搜索

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

石墨点阵柱状光子晶体共振腔的温度特性

李岩 傅海威 邵敏 李晓莉

引用本文:
Citation:

石墨点阵柱状光子晶体共振腔的温度特性

李岩, 傅海威, 邵敏, 李晓莉

Temperature characteristic of photonic crystals resonant cavitycomposed of GaAs pillars with graphite lattice

Li Yan, Fu Hai-Wei, Shao Min, Li Xiao-Li
PDF
导出引用
  • 构造了一种二维GaAs石墨点阵柱状光子晶体共振腔. 利用时域有限差分方法计算了这种光子晶体共振腔TEy模的共振峰随温度变化的情况. 计算结果表明这种结构的光子晶体共振腔的共振峰主峰随温度呈分段线性变化趋势,且具有1.60 nm/℃以上的温度响应灵敏度. 同时,计算结果显示,这种结构的光子晶体共振腔具有很好的频率开关特性. 最后,利用计算结果解释了频率开关特性的成因.
    A model of two-dimensional photonic band gap structure resonant cavity composed of GaAs pillars with graphite lattice is proposed. The variation of its TEy mode formant wavelength with temperature is calculated by finite difference time domain method. The results show that there is a sectional linear characteristic between the main formant wavelength and temperature for this kind of photonic crystal resonant cavity, and the sensitivity responding to temperature is more than 1.60nm/℃. At the same time, the results show that this kind of resonant cavity possesses an excellent characterisitc of frequency switching. Finally, the cause for its switching characteristic is explained by the calculated results.
    • 基金项目: 陕西省自然科学基础研究计划项目(批准号:2010JM8006)资助和课题.
    [1]

    Joannopoulos J D, Villeneuve P R, Fan S H 1997 Nature 386 143

    [2]

    Prather D W, Shi S Y, Murakowski J, Schneider G J, Sharkawy A, Chen C H, Miao B L 2006 IEEE J. Sel. Top. Quant. 12 6

    [3]

    Martínez A, Piqueras M A, Martí J 2006 Appl. Phys. Lett. 89 131111

    [4]

    Boutayeb H, Denidni T A, Sebak A R, Talbi L 2005 IEEE Antennas and Wireless Propagation Letters 4 93

    [5]

    Niemi T, Frandsen L H, Hede K K, Harpth A, Borel P I, Kristensen M 2006 IEEE Photonics Tech. Lett. 18 226

    [6]

    Ni P G 2010 Acta Phys. Sin. 59 340 (in Chinese)[倪培根 2010 物理学报 59 340]

    [7]

    Lu Zh L, Murakowski J A, Schuetz C A, Shi S Y, Schneider G J, Prather D W 2005 Phys. Rev. Lett. 95 153901

    [8]

    Lee Ch K, Thillaigovindan J, Chen Ch Ch, Chen X T, Chao Y T, Tao Sh H, Xiang W F, Yu A B, Feng H H, Lo G Q 2008 Appl. Phys. Lett. 93 113113

    [9]

    Sünner T, Stichel T, Kwon S H, Schlereth T W, Hfling S, Kamp M, Forchel A 2008 Appl. Phys. Lett. 92 261112

    [10]

    Cui Y L, Hou L T 2010 Acta Phys. Sin. 59 2571 (in China)[崔艳玲、侯蓝田 2010 物理学报 59 2571]

    [11]

    Liu Q N 2010 Acta Phys. Sin. 59 2551 (in Chinese)[刘启能 2010 物理学报 59 2551]

    [12]

    Della Corte F G, Cocorullo G, Iodice M, Rendina I 2000 Appl. Phys. Lett. 77 1614

    [13]

    Zheng H X, Ge D B, Wei B 2003 Systems Engineering and Electronics 25 4(in Chinese)[郑宏兴、葛德彪、魏 兵 2003 系统工程与电子技术 25 4]

    [14]

    Chen M X 2007 Elasticity and Plasticity (Beijing: Science Press Book)(in Chinese)[陈明祥 2007弹塑性力学(北京:科学出版社)]

    [15]

    Liu N K, Zhu B Sh, Luo J Sh 1994 Semiconductor Physics (Beijing: National Defence Industry Press Book) (in Chinese)[刘恩科、朱秉升、罗晋生 1994 半导体物理学(北京:国防工业出版社)]

    [16]

    Chen G, Liao J L, Hao W 2007 Foundation of Crystals Physics (Second Edition) (Beijing: Science Press Book) (in Chinese)[陈 纲、廖理几、郝 伟 2007 晶体物理学基础(第二版)(北京:科学出版社)]

    [17]

    NYE J F 1960 Physical Properties of Crystals (Oxford: Oxford University Press Book)

  • [1]

    Joannopoulos J D, Villeneuve P R, Fan S H 1997 Nature 386 143

    [2]

    Prather D W, Shi S Y, Murakowski J, Schneider G J, Sharkawy A, Chen C H, Miao B L 2006 IEEE J. Sel. Top. Quant. 12 6

    [3]

    Martínez A, Piqueras M A, Martí J 2006 Appl. Phys. Lett. 89 131111

    [4]

    Boutayeb H, Denidni T A, Sebak A R, Talbi L 2005 IEEE Antennas and Wireless Propagation Letters 4 93

    [5]

    Niemi T, Frandsen L H, Hede K K, Harpth A, Borel P I, Kristensen M 2006 IEEE Photonics Tech. Lett. 18 226

    [6]

    Ni P G 2010 Acta Phys. Sin. 59 340 (in Chinese)[倪培根 2010 物理学报 59 340]

    [7]

    Lu Zh L, Murakowski J A, Schuetz C A, Shi S Y, Schneider G J, Prather D W 2005 Phys. Rev. Lett. 95 153901

    [8]

    Lee Ch K, Thillaigovindan J, Chen Ch Ch, Chen X T, Chao Y T, Tao Sh H, Xiang W F, Yu A B, Feng H H, Lo G Q 2008 Appl. Phys. Lett. 93 113113

    [9]

    Sünner T, Stichel T, Kwon S H, Schlereth T W, Hfling S, Kamp M, Forchel A 2008 Appl. Phys. Lett. 92 261112

    [10]

    Cui Y L, Hou L T 2010 Acta Phys. Sin. 59 2571 (in China)[崔艳玲、侯蓝田 2010 物理学报 59 2571]

    [11]

    Liu Q N 2010 Acta Phys. Sin. 59 2551 (in Chinese)[刘启能 2010 物理学报 59 2551]

    [12]

    Della Corte F G, Cocorullo G, Iodice M, Rendina I 2000 Appl. Phys. Lett. 77 1614

    [13]

    Zheng H X, Ge D B, Wei B 2003 Systems Engineering and Electronics 25 4(in Chinese)[郑宏兴、葛德彪、魏 兵 2003 系统工程与电子技术 25 4]

    [14]

    Chen M X 2007 Elasticity and Plasticity (Beijing: Science Press Book)(in Chinese)[陈明祥 2007弹塑性力学(北京:科学出版社)]

    [15]

    Liu N K, Zhu B Sh, Luo J Sh 1994 Semiconductor Physics (Beijing: National Defence Industry Press Book) (in Chinese)[刘恩科、朱秉升、罗晋生 1994 半导体物理学(北京:国防工业出版社)]

    [16]

    Chen G, Liao J L, Hao W 2007 Foundation of Crystals Physics (Second Edition) (Beijing: Science Press Book) (in Chinese)[陈 纲、廖理几、郝 伟 2007 晶体物理学基础(第二版)(北京:科学出版社)]

    [17]

    NYE J F 1960 Physical Properties of Crystals (Oxford: Oxford University Press Book)

计量
  • 文章访问数:  7682
  • PDF下载量:  572
  • 被引次数: 0
出版历程
  • 收稿日期:  2010-08-13
  • 修回日期:  2010-09-12
  • 刊出日期:  2011-07-15

/

返回文章
返回