Yanagida S 2002 Synthetic Metals 131 185
[21] Li B, Wang L D, Zhang D Q, Qiu Y 2003 Chinese Science Bulletin 48 22 (in Chinese) [李 斌、王立铎、张德强、邱 勇 2003 科学通报 48 22]
[22] Zhang W J, Zhu S L, Li Y, Wang F H, He H B 2009 Plating & Finishing 31 3 (in Chinese)[张文杰、朱圣龙、李 瑛、王福会、何红波 2009 电镀与精饰 31 3]
[23] Raghavan D, Gu X, Nguyen T, VanLandingham M, Karim A 2000 Macromelecules 33 2573
[24] Zhu C F, Wang C 2007 Scanning probe microscopy application progress(Binjing: chemical industry press)p5 (in Chinese) [朱传风、王琛著 2007扫描探针显微术应用进展(北京:化学工业出版社)第5页]
[25] Zhang W J, Wang K L, Zhu S L, Li Y, Wang F H, He H B 2009 Chemicsl Engineering Journal 155 83
[26] Huo H B, Liu Z T, Yan F, 2008 Materials Review 22 123 (in Chinese) [霍会宾、刘正堂、阎 锋2008材料导报22 123]
[1] Mikhelashvili V, Eisenstein G 2001 Microelectronics Reliability 41 1057
[2] Suhail M H, Mohan Rao G, Mohan 1992 J. Appl. Phys. 71 1421
[3] Hu Z G, Li W W, Wu J D, Sun J, Shu Q W, Zhong X X, Zhu Z Q, Chu J H 2008 Appl. Phys. Lett. 93 181910-1
[4] Zhang M, Lin G Q, Dong C, Wen L S 2007 Acta Phys. Sin. 56 7300 (in Chinese)[张敏、林国强、董 闯、闻立时 2007 物理学报 56 7300]
[5] Gassim G, Alkhateeb N, Hussein H 2007 Desalination 209 342
[6] Meulen T, Mattson A, Osterlund L 2007 Journal of Catalysis 251 131
[7] Wang H, Wu Y, Xu B Q 2005 Applied Catalysis B: Environmental 59 139
[8] Weinberger B R, Garber R B 1994 Appl. Phys. Lett. 66 2409
[9] Wang S F, Hsu Y F, Lee Y S 2006 Ceramics International 32 121
[10] Okimura K, Maeda N, Shibata A 1996 Thin Solid Films 281 427
[11] Tang H, Parasad K, Sanjines R, Schmid P E, Levy F 1994 J. Appl. Phys. 75 2042
[12] Albertin K F, Pereyra I 2009 Thin Solid Films 517 4548
[13] Kadoshima M, Hiratani M, Shimamoto Y, Torii K, Miki H, Kimura S, Nabatame T 2003 Thin Solid Films 424 224
[14] Song G B, Liu F S, Peng T J, Liang J K, Rao G H 2002 Acta Phys. Sin. 51 2793 (in Chinese)[宋功保、刘福生、彭同江、梁敬魁、饶光辉 2002 物理学报 51 2793]
[15] Tang J Y 2001 Acta Phys. Sin. 50 2198 (in Chinese) [唐俊勇 2001 物理学报 50 2198]
[16] Cui Y F, Yuan Z H 2005 Acta Phys. Sin. 55 5172 (in Chinese) [崔永峰、袁志好 2005 物理学报 55 5172]
[17] Wang S F, Hsu Y F, Lee R L, Lee Y S 2004 Applied Surface Science 229 140
[18] Granta C D, Schwartzberga A M, Smestadb G P, Kowalik J, Tolbert L M, Zhang J Z 2003 Synthetic Metals 132 197
[19] Smestada G P, Spiekermannb S, Kowalik J, Granta C D, Schwartzberga A M, Zhang J, Tolbert L M, Moons E 2003 Solar Energy Materials & Solar Cells 76 85
[20] Saito Y, Kitamura T, Wada Y J, Yanagida S 2002 Synthetic Metals 131 185
[21] Li B, Wang L D, Zhang D Q, Qiu Y 2003 Chinese Science Bulletin 48 22 (in Chinese) [李 斌、王立铎、张德强、邱 勇 2003 科学通报 48 22]
[22] Zhang W J, Zhu S L, Li Y, Wang F H, He H B 2009 Plating & Finishing 31 3 (in Chinese)[张文杰、朱圣龙、李 瑛、王福会、何红波 2009 电镀与精饰 31 3]
[23] Raghavan D, Gu X, Nguyen T, VanLandingham M, Karim A 2000 Macromelecules 33 2573
[24] Zhu C F, Wang C 2007 Scanning probe microscopy application progress(Binjing: chemical industry press)p5 (in Chinese) [朱传风、王琛著 2007扫描探针显微术应用进展(北京:化学工业出版社)第5页]
[25] Zhang W J, Wang K L, Zhu S L, Li Y, Wang F H, He H B 2009 Chemicsl Engineering Journal 155 83
[26] Huo H B, Liu Z T, Yan F, 2008 Materials Review 22 123 (in Chinese) [霍会宾、刘正堂、阎 锋2008材料导报22 123]
引用本文: 
Citation:
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物理学报. 2011, 60(3): 037702.
doi: 10.7498/aps.60.037702.
磁控溅射制备Y2O3-TiO2薄膜形貌的研究
- 收稿日期: 2010-05-03
- 修回日期: 2010-06-11
- 刊出日期: 2011-03-15
摘要: 室温下采用射频磁控溅射法,在硅衬底上制备了Y2O3-TiO2氧化物复合薄膜.利用XRD(X-ray diffraction)和AFM( atomic force microscopy)分析观察了退火前后样品的物相、形貌等变化,讨论了致密薄膜的生长机理.实验发现,溅射功率越大,薄膜的平整度和致密度越好.对热处理前后样品的结晶结构和表面形貌的分析结果显示,在本实验参数范围内,随着溅射功率的增大,更多的Y2O3
-
关键词:
- Y2O3-TiO2薄膜 /
- 表面形貌 /
- 原子力显微镜 /
- 磁控溅射
English Abstract
Analysis of Y2O3 doped TiO2 films topography prepared by radio frequency magnetron sputtering
- Received Date:
03 May 2010
- Accepted Date:
11 June 2010
- Published Online:
15 March 2011
Abstract: Y2O3-TiO2 composite film were deposited on Si substrate at room temperature by means of radio frequency magnetron sputtering. The crystalline state and topography of the film before and after annealing were measured by XRD and AFM, and the mechanism of the film being more compact was discussed. The result revealed that the evenness and compactness of the film can be improved with increasing the sputtering power, which is due to the fact of more Y2O3 filling the pores around TiO2with raising sputtering power, which inhibited the growth of big TiO\-2 grains and improved the evenness and compactness of film. After annealing, XRD pattern indicated that the addition of Y2O3 favors the formation of rutile TiO2 film which has high-dielectric constant.
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